AOD538/AOI538 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 70A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 3.1mΩ RDS(ON) (at VGS=4.5V) < 4.8mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial TO252 DPAK TopView TO-251A IPAK Top View Bottom View D D D S D G G S S G D Bottom View G G D S S D Orderable Part Number Package Type Form Minimum Order Quantity AOD538 AOI538 TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2014 IAS 36 A EAS 65 mJ VSPIKE 36 V 93 Steady-State Steady-State W 46 6.2 W 4 TJ, TSTG Symbol t ≤ 10s A 27 PDSM Junction and Storage Temperature Range A 34 PD TA=25°C V 280 IDSM TA=70°C ±20 54 IDM TA=25°C Continuous Drain Current Units V 70 ID TC=100°C Maximum 30 RθJA RθJC -55 to 175 Typ 15 40 1.3 www.aosmd.com °C Max 20 50 1.6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.4 ±100 nA 1.8 2.2 V 2.5 3.1 3.6 4.5 4.8 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 3.8 gFS Forward Transconductance VDS=5V, ID=20A 91 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=20A Coss Units 30 VDS=30V, VGS=0V IDSS Max VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 1 V 70 A 2160 pF 915 pF 115 pF 1.8 2.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 30 42 nC Qg(4.5V) Total Gate Charge 14 20 nC Qgs Gate Source Charge Qgd tD(on) f=1MHz VGS=10V, VDS=15V, ID=20A 0.9 5.1 nC Gate Drain Charge 6.3 nC Turn-On DelayTime 8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 5.5 ns IF=20A, dI/dt=500A/µs 16.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 34.2 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4 ns 29 ns A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 100 4.5V VDS=5V 3.5V 80 60 60 ID(A) ID (A) 80 40 125°C 40 3V 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 6 1.8 Normalized On-Resistance 5 VGS=4.5V RDS(ON) (mΩ Ω) 2 4 3 2 VGS=10V 1 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 1.0E+02 ID=20A 1.0E+01 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 6 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2000 1500 Coss 1000 2 500 0 Crss 0 0 10 20 30 40 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 500 10µs RDS(ON) limited 400 100µs 10.0 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 TJ(Max)=175°C TC=25°C 10µs Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 10 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2014 www.aosmd.com Page 4 of 6 100 100 80 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 175 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: January 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6