DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 Aug 20 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2010EV PINNING • Forward current: 1 A PIN DESCRIPTION • Reverse voltage: 20 V 1 cathode • Very low forward voltage 2 cathode • Ultra small SMD package 3 anode • Flat leads: excellent coplanarity and improved thermal behaviour. 4 anode 5 cathode 6 cathode APPLICATIONS • Low voltage rectification • High efficiency DC/DC conversion handbook, halfpage 6 • Switch mode power supply 5 4 • Inverse polarity protection 1, 2 5, 6 • Low power consumption applications. 3, 4 MHC310 DESCRIPTION 1 Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 2 3 Marking code: F1. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 20 V − 1 A − 8 A storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C VR continuous reverse voltage IF continuous forward current IFSM non-repetitive peak forward current Tstg t = 8.3 ms half sinewave; JEDEC method; note 1 Note 1. Only valid if pins 3 and 4 are connected in parallel. 2003 Aug 20 2 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2010EV THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT note 1 405 K/W note 2 215 K/W Notes 1. Refer to SOT666 standard mounting conditions. 2. Mounted on printed circuit-board, 1 cm2 copper area. Soldering The only recommended soldering method is reflow soldering. ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER continuous forward voltage reverse current diode capacitance CONDITIONS MAX. UNIT IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1 000 mA; note 1; see Fig.2 480 550 mV VR = 5 V; note 2 5 10 μA VR = 8 V; note 2 7 20 μA VR = 15 V; note 2; see Fig.3 10 50 μA VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF Notes 1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land. 2. Pulse test: tp = 300 μs; δ = 0.02. 2003 Aug 20 TYP. 3 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2010EV GRAPHICAL DATA MHC311 103 handbook, halfpage MHC312 105 handbook, halfpage IR (μA) IF (mA) (1) 104 102 (2) 103 (1) (2) (3) 10 102 (3) 1 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 (1) Tamb = 125 °C. (2) Tamb = 85 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC313 80 Cd (pF) 60 40 20 0 5 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 °C. Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 20 25 (3) Tamb = 25 °C. handbook, halfpage Fig.4 15 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 0 10 4 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2010EV PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 Aug 20 EUROPEAN PROJECTION 5 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG2010EV DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. DISCLAIMERS Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 2003 Aug 20 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Aug 20 Document order number: 9397 750 11684