AON7292 100V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application VDS ID (at VGS=10V) 100V 23A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS=4.5V) < 32mΩ 100% UIS Tested 100% Rg Tested • Synchronous rectification in DC/DC and AC/DC converters • Isolated DC/DC Converters in Telecom and Industrial DFN 3.3x3.3 Bottom View Top View D Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7292 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C V A 45 9 IDSM TA=70°C ±20 15 IDM TA=25°C Continuous Drain Current Units V 23 ID TC=100°C C Maximum 100 A 7 IAS 14 A Avalanche energy L=0.1mH C EAS 10 mJ VDS Spike VSPIKE 120 V Avalanche Current Power Dissipation 10µs TC=25°C B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: November 2013 4.1 Steady-State Steady-State W 2.6 TJ, TSTG Symbol t ≤ 10s W 11 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 28 RθJA RθJC -55 to 150 Typ 25 50 3.7 www.aosmd.com °C Max 30 60 4.5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.6 ±100 nA 2.1 2.6 V 20 24 38 46 25.5 32 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=9A 32 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=7A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=9A Coss Units V VDS=100V, VGS=0V IDSS Max VGS=0V, VDS=50V, f=1MHz mΩ mΩ S 1 V 23 A 1170 pF 90 pF 8 pF 0.65 1.0 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 17 25 nC Qg(4.5V) Total Gate Charge 8 15 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=50V, ID=9A 0.3 nC 3 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 5 ns VGS=10V, VDS=50V, RL=5.55Ω, RGEN=3Ω 3 ns 21 ns 3 ns IF=9A, dI/dt=500A/µs 24 Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 110 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: November 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 4.5V VDS=5V 4V 30 30 ID(A) 40 ID (A) 40 3.5V 20 20 125°C 10 10 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 35 2.4 Normalized On-Resistance 2.2 30 RDS(ON) (mΩ Ω) VGS=4.5V 25 20 VGS=10V 15 VGS=10V ID=9A 2 1.8 1.6 1.4 VGS=4.5V ID=7A 1.2 1 0.8 10 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 60 1.0E+02 ID=9A 1.0E+01 50 40 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 125°C 1.0E-02 30 1.0E-03 25°C 20 1.0E-04 25°C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: November 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=50V ID=9A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 2 900 600 Coss 300 Crss 0 0 0 5 10 15 20 0 20 Qg (nC) Figure 7: Gate-Charge Characteristics 60 80 100 300 100.0 Power (W) 10µs 100µs 1ms 10ms 1.0 200 150 100 DC 0.1 TJ(Max)=150°C TC=25°C 250 10µs RDS(ON) limited 10.0 ID (Amps) 40 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TC=25°C 50 0 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Power Dissipation (W) 30 30 Current rating ID(A) 20 10 0 20 10 0 0 25 50 75 100 125 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: November 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6