Datasheet

AON7442
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
ID (at VGS=10V)
30V
50A
RDS(ON) (at VGS=10V)
< 1.9mΩ
RDS(ON) (at VGS = 4.5V)
< 3.3mΩ
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentG
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.05mH
VDS Spike
C
100ns
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2.0: January 2016
IAS
66
A
EAS
109
mJ
VSPIKE
36
V
83
Steady-State
Steady-State
W
33
6.2
RθJA
RθJC
www.aosmd.com
W
4
TJ, TSTG
Symbol
t ≤ 10s
A
35
PDSM
TA=70°C
A
44
PD
TC=100°C
V
200
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Units
V
50
ID
TC=100°C
Maximum
30
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
1.9
3.3
mΩ
1
V
50
A
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.4
mΩ
S
2994
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
2.9
0.7
Diode Forward Voltage
nA
2.2
1.5
153
Forward Transconductance
VSD
100
2.3
2.4
gFS
Output Capacitance
1.8
VGS=4.5V, ID=20A
VDS=5V, ID=20A
µA
5
1.2
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
pF
1276
pF
196
pF
0.9
1.4
Ω
47.7
65
nC
23
31
nC
7.6
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
10.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
7.5
ns
30.8
ns
8.8
ns
IF=20A, dI/dt=500A/µs
20
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
46
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: January 2016
www.aosmd.com
Page 2 of 6
AON7442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
4.5V
80
80
10V
60
3.5V
ID(A)
ID (A)
60
3V
40
40
20
20
125°C
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
5
2
3
4
5
6
Normalized On-Resistance
1.8
4
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
3
2
1
VGS=10V
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
1.0E+02
ID=20A
1.0E+01
4
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
125°C
3
1.0E-01
1.0E-02
25°C
2
1.0E-03
25°C
1
1.0E-04
1.0E-05
0.0
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: January 2016
0.2
0.4
0.6
0.8
1.0
1.2
10
www.aosmd.com
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=15V
ID=20A
3500
Ciss
8
Capacitance (pF)
VGS (Volts)
3000
6
4
2500
2000
Coss
1500
1000
Crss
2
500
0
0
0
10
20
30
40
50
0
5
10µs
RDS(ON)
400
20
25
10.0
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
0.1
1
Power (W)
ID (Amps)
15
500
1000.0
100.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
300
200
100
10
0
0.0001
100
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
1
PDM
0.1
Single Pulse
0.01
0.00001
0.0001
Ton
0.001
0.01
0.1
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: January 2016
www.aosmd.com
Page 4 of 6
AON7442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
50
80
Current rating ID(A)
Power Dissipation (W)
90
70
60
50
40
30
20
40
30
20
10
10
0
0
0
25
50
75
100
125
150
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
TA=25°C
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
40
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: January 2016
www.aosmd.com
Page 5 of 6
AON7442
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.2.0: January 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6