AON7254 150V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application VDS 150V 17A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 54mΩ RDS(ON) (at VGS=4.5V) < 66mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial DFN 3.3x3.3 Top View D Bottom View Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7254 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current V A 30 5.5 IDSM TA=70°C ±20 11 IDM TA=25°C Units V 17 ID TC=100°C C Maximum 150 A 4.5 Avalanche Current C IAS 15 A Avalanche energy L=0.3mH C EAS 34 mJ VDS Spike VSPIKE 180 V 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.1.0: October 2013 4.1 Steady-State Steady-State W 2.6 TJ, TSTG Symbol t ≤ 10s W 15.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 39 RθJA RθJC -55 to 150 Typ 25 50 2.6 www.aosmd.com °C Max 30 60 3.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.7 ±100 nA 2.15 2.7 V 45 54 89 107 52.5 66 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=5A 17 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=2A DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=75V, f=1MHz f=1MHz µA 5 VGS=10V, ID=5A Coss Units V VDS=150V, VGS=0V IDSS Max 1.4 mΩ mΩ S 1 V 17 A 675 pF 78 pF 4 pF 2.9 Ω 4.4 SWITCHING PARAMETERS Total Gate Charge Qg(10V) 11.5 20 nC Qg(4.5V) Total Gate Charge 5.5 10 nC Qgs Gate Source Charge 2 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=75V, ID=5A VGS=10V, VDS=75V, RL=15Ω, RGEN=3Ω 3 ns 20 ns 5 ns IF=5A, dI/dt=500A/µs 37 Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 210 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 10V 30 4V 30 ID(A) ID (A) VDS=5V 4.5V 20 20 3.5V 125°C 10 10 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 2 80 4 5 2.4 2.2 Normalized On-Resistance 70 RDS(ON) (mΩ Ω) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) VGS=4.5V 60 50 40 VGS=10V 30 VGS=10V ID=5A 2 1.8 1.6 1.4 VGS=4.5V ID=2A 1.2 1 0.8 20 0 5 10 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 140 1.0E+01 ID=5A 1.0E+00 125°C 100 125°C 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 120 80 60 1.0E-02 25°C 1.0E-03 40 1.0E-04 25°C 20 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=75V ID=5A 8 Capacitance (pF) VGS (Volts) 1200 6 4 Ciss 800 400 2 Coss Crss 0 0 0 3 6 9 12 15 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics 75 100 125 150 VDS (Volts) Figure 8: Capacitance Characteristics 300 100.0 Power (W) RDS(ON) limited 10µs 100µs 1ms 10ms 1.0 200 150 100 DC 0.1 TJ(Max)=150°C TC=25°C 250 10µs 10.0 ID (Amps) 50 TJ(Max)=150°C TC=25°C 50 0 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.2°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 20 40 Current rating ID(A) Power Dissipation (W) 15 30 20 10 0 10 5 0 0 25 50 75 100 125 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TJ(Max)=150°C TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6