Datasheet

AON7404
20V N-Channel MOSFET
General Description
Product Summary
The AON7404 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
VDS
20V
20A
RDS(ON) (at VGS=4.5V)
< 6mΩ
RDS(ON) (at VGS=2.5V)
< 7.5mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3_EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
V
A
160
20
IDSM
TA=70°C
±12
31
IDM
TA=25°C
Continuous Drain
Current
Units
V
40
ID
TC=100°C
Maximum
20
A
16
Avalanche Current C
IAS, IAR
57
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
162
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 2: Mar. 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
16
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
40
PD
-55 to 150
Typ
30
60
2.6
°C
Max
40
75
3.1
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
20
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
TJ=55°C
VDS=0V, VGS= ±12V
100
1
6
6.2
7.4
VGS=2.5V, ID=18A
5.8
7.5
mΩ
VDS=5V, ID=20A
105
1
V
40
A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.6
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
V
4.9
Static Drain-Source On-Resistance
Output Capacitance
1.6
nA
A
RDS(ON)
Coss
µA
5
VGS=4.5V, ID=20A
Units
V
VDS=20V, VGS=0V
IDSS
Crss
Max
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=10V, ID=20A
mΩ
S
3080
3860
4630
pF
520
740
960
pF
350
580
810
pF
0.6
1.4
2.1
Ω
28
36
43
nC
7
9
11
nC
7
12
17
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
13
17
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
29
36
43
VGS=10V, VDS=10V, RL=0.56Ω,
RGEN=3Ω
7
ns
8
ns
70
ns
18
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum avalanche current limited by tester capability.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Mar. 2011
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Page 2 of 6
AON7404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
100
4.5V
VDS=5V
2.5V
80
2V
60
ID(A)
ID (A)
60
40
40
125°C
25°C
20
20
VGS=1.5V
0
0
0
1
2
3
4
5
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.4
8
Normalized On-Resistance
10
RDS(ON) (mΩ )
2.5
VGS=2.5V
6
4
VGS=4.5V
2
0
VGS=4.5V
ID=20A
1.2
17
5
VGS=2.5V
2
ID=16A
10
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
10
ID=20A
1.0E+01
9
7
IS (A)
RDS(ON) (mΩ )
40
1.0E+00
8
125°C
1.0E-01
125°C
25°C
1.0E-02
6
1.0E-03
5
1.0E-04
25°C
4
1.0E-05
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
VDS=10V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
8
6
4
2
5000
Ciss
4000
3000
Coss
2000
1000
Crss
0
0
20
40
60
80
0
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10µs
RDS(ON)
limited
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
160
10µs
Power (W)
100.0
ID (Amps)
5
TJ(Max)=150°C
TC=25°C
120
17
5
2
10
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.1°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Mar. 2011
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Page 4 of 6
AON7404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
100.0
TA=150°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000.0
TA=125°C
40
30
20
10
0
10.0
1
0
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
50
TA=25°C
1000
Power (W)
Current rating ID(A)
40
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: Mar. 2011
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Page 5 of 6
AON7404
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: Mar. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6