SSF6014J7 Main Product Characteristics: VDSS 60V RDS(on) 11mΩ (typ.) ID 40A PQFN 5x6 Pin Assignment Schematic Diagram Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol Parameter Max. Units Continuous Drain Current, VGS @ 10V① 40 Continuous Drain Current, VGS @ 10V (Silicon limited) 60 Pulsed Drain Current② 80 Power Dissipation③ 115 W Linear Derating Factor 0.74 W/°C VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 235 mJ IAS Avalanche Current @ L=0.3mH 39 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C ID @ TC = 25°C IDM PD @TC = 25°C ©Silikron Semiconductor CO.,LTD. 2014.08.20 www.silikron.com Version : 1.0 A page 1 of 6 SSF6014J7 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 1.31 ℃/W RθJA Junction-to-ambient ④ — 62 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Min. Typ. Max. Units 60 — — V — 11 16 — 6.5 9 1 — 3 — — 1 — — 10 — — 100 — — -100 Total gate charge — 45 — Qgs Gate-to-Source charge — 4 — Qgd Gate-to-Drain("Miller") charge — 15 — td(on) Turn-on delay time — 15 — tr Rise time — 14 — td(off) Turn-Off delay time — 40 — tf Fall time — 7.3 — Ciss Input capacitance — 1480 — Coss Output capacitance — 190 — Crss Reverse transfer capacitance — 135 — mΩ V μA nA Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A VGS=10V,ID = 14A VDS = VGS, ID = 250μA VDS = 60V,VGS = 0V TJ = 150°C VGS =20V VGS = -20V ID = 15A, nC VDS=30V, VGS = 10V VGS=10V, VDS=30V, ns RL=15Ω, RGEN=2.5Ω VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 40 A — — 80 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V IS=30A, VGS=0V trr Reverse Recovery Time — 33 — ns TJ = 25°C, IF =15A, Qrr Reverse Recovery Charge — 61 — nC di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2014.08.20 www.silikron.com Version : 1.0 page 2 of 6 SSF6014J7 Test Circuits and Waveforms EAS Test Circuit Gate charge test circuit Switching Time Test Circuit Switching Waveforms Notes: ①Continuous current tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2014.08.20 www.silikron.com Version : 1.0 page 3 of 6 SSF6014J7 Mechanical Data PQFN 5X6 Package Outline Dimension. (Unit: mm) ©Silikron Semiconductor CO.,LTD. 2014.08.20 www.silikron.com Version : 1.0 page 4 of 6 SSF6014J7 Ordering and Marking Information Device Marking: SSF6014J7 Package (Available) PQFN 5X6 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Units/ Tapes/Inner Type Tape Box PQFN 5x6 3000 10 Units/Inner Box Inner Boxes/Carton Box 30000 4 Units/Carton Box 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2014.08.20 www.silikron.com Version : 1.0 page 5 of 6 SSF6014J7 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2014.08.20 www.silikron.com Version : 1.0 page 6 of 6