SSF3051G7 Main Product Characteristics: D RDS(on) 45mohm(typ.) ID -4A 3051G7 -30V VDSS G S Marking and pin SOT23-6 Assignment Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications Absolute max Rating: Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID -4 A IDM -25 A PD 1.7 W TJ,TSTG -55 To 150 ℃ Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 75 ℃/W Thermal Resistance, Junction-to-Case(Note 2) RθJC 30 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Version : 1.0 page 1 of 9 SSF3051G7 Electrical Characterizes @TA=25℃ Parameter unless otherwise specified Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.6 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4A 45 51 mΩ VGS=-4.5V, ID=-3.4A 65 85 mΩ VDS=-5V,ID=-4A 8.5 S 520 PF 94 PF 73 PF 8.9 nS OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS -1 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,ID=-1A 4.0 nS td(off) VGS=-10V,RGEN=6Ω 22.6 nS 5.5 nS 7.1 nC 0.86 nC 3.9 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-5V,ID=-4A, VGS=-5V DRAIN-SOURCE DIODE CHARACTERISTICS -1.2 V -4 A VSD Diode Forward Current (Note 2) IS Reverse Recovery Time trr Tj=25℃,IF=-4A, 10.3 nS Reverse Recovery Charge Qrr di/dt=-100A/uS 4.3 nC ©Silikron Semiconductor CO.,LTD. VGS=0V,IS=-1.3A -0.8 Diode Forward Voltage (Note 3) 2011.10.25 www.silikron.com Version :1.0 page 2 of 9 SSF3051G7 Test circuits and Waveforms Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Version :1.0 page 3 of 9 SSF3051G7 Typical electrical and thermal characteristics Figure 1: Typical Output Characteristics Figure 3: Drain-Source On-Resistance Figure 2: Transfer Characteristics Figure 4： Drain-Source On-Resistance Figure 5 : Source- Drain Diode Forward ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Figure 6: Rdson vs Vgs Version :1.0 page 4 of 9 SSF3051G7 PD Power(W) ID- Drain Current (A） T J -Junction Temperature(℃) TJ -Junction Temperature(℃) Figure 8： Drain Current Figure 7: Power Dissipation Figure 9： Gate Charge Figure 11: Safe Operation Area ©Silikron Semiconductor CO.,LTD. Figure 10: Capacitance vs Vds Figure 12: 2011.10.25 www.silikron.com Single Pulse Maximum Power Dissipation Version :1.0 page 5 of 9 SSF3051G7 Figure 13: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Version :1.0 page 6 of 9 SSF3051G7 Mechanical Data： SOT23-6 Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Version :1.0 page 7 of 9 SSF3051G7 Ordering and Marking Information Device Marking: 3051G7 Package (Available) SOT23-6 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type SOT23-6 Units/ Tube 3000pcs Tubes/ Inner Box 10pcs Reliability Test Program Test Item Conditions Units/ Inner Box 30000pcs Inner Boxes/ Units/ Carton Box Carton Box 4pcs 120000pcs Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Version :1.0 page 8 of 9 SSF3051G7 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2011.10.25 www.silikron.com Version :1.0 page 9 of 9