SSF6007 Main Product Characteristics: VDSS -50V RDS(on) 2.1ohm(typ.) ID -130mA 6007 SOT-23 Marking and pin Features and Benefits: Schematic diagram Assignment Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ -10V① -130 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V① -100 IDM Pulsed Drain Current② -520 PD @TC = 25°C Power Dissipation③ 230 mW VDS Drain-Source Voltage -50 V VGS Gate-to-Source Voltage ± 20 V ESD ESD Rating (HBM module) 1 KV TJ Operating Junction and Storage Temperature Range -55 to + 150 °C TSTG Units mA Thermal Resistance Symbol RθJA Characterizes Typ. Max. Units Junction-to-ambient (t ≤ 10s) ④ — 556 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 540 ℃/W ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 1 of 6 SSF6007 Electrical Characterizes @TA=25℃ Symbol Parameter V(BR)DSS unless otherwise specified Min. Typ. Drain-to-Source breakdown voltage -50 RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Max. Units — — V VGS = 0V, ID = -10μA — 2.1 7 Ω VGS=-10V,ID = -130mA -0.8 — -2 V VDS = VGS, ID = -1mA — — -0.1 Drain-to-Source leakage current -1 — — -50 — — 10 — — -10 Conditions VDS =-40V,VGS = 0V μA VDS =-50V,VGS = 0V TJ = 125°C uA VGS =20V IGSS Gate-to-Source forward leakage gfs Forward Transconductance 50 — — Ciss Input Capacitance — 45 — Coss Output Capacitance — 18 — Crss Reverse Transfer Capacitance — 11 — f = 1 MHz td(on) Turn–On Delay Time — 3.1 — VDD = –15V; tr Rise Time — 1.3 — td(off) Turn–Off Delay Time — 18 — tf Fall Time — 7.5 — S VGS = -20V VDS =-25 V ID =-130m A VGS = 0; pF ns VDS = -5 V; ID = –2.5 A; RL = 50ohm Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Min. Typ. Max. Units — — 130 mA — — 520 mA — — -1.3 V Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=-130mA, VGS=0V Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 2 of 6 ID,DRAIN CURRENT (AMPS) ID,DRAIN CURRENT (AMPS) SSF6007 VDS,DRAIN-TO-SOURCE VOLTAGE(VOLTS) VG ,GATE-TO-SOURCE VOLTAGE(VOLTS) Fig 2: Output Curve ID,DIODE CURRENT (AMPS) Fig 1: Transfer Characteristics VSD,DIODE FORWARD VOLTAGE(VOLTS) Fig 3: Body Diode Forward Curve ton tr V dd td(on) Rl V in V gs R gen D 90% V out toff tf td(off) VOUT 90% INVERTED 10% 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Fig 5: Switching Waveforms Fig 4: Switching Test Circuit ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 3 of 6 SSF6007 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol NOTES A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 4 of 6 SSF6007 Ordering and Marking Information Device Marking: 6007 Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT23 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj= 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj= 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 5 of 6 SSF6007 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2014.02.10 www.silikron.com Version : 1.1 page 6 of 6