AON7404 20V N-Channel MOSFET General Description Product Summary The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) VDS 20V 20A RDS(ON) (at VGS=4.5V) < 6mΩ RDS(ON) (at VGS=2.5V) < 7.5mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3_EP Bottom View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 160 20 IDSM TA=70°C ±12 31 IDM TA=25°C Continuous Drain Current Units V 40 ID TC=100°C Maximum 20 A 16 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 162 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: Mar. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 16 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 40 PD -55 to 150 Typ 30 60 2.6 °C Max 40 75 3.1 Units °C/W °C/W °C/W Page 1 of 6 AON7404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 20 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 160 TJ=55°C VDS=0V, VGS= ±12V 100 1 6 6.2 7.4 VGS=2.5V, ID=18A 5.8 7.5 mΩ VDS=5V, ID=20A 105 1 V 40 A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance V 4.9 Static Drain-Source On-Resistance Output Capacitance 1.6 nA A RDS(ON) Coss µA 5 VGS=4.5V, ID=20A Units V VDS=20V, VGS=0V IDSS Crss Max VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge VGS=10V, VDS=10V, ID=20A mΩ S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 nC 7 9 11 nC 7 12 17 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 17 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 29 36 43 VGS=10V, VDS=10V, RL=0.56Ω, RGEN=3Ω 7 ns 8 ns 70 ns 18 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum avalanche current limited by tester capability. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar. 2011 www.aosmd.com Page 2 of 6 AON7404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 4.5V VDS=5V 2.5V 80 2V 60 ID(A) ID (A) 60 40 40 125°C 25°C 20 20 VGS=1.5V 0 0 0 1 2 3 4 5 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.4 8 Normalized On-Resistance 10 RDS(ON) (mΩ ) 2.5 VGS=2.5V 6 4 VGS=4.5V 2 0 VGS=4.5V ID=20A 1.2 17 5 VGS=2.5V 2 ID=16A 10 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 10 ID=20A 1.0E+01 9 7 IS (A) RDS(ON) (mΩ ) 40 1.0E+00 8 125°C 1.0E-01 125°C 25°C 1.0E-02 6 1.0E-03 5 1.0E-04 25°C 4 1.0E-05 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=10V ID=20A 6000 Capacitance (pF) VGS (Volts) 8 6 4 2 5000 Ciss 4000 3000 Coss 2000 1000 Crss 0 0 20 40 60 80 0 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs RDS(ON) limited 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 160 10µs Power (W) 100.0 ID (Amps) 5 TJ(Max)=150°C TC=25°C 120 17 5 2 10 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.1°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Mar. 2011 www.aosmd.com Page 4 of 6 AON7404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C 100.0 TA=150°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000.0 TA=125°C 40 30 20 10 0 10.0 1 0 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 50 TA=25°C 1000 Power (W) Current rating ID(A) 40 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: Mar. 2011 www.aosmd.com Page 5 of 6 AON7404 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Mar. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6