Datasheet

AON7402
30V N-Channel MOSFET
General Description
Product Summary
The AON7402 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
39A
RDS(ON) (at VGS=10V)
< 10mΩ
RDS(ON) (at VGS = 4.5V)
< 15mΩ
100% UIS Tested!
100% Rg Tested!
Top View
DFN 3x3 EP
Bottom View
D
Top View
S
1
8
D
S
S
2
7
3
6
D
D
G
4
5
D
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
V
A
80
13.5
IDSM
TA=70°C
±20
24
IDM
TA=25°C
Continuous Drain
Current
Units
V
39
ID
TC=100°C
Maximum
30
A
10.8
C
IAR
20
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
20
mJ
Avalanche Current
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Rev 6: Nov 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
10.4
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
26
PD
-55 to 150
Typ
30
60
4
°C
Max
40
75
4.8
Units
°C/W
°C/W
°C/W
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AON7402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
V
80
TJ=55°C
TJ=125°C
VGS=4.5V, ID=20A
1.7
2.2
8.6
10
13
16
12.1
15
Forward Transconductance
VDS=5V, ID=20A
43
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
V
A
gFS
Output Capacitance
µA
5
±100
VGS=10V, ID=20A
Coss
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
30
A
770
pF
240
pF
77
pF
0.8
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14.8
17.8
nC
Qg(4.5V) Total Gate Charge
7.1
8.5
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.4
nC
2.2
nC
3.1
nC
5
ns
3
ns
18
ns
3
ns
11
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
23
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Nov 2011
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AON7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
80
10V
6V
4.5V
VDS=5V
50
60
4V
ID(A)
ID (A)
40
40
3.5V
30
20
20
VGS=3V
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
16
Normalized On-Resistance
1.8
14
VGS=4.5V
RDS(ON) (mΩ
Ω)
25°C
125°C
10
12
10
8
VGS=10V
6
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V
ID=20A 2
10
1.2
1
0.8
4
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
30
1.0E+02
ID=20A
1.0E+01
25
40
1.0E+00
125°C
15
10
IS (A)
RDS(ON) (mΩ
Ω)
20
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
25°C
5
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=20A
8
1000
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
800
600
400
200
0
Crss
0
0
2
4
6
8
10
12
14
Qg (nC)
Figure 7: Gate-Charge Characteristics
16
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
10µs
100.0
1.0
100µs
1ms
10ms
DC
Power (W)
10.0
0.1
160
TJ(Max)=150°C
TC=25°C
120
17
5
2
10
10µs
RDS(ON)
ID (Amps)
Coss
80
40
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4.8°C/W
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Nov 2011
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Page 4 of 6
AON7402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
IAR (A) Peak Avalanche Current
TA=25°C
25
Power Dissipation (W)
TA=150°C
TA=100°C
TA=125°C
15
10
5
0
10
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
1000
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
10000
50
TA=25°C
40
1000
Power (W)
Current rating ID(A)
20
30
20
17
5
2
10
100
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 6: Nov 2011
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Page 5 of 6
AON7402
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 6: Nov 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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