SSF18NS60F Main Product Characteristics: VDSS 610V RDS(on) 0.27ohm(typ.) ID 15A ① TO220F Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF18NS60F series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 15 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.4 ① IDM Pulsed Drain Current ② Units A 60 Power Dissipation ③ 32.8 W Linear Derating Factor 0.26 W/°C VDS Drain-Source Voltage 610 V VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 180 mJ IAS Avalanche Current @ L=22.5mH 4 A -55 to + 150 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2012.4.1 www.silikron.com Version : 1.0 page 1 of 8 SSF18NS60F Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 3.8 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 80 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Typ. Max. Units V Conditions 610 — — — 0.27 0.35 — 0.73 — 2 — 4 — 2.66 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 27.0 — Qgs Gate-to-Source charge — 6.3 — Qgd Gate-to-Drain("Miller") charge — 13.7 — VGS = 10V td(on) Turn-on delay time — 12.3 — VGS=10V, VDS =480V, tr Rise time — 24.3 — td(off) Turn-Off delay time — 27.1 — tf Fall time — 19.7 — ID =12A Ciss Input capacitance — 949 — VGS = 0V Coss Output capacitance — 783 — Crss Reverse transfer capacitance — 11 — Ω V μA nA VGS = 0V, ID = 250μA VGS=10V,ID = 9.4A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 10A, nC nS pF VDS=480V, RL=40Ω, RGEN=4.1Ω VDS = 25V ƒ = 400KHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 15 ① A — — 60 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.89 1.3 V IS=15A, VGS=0V trr Reverse Recovery Time — 313 — nS TJ = 25°C, IF =15A, di/dt = Qrr Reverse Recovery Charge — 3 — μC 100A/μs ©Silikron Semiconductor CO.,LTD. 2012.4.1 www.silikron.com Version : 1.0 page 2 of 8 SSF18NS60F Test circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ©Silikron Semiconductor CO.,LTD. 2012.4.1 www.silikron.com Version : 1.0 page 3 of 8 SSF18NS60F Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature ©Silikron Semiconductor CO.,LTD. Figure 4: Normalized On-Resistance Vs. Case Temperature 2012.4.1 www.silikron.com Version : 1.0 page 4 of 8 SSF18NS60F Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Case Temperature ©Silikron Semiconductor CO.,LTD. 2012.4.1 www.silikron.com Version : 1.0 page 5 of 8 SSF18NS60F Mechanical Data: TO220F PACKAGE OUTLINE DIMENSION Symbol E A A1 A2 A4 A5 c c1 D Q H1 e ФP L L1 D1 ФP1 ФP2 ФP3 ϴ1 ϴ2 DEP F1 F2 F3 F4 G1 G2 G3 E1 K1 b1 b2 Dimension In Millimeters Nom Max 10.200 10.360 4.700 4.900 2.540 2.740 1.050 1.150 2.750 2.850 1.00REF 0.420 0.500 0.580 0.420 0.500 0.580 15.670 15.870 16.070 9.20REF 6.70REF 2.54BSC 3.183REF 12.780 12.980 13.180 3.250 3.450 3.650 9.17REF 1.400 1.500 1.600 1.150 1.200 1.250 3.45REF Min 10.040 4.500 2.340 0.950 2.650 5o 0.050 1.900 13.800 3.200 5.300 6.600 6.900 1.100 9.900 0.650 1.050 0.700 ©Silikron Semiconductor CO.,LTD. 7o 45o 0.100 2.000 13.900 3.300 5.400 6.700 7.000 1.300 10.000 0.700 1.200 0.800 9o 0.150 2.100 14.000 3.400 5.500 6.800 7.100 1.500 10.100 0.750 1.350 0.850 2012.4.1 www.silikron.com Min 0.395 0.177 0.092 0.037 0.104 0.017 0.017 0.617 0.503 0.128 0.055 0.045 5o 0.002 0.075 0.543 0.126 0.209 0.260 0.272 0.043 0.390 0.026 0.041 0.028 Dimension In Inches Nom 0.402 0.185 0.100 0.041 0.108 0.039REF 0.020 0.020 0.625 0.362REF 0.264REF 0.10BSC 0.125REF 0.511 0.136 0.362REF 0.059 0.047 0.136REF 7o 45o 0.004 0.079 0.547 0.130 0.213 0.264 0.276 0.051 0.394 0.028 0.047 0.031 Version : 1.0 Max 0.408 0.193 0.108 0.045 0.112 0.023 0.023 0.633 0.519 0.144 0.063 0.049 9o 0.006 0.083 0.551 0.134 0.217 0.268 0.280 0.059 0.398 0.030 0.053 0.033 page 6 of 8 SSF18NS60F Ordering and Marking Information Device Marking: SSF18NS60F Package (Available) TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type TO220F Units/ Tube Tubes/Inner Box 50 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner InnerBoxes/ Box CartonBox 1000 6 Duration Sample Size Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃@ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2012.4.1 www.silikron.com Version : 1.0 Units/Carton Box 6000 page 7 of 8 SSF18NS60F ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2012.4.1 www.silikron.com Version : 1.0 page 8 of 8