DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION • Very low forward voltage 1 cathode • Ultra small plastic SMD package 2 cathode • Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5 cathode 6 cathode APPLICATIONS • Ultra high-speed switching • rectification • DC/DC conversion • Switch mode power supply • Inverse polarity protection. handbook, halfpage 6 5 4 GENERAL DESCRIPTION 1, 2 5, 6 Planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 3, 4 MHC310 1 2 3 Marking code: B9. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 23 V IF continuous forward current − 1 A IFSM non-repetitive peak forward current − 8 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C t = 8.3 ms half sinewave; JEDEC method; note 1 Note 1. Only valid, if pins 3 and 4 are connected in parallel. 2003 May 01 2 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT note 1 405 K/W note 2 215 K/W Notes 1. Refer to SOT666 standard mounting conditions. 2. Mounted on printed circuit-board, 1 cm2 copper area. Soldering The only recommended soldering method is reflow soldering. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER continuous forward voltage reverse current diode capacitance CONDITIONS MAX. UNIT IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1 000 mA; note 1; see Fig.2 480 550 mV VR = 5 V; note 2 5 10 μA VR = 8 V; note 2 7 20 μA VR = 15 V; note 2; see Fig.3 10 50 μA VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF Notes 1. Only valid, if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land. 2. Pulse test: tp = 300 μs; δ = 0.02. 2003 May 01 TYP. 3 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 GRAPHICAL DATA MHC311 103 handbook, halfpage MHC312 105 handbook, halfpage IR (μA) IF (mA) (1) 104 102 (2) 103 (1) (2) (3) 10 102 (3) 1 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC313 handbook, halfpage Cd (pF) 60 40 20 0 0 5 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 May 01 15 20 25 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 80 10 4 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 May 01 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 May 01 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2003 May 01 Document order number: 9397 750 11067