DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PMEM4010PD PNP transistor/Schottky diode module Product data sheet 2002 Oct 28 NXP Semiconductors Product data sheet PNP transistor/Schottky diode module FEATURES PMEM4010PD PINNING • 600 mW total power dissipation PIN DESCRIPTION • High current capability 1 emitter • Reduces required PCB area 2 not connected • Reduced pick and place costs 3 cathode • Small plastic SMD package. 4 anode 5 base 6 collector Transistor: • Low collector-emitter saturation voltage. Diode: • Ultra high-speed switching • Very low forward voltage handbook, halfpage 6 5 4 • Guard ring protected. 4 3 6 APPLICATIONS 5 1 • DC/DC convertors 1 • Inductive load drivers 2 3 MGU868 • General purpose load drivers • Reverse polarity protection circuits. Marking code: B2. Fig.1 Simplified outline (SOT457) and symbol. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4010ND. 2002 Oct 28 2 NXP Semiconductors Product data sheet PNP transistor/Schottky diode module PMEM4010PD LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current − −1 A Tj junction temperature − 150 °C Schottky barrier diode VR continuous reverse voltage − 20 V IF continuous forward current − 1 A IFSM non repetitive peak forward current − 5 A Tj junction temperature − 125 °C − 600 mW t = 8.3 ms half sinewave; JEDEC method Combined device Tamb ≤ 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −65 +125 °C Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 VALUE UNIT 208 K/W Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2002 Oct 28 3 NXP Semiconductors Product data sheet PNP transistor/Schottky diode module PMEM4010PD CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT NPN transistor ICBO collector-base cut-off current VCB = −40 V; IE = 0 − − −100 nA VCB = −40 V; IE = 0; Tamb = 150 °C − − −50 µA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 − − −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA hFE DC current gain VCE = −5 V; IC = −1 mA 300 − − VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − IC = −100 mA; IB = −1 mA − − −140 mV IC = −500 mA; IB = −50 mA − − −170 mV IC = −1 A; IB = −100 mA − − −310 mV VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 <340 mΩ VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − − MHz IF = 10 mA; note 1 − 240 270 mV IF = 100 mA; note 1 − 300 350 mV IF = 1000 mA; see Fig.7; note 1 − 480 550 mV VR = 5 V; note 1 − 5 10 µA VR = 8 V; note 1 − 7 20 µA VR = 15 V; see Fig.8; note 1 − 10 50 µA VR = 5 V; f = 1 MHz; see Fig.9 − 19 25 pF Schottky barrier diode VF IR Cd continuous forward voltage reverse current diode capacitance Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 Oct 28 4 NXP Semiconductors Product data sheet PNP transistor/Schottky diode module MHC088 1200 MHC089 −10 handbook, halfpage handbook, halfpage hFE 1000 PMEM4010PD VBE (V) (1) 800 600 −1 (2) (1) (2) 400 (3) (3) 200 0 −10−1 −1 −10 −102 −10−1 −10−1 −103 −104 IC (mA) −1 −10 PNP transistor; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. PNP transistor; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC090 −103 handbook, halfpage −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC091 102 handbook, halfpage VCEsat (mV) RCEsat (Ω) −102 10 (1) −10 1 (2) (3) (1) (2) (3) −1 −1 −10 −102 −103 IC (mA) 10−1 −10−1 −104 −1 PNP transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. PNP transistor; IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Oct 28 5 −10 −102 −103 −104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP transistor/Schottky diode module MHC092 300 fT (MHz) 250 PMEM4010PD MHC311 103 handbook, halfpage handbook, halfpage IF (mA) 102 200 (1) (2) (3) 10 150 100 1 50 0 −200 0 −400 −600 10−1 −800 −1000 IC (mA) 0 0.2 PNP transistor; VCE = −10 V. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Fig.7 Transition frequency as a function of collector current. MHC312 105 handbook, halfpage 0.4 VF (V) 0.6 Forward current as a function of forward voltage; typical values. MHC313 80 handbook, halfpage IR (µA) Cd (pF) (1) 104 60 (2) 103 40 102 (3) 20 10 1 0 5 10 15 20 0 25 0 5 10 15 VR (V) Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Schottky barrier diode; f = 1 MHz; Tamb = 25 °C. Fig.8 Fig.9 Reverse current as a function of reverse voltage; typical values. 2002 Oct 28 6 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet PNP transistor/Schottky diode module PMEM4010PD APPLICATION INFORMATION handbook, halfpage handbook, halfpage Vin VCC Vout IN CONTROLLER MGU866 MGU867 Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode. Fig.10 DC/DC convertor. 2002 Oct 28 7 NXP Semiconductors Product data sheet PNP transistor/Schottky diode module PMEM4010PD PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2002 Oct 28 REFERENCES IEC JEDEC EIAJ SC-74 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet PNP transistor/Schottky diode module PMEM4010PD DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2002 Oct 28 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp10 Date of release: 2002 Oct 28 Document order number: 9397 750 10211