SSFM8005 Main Product Characteristics:
VDSS
80V
RDS(on)
4.5mohm
ID
180A
TO-220AB
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
180
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
135
IDM
Pulsed Drain Current②
500
ISM
Pulsed Source Current (Body Diode)②
500
PD @TC = 25°C
Power Dissipation③
346
W
PD @TC =100°C
Power Dissipation③
178
W
VDS
Drain-Source Voltage
80
V
VGS
Gate-to-Source Voltage
± 25
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
450
mJ
IAR
Avalanche Current @ L=0.1mH②
95
A
-55 to + 175
°C
TJ TSTG
Operating Junction and
Storage Temperature
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
0.34
℃/W
Junction-to-ambient (t ≤ 10s) ④
12
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
55
℃/W
RθJA
©Silikron Semiconductor CO.,LTD.
2010.12.14
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SSFM8005 Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max
Units
BVDSS
Drain-to-Source breakdown
80
—
—
V
—
4.5
5
mΩ
2
3
4
V
—
—
10
voltage
RDS(on)
Static Drain-to-Source
on-resistance
VGS(th)
IDSS
Gate threshold voltage
Drain-to-Source leakage current
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 20A
VDS = VGS,
ID = 250μA
VDS = 80V,
VGS = 0V
μA
—
Conditions
VDS =80V,
VGS = 0V,
50
TJ = 55°C
IGSS
Gate-to-Source forward leakage
— — 100
Gate-to-Source reverse leakage
-100
— —
nA
37
S
VGS =25V
VGS = -25V
gFS
Forward Transconductance
Qg
Total gate charge
— 96
120
Qgs
Gate-to-Source charge
— 29
36 Qgd
Gate-to-Drain("Miller") charge
— 27
36 Qg(th)
Gate charge at shreshold
—
18
24
Vplateau
gate plateau voltage
—
5.28
6.2
td(on)
Turn-on delay time
— 24.8
— tr
Rise time
— 12.2
— td(off)
Turn-Off delay time
— 88
— tf
Fall time
— 34
— RGEN=2.5Ω
Ciss
Input capacitance
— 6286
— VGS=0V,
Coss
Output capacitance
— 670
— Crss
Reverse transfer capacitance
— 204
— Rg
Gate resistance
—
nC
VGS=10V,
VDS=40V,
ID=20A
V
VGS=10V,
ns
pF
VDS=40V,
RL=15Ω,
VDS=40V,
f=1MHz
—
0.5
VDS=5V, ID=20A
Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Maximum Body-Diode
Min.
Continuous Curren
Typ.
Max
180
Units
Conditions
A
VSD
Diode Forward Voltage
—
0.63
1
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
41
—
ns
IF=20A,
Qrr
Reverse Recovery Charge
—
65
—
nC
dI/dt=100A/μs
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
©Silikron Semiconductor CO.,LTD.
2010.12.14
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SSFM8005 200
180
160
140
120
100
80
60
40
20
0
electrical and thermal characteristics
10V
6.5V
ID,drain to source current(A)
ID,drain current(A)
Typical
6V
7V
5.5V
5V
4.5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
180
VDS=VGS
160
140
120
100
80
60
125℃
40
25℃
20
0
0
5
1
VDS,drain to source voltage(V)
2
3
4
5
6
7
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics Figure 2: Typical Transfer Characteristics 2.2
5
2.1
VGS=10V
2
4.8
VGS=7V
Rdson,Drain-to-Source On
Resistance(Normalized)
Rdson,Drain-to-Source On
Resistance(Normalized)
4.6
4.4
4.2
VGS=10V
1.9
ID=20A
1.8
1.7
1.6
1.5
1.4
VGS=7V
1.3
1.2
ID=20A
1.1
1
0.9
4
0.8
0
5
10
15
20
25
0
30
100
125
150
175
200
Temperature
1.E+02
10
ID=20A
9
8
IS,source to drain current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
75
Figure 4: On-Resistance vs. Junction
Gate Voltage
125℃
7
6
5
25℃
4
1.E+01
125℃
1.E+00
1.E-01
25℃
1.E-02
1.E-03
1.E-04
1.E-05
3
5
6
7
8
9
10
VGS,gate to source voltage(V)
©Silikron Semiconductor CO.,LTD.
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD,source to drain voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
50
Tj,Junction Temperature(°C)
Figure 3: On-Resistance vs. Drain Current and
25
ID,drain current(A)
2010.12.14
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Version : 3.0
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SSFM8005 Typical
9000
10
9
8000
VDS=20V
8
6
5
4
3
6000
Coss=Cds+Cgd
3000
Crss=Cgd
2000
1000
0
20
30
40
50
60
70
80
90
Ciss=Cgd+Cgs, Cds shorted
4000
1
10
VGS=0,F=1MHZ
5000
2
0
Ciss
7000
ID=20A
7
Capacitance (pF)
VGS,gate to source voltage(V)
electrical and thermal characteristics
Coss
Crss
0
100
0
5
1000
Ron
100
limited
DC
10
Tj(max)=175℃
1
Tc=25℃
0.1
0.01
0.1
1
10
VDS,drain to source voltage(V)
20
25
30
35
5000
100uS
1mS
10mS
4000
P ow er ( W)
ID,drain current(A)
10uS
Tj(max)=175℃
3000
Ta=25℃
2000
1000
0
0.00001 0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Operating Area(⑤)
Junction-to-Case (⑤)
200
350
180
ID,drain current(A)
400
300
250
200
150
100
50
160
140
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 11: Power De-rating (③)
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (③)
©Silikron Semiconductor CO.,LTD.
40
8: Capacitance Characteristics
Figure 9: Maximum Forward Biased Safe
Power Dissipation (W)
15
VDS, drain to source voltage(V)
Figure 7: Gate-Charge Characteristics Figure
10
QG,gate charge(nC)
2010.12.14
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175
SSFM8005 Zθ JC,Transient Thermal
Resistance( Normalized
)
Typical electrical and thermal characteristics
10
Duty cycle D= 0.5,0.3,0.1,0.05,0.01,single
1
Duty cycle D=T1/T,
0.1
TJ（max）＝PDM*ZθJC*RθJC+TC
0.01
RθJC=0.34℃/W
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
Zθ JA,Transient Thermal
Resistance( Normalized
)
Figure 13: Normalized Maximum Transient Thermal Impedance (⑤)
1
Duty cycle
0.1
D=0.5,0.3,0.1,
0.05,0.01,single
0.01
Duty cycle D=T1/T,
TJ（max）＝PDM*ZθJA*RθJA+TA
RθJA=55℃/W
0.001
0.01
0.1
1
10
Pulse Width (s)
100
1000
Figure 14: Normalized Maximum Transient Thermal Impedance (⑥)
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2010.12.14
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SSFM8005 Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using
junction-to-case thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured
with the device mounted to a large heatsink, assuming a maximum junction
temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2010.12.14
www.silikron.com Version : 3.0
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SSFM8005 Mechanical Data：
TO220
©Silikron Semiconductor CO.,LTD.
2010.12.14
www.silikron.com Version : 3.0
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