SSFM3008 Main Product Characteristics: VDSS 30V RDS(on) 5.0mohm(typ.) ID 50A SSFM3008 TO252 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Schematic diagram Marking and pin Description: It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 50 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 40 IDM Pulsed Drain Current② 200 Power Dissipation③ 100 W Linear Derating Factor 0.55 W/°C VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.1mH 100 mJ IAS Avalanche Current @ L=0.1mH 44 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C PD @TC = 25°C ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version: 1.0 A page 1 of 8 SSFM3008 Thermal Resistance Symbol Characterizes RθJC RθJA Typ. Max. Units Junction-to-case③ — 1.5 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 45 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 20 ℃/W Electrical Characterizes @TA=25℃ Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) unless otherwise specified Min. Typ. Max. Units Conditions 30 36.5 — V — 5 8 mΩ VGS=10V,ID =20A — 7.5 10 mΩ VGS=4.5V,ID =10A Gate threshold voltage 1 — 3 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 10 μA VDS = 30V,VGS = 0V IGSS Gate-to-Source forward leakage — — 100 -100 — — Qg Total gate charge — 36 — Qgs Gate-to-Source charge — 6.1 — Qgd Gate-to-Drain("Miller") charge — 9.6 — td(on) Turn-on delay time — 10.9 — tr Rise time — 46.5 — td(off) Turn-Off delay time — 27.5 — tf Fall time — 7.1 — Ciss Input capacitance — 1862 — Coss Output capacitance — 360 — Crss Reverse transfer capacitance — 235 — nA VGS = 0V, ID = 250μA VGS =20V VGS = -20V VDS=15V, nC ID=20A, VGS=10V ns VGS=10V, VDS=15V, RGEN=3Ω, ID=20A VGS = 0V pF VDS = 15V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS Parameter Continuous Source Current Min. Typ. Max. Units — — 50 A Conditions MOSFET symbol showing the ISM Pulsed Source Current — — 200 A integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.65 1.3 V IS=1.0A, VGS=0V trr Reverse Recovery Time — 24 — ns TJ = 25°C, IF =20A, di/dt Qrr Reverse Recovery Charge — 26 — nC = 350A/μs ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version:1.0 page 2 of 8 SSFM3008 Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version:1.0 page 3 of 8 SSFM3008 Typical electrical characteristics 100 100 10V 6V ID,drain current(A) ID,drain current(A) 90 7V 80 4.5V 60 4V 40 3.5V 20 VDS=5V 80 70 60 50 40 30 20 125℃ 10 25℃ 0 0 0 1 2 3 4 0 5 0.5 VDS,drain to source voltage(V) 1.5 2 2.5 3 3.5 4 4.5 5 VGS,gate to source voltage(V) Figure 1: Typical Output Characteristics Figure 2: Typical Transfer Characteristics 1.E+02 IS,source to drain current(A) 30 Rdson,Drain-to-Source On Resistance(Normalized) 1 ID=30A 25 20 125℃ 15 10 25℃ 5 0 2 3 4 5 6 7 8 9 10 1.E+01 125℃ 1.E+00 1.E-01 1.E-02 25℃ 1.E-03 1.E-04 1.E-05 0 VGS,gate to source voltage(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VSD,source to drain voltage(V) Figure 4: Body-Diode Characteristics Figure 3: On-Resistance vs. Gate-Source Voltage 3000 9 2500 8 Capacitance (pF) VGS,gate to source voltage(V) 10 7 6 5 VDS=15V 4 ID=20A 3 2 Ciss 2000 VGS=0,F=1MHZ 1500 Ciss=Cgd+Cgs, Cds shorted 1000 Coss=Cds+Cgd Coss Crss=Cgd 500 Crss 1 0 0 0 5 10 15 20 25 30 35 0 5 ©Silikron Semiconductor CO., LTD. 15 20 25 VDS, drain to source voltage(V) QG,gate charge(nC) Figure 5: Gate-Charge Characteristics 10 Figure 6: Capacitance Characteristics 2011.11.05 www.silikron.com Version:1.0 page 4 of 8 SSFM3008 Typical thermal characteristics 200 1000 100 10uS Ron limited Power ( W) ID,drain current(A) 180 100uS 10 DC 1mS 160 Tj(max)=175℃ 140 Ta=25℃ 120 100 60 10mS 1 80 40 Tj(max)=175℃ Tc=25℃ 20 0.1 0.01 0.1 1 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) VDS,drain to source voltage(V) Figure 7: Maximum Forward Biased Safe Figure 8: Single Pulse Power Rating Operating Area Junction-to-Case 60 50 50 ID,drain current(A) Power Dissipation (W) 60 40 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 50 75 TCASE (°C) ZθJC,Transient Thermal Resistance( Normalized ) Figure 9: Power De-rating 10 125 150 175 Figure 10: Current De-rating t Duty cycle D= 0.5,0.3,0.1,0.05,0.01,single tp 1 0.1 100 TCASE (°C) D=tp/t TJ(max)=PDM*ZθJC*RθJC+TC RθJC=2.5℃/W 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) 1 10 100 Figure 11: Normalized Thermal transient Impedance Curve ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version:1.0 page 5 of 8 SSFM3008 Mechanical Data: ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version:1.0 page 6 of 8 SSFM3008 Ordering and Marking Information Device Marking: SSFM3008 Package (Available) TO252 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube TO-252 80 Tubes/Inner Box 50 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner Inner Boxes/Carton Box Box 4000 10 Duration Sample Size Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices TJ=125℃ to 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version:1.0 Units/Carton Box 40000 page 7 of 8 SSFM3008 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.11.05 www.silikron.com Version:1.0 page 8 of 8