BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 1.3 Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current - - 200 mA VR reverse voltage - - 30 V - - 800 mV - - 2 µA Per diode VF forward voltage IF = 100 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C IR reverse current VR = 25 V; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product BAT74S NXP Semiconductors Dual Schottky barrier diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 n.c. not connected 3 K2 cathode (diode 2) 4 A2 anode (diode 2) 5 n.c. not connected 6 K1 cathode (diode 1) Simplified outline Graphic symbol 6 5 4 1 2 3 TSSOP6 (SOT363) K1 A2 A1 K2 aaa-005709 3. Ordering information Table 3. Ordering information Type number Package BAT74S Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code [1] BAT74S 74% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR reverse voltage - 30 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current tp < 10 ms; Tj(init) = 25 °C - 600 mA Ptot total power dissipation Tamb ≤ 25 °C - 240 mW Tj junction temperature - 125 °C BAT74S Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 2 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature -55 125 °C storage temperature -65 150 °C - 60 V - 30 V - 110 mA - 200 mA Per device VR series connection reverse voltage IF forward current IFRM repetitive peak forward current [1] [1] tp ≤ 1 s; δ ≤ 0.5 If both diodes are in forward operation at the same moment, total device current is maximum 110 mA. If one diode is in reverse and the other in forward operation at the same moment, total device current is maximum 200 mA. mbl889 300 Ptot (mW) 200 100 0 Fig. 1. 0 75 Tamb (°C) 150 Power derating curve 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit - - 416 K/W Per diode Rth(j-a) [1] BAT74S Product data sheet [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 3 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 0.1 mA; pulsed; tp = 300 µs; - - 240 mV - - 320 mV - - 400 mV - - 500 mV - - 800 mV - - 2 µA Per diode VF δ = 0.02 ; Tamb = 25 °C IF = 1 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C IF = 10 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C IF = 30 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C IF = 100 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C IR reverse current VR = 25 V; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C Cd diode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - - 10 pF trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; - - 5 ns IR(meas) = 1 mA; Tamb = 25 °C 006aac829 103 IF (mA) (1) (3) (2) aaa-004515 103 IR (µA) 102 (1) 102 (2) 10 10 (1) (2) (3) 1 10-1 0.0 Fig. 2. 1 0.4 0.8 VF (V) 1.2 10-1 (3) 0 10 (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C Forward current as a function of forward voltage; typical values BAT74S Product data sheet Fig. 3. VR (V) 30 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 22 November 2012 20 © NXP B.V. 2012. All rights reserved 4 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode 006aac891 10 Cd (pF) 8 6 4 2 0 0 10 20 VR (V) 30 Tamb = 25 °C; f = 1 MHz Fig. 4. Diode capacitance as a function of reverse voltage; typical values 8. Test information tr D.U.T. IF RS = 50 Ω V = VR + IF × RS tp 10 % t + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω mga881 VR (1) 90 % input signal output signal (1) IR = 1 mA Fig. 5. Reverse recovery time test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAT74S Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 5 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.65 1.3 0.3 0.2 0.25 0.10 Dimensions in mm Fig. 6. 06-03-16 Package outline TSSOP6 (SOT363) 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) Dimensions in mm 1.8 Fig. 7. occupied area sot363_fr Reflow soldering footprint for TSSOP6 (SOT363) BAT74S Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 6 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 Fig. 8. sot363_fw Wave soldering footprint for TSSOP6 (SOT363) 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAT74S v.5 20121122 Product data sheet - BAT74S v.4 Modifications: • • • • • • • • • • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1 Product profile: updated Section 4 Marking: updated Table 5 Limiting values: changed Tamb minimum value to -55 °C according to AEC-Q101 Figure 2 and 3: updated Section 8 Test information: added Figure 6: superseded by minimized package outline drawing Section 10 Soldering: added Section 11 Legal information: updated BAT74S v.4 20030411 Product specification - BAT74S v.3 BAT74S v.3 19980710 Product specification - BAT74S v.2 BAT74S v.2 19980206 Product specification - BAT74S v.1 BAT74S v.1 19971107 Product specification - - BAT74S Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 8 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BAT74S Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 9 / 10 BAT74S NXP Semiconductors Dual Schottky barrier diode 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................3 7 Characteristics ....................................................... 4 8 8.1 Test information ..................................................... 5 Quality information ......................................... 9 Package outline ..................................................... 6 10 Soldering ................................................................ 6 11 Revision history ..................................................... 7 12 12.1 12.2 12.3 12.4 Legal information ...................................................8 Data sheet status ................................................. 8 Definitions .............................................................8 Disclaimers ...........................................................8 Trademarks .......................................................... 9 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 November 2012 BAT74S Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 10 / 10