Datasheet

AON6440
40V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON6440 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
40V
ID (at VGS=10V)
85A
RDS(ON) (at VGS=10V)
< 3.4mΩ
RDS(ON) (at VGS = 4.5V)
< 4.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
V
A
250
20
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Maximum
40
A
15
Avalanche Current C
IAR
72
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
259
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: November 2010
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
-55 to 150
Typ
14
40
1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6440
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
40
V
VDS=40V, VGS=0V
100
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
250
TJ=55°C
500
VDS=0V, VGS= ±20V
100
VGS=10V, ID=20A
1.7
2.2
2.8
3.4
4.6
5.5
VGS=4.5V, ID=20A
3.6
4.5
VDS=5V, ID=20A
76
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
nA
V
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
85
A
4000
5000
6000
pF
550
780
1000
pF
180
300
420
pF
0.5
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
65
81
97
nC
Qg(4.5V) Total Gate Charge
32
40
48
nC
11
14
17
nC
15
21
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
9
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
13.7
ns
4.5
ns
54
ns
10
ns
13
16
19
30
38
45
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment .
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by Package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 1: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2009
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Page 2 of 7
AON6440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
10V
4V
VDS=5V
5V
120
3.5V
120
7V
90
ID(A)
ID (A)
90
60
60
VGS=3V
125°C
30
30
25°C
0
0
0
1
2
3
4
0
5
5
3
4
5
6
Normalized On-Resistance
1.8
4
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
3
VGS=10V
2
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V
2
ID=20A
1.2
10
1
0.8
1
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
10
1.0E+02
ID=20A
9
1.0E+01
40
8
1.0E+00
7
6
IS (A)
RDS(ON) (mΩ )
1
125°C
1.0E-01
125°C
1.0E-02
5
1.0E-03
25°C
4
1.0E-04
3
25°C
1.0E-05
2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: January 2009
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0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
(Note E)
Page 3 of 7
AON6440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
10
VDS=20V
ID=20A
6000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
5000
4000
3000
2000
Coss
2
Crss
1000
0
0
0
20
40
60
80
0
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
40
400
1000.0
350
10µs
RDS(ON)
limited
10µs
100µs
10.0
1ms
DC
1.0
0.1
250
17
5
2
10
200
150
100
TJ(Max)=150°C
TC=25°C
50
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
TJ(Max)=150°C
TC=25°C
300
Power (W)
ID (Amps)
100.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2009
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Page 4 of 7
AON6440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
200
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
230
170
TA=100°C
140
TA=150°C
110
80
50
TA=125°C
70
60
50
40
30
20
10
0
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
10000
80
1000
Power (W)
Current rating ID(A)
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.0001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
1
100
10000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: January 2009
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Page 5 of 7
AON6440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
12
18
125ºC
60
25ºC
trr (ns)
8
10
125ºC
20
1.5
trr
8
6
S
4
25ºC
1
25ºC
6
Irm
10
2
25ºC
12
40
30
125ºC
14
10
Qrr
Irm (A)
Qrr (nC)
50
2.5
di/dt=800A/µs
16
S
di/dt=800A/µs
0.5
125ºC
2
0
4
0
5
10
15
20
25
0
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
70
60
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
15
Is=20A
5
25
2.5
Is=20A
125ºC
12
20
9
15
2
125ºC
30
125ºC
Qrr
20
6
25ºC
10
3
trr
10
0
0
200
400
600
800
1000
S
5
0.5
125º
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 0: January 2009
1
25ºC
Irm
0
1.5
25ºC
S
25ºC
trr (ns)
40
Irm (A)
Qrr (nC)
50
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON6440
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: January 2009
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7