AON6440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 40V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 3.4mΩ RDS(ON) (at VGS = 4.5V) < 4.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 250 20 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 40 A 15 Avalanche Current C IAR 72 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 259 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: November 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6440 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 40 V VDS=40V, VGS=0V 100 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 250 TJ=55°C 500 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 1.7 2.2 2.8 3.4 4.6 5.5 VGS=4.5V, ID=20A 3.6 4.5 VDS=5V, ID=20A 76 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA nA V A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 85 A 4000 5000 6000 pF 550 780 1000 pF 180 300 420 pF 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 65 81 97 nC Qg(4.5V) Total Gate Charge 32 40 48 nC 11 14 17 nC 15 21 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 9 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13.7 ns 4.5 ns 54 ns 10 ns 13 16 19 30 38 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment . D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by Package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 1: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: January 2009 www.aosmd.com Page 2 of 7 AON6440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 10V 4V VDS=5V 5V 120 3.5V 120 7V 90 ID(A) ID (A) 90 60 60 VGS=3V 125°C 30 30 25°C 0 0 0 1 2 3 4 0 5 5 3 4 5 6 Normalized On-Resistance 1.8 4 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 3 VGS=10V 2 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V 2 ID=20A 1.2 10 1 0.8 1 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 10 1.0E+02 ID=20A 9 1.0E+01 40 8 1.0E+00 7 6 IS (A) RDS(ON) (mΩ ) 1 125°C 1.0E-01 125°C 1.0E-02 5 1.0E-03 25°C 4 1.0E-04 3 25°C 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: January 2009 www.aosmd.com 0.0 0.2 0.4 0.6 VSD (Volts) Figure 6: Body-Diode Characteristics 0.8 1.0 (Note E) Page 3 of 7 AON6440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=20V ID=20A 6000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 5000 4000 3000 2000 Coss 2 Crss 1000 0 0 0 20 40 60 80 0 100 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 400 1000.0 350 10µs RDS(ON) limited 10µs 100µs 10.0 1ms DC 1.0 0.1 250 17 5 2 10 200 150 100 TJ(Max)=150°C TC=25°C 50 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance TJ(Max)=150°C TC=25°C 300 Power (W) ID (Amps) 100.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: January 2009 www.aosmd.com Page 4 of 7 AON6440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 200 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 230 170 TA=100°C 140 TA=150°C 110 80 50 TA=125°C 70 60 50 40 30 20 10 0 20 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 100 10000 80 1000 Power (W) Current rating ID(A) TA=25°C 60 40 17 5 2 10 100 10 20 1 0.0001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.01 1 100 10000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: January 2009 www.aosmd.com Page 5 of 7 AON6440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 12 18 125ºC 60 25ºC trr (ns) 8 10 125ºC 20 1.5 trr 8 6 S 4 25ºC 1 25ºC 6 Irm 10 2 25ºC 12 40 30 125ºC 14 10 Qrr Irm (A) Qrr (nC) 50 2.5 di/dt=800A/µs 16 S di/dt=800A/µs 0.5 125ºC 2 0 4 0 5 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 70 60 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 15 Is=20A 5 25 2.5 Is=20A 125ºC 12 20 9 15 2 125ºC 30 125ºC Qrr 20 6 25ºC 10 3 trr 10 0 0 200 400 600 800 1000 S 5 0.5 125º 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0: January 2009 1 25ºC Irm 0 1.5 25ºC S 25ºC trr (ns) 40 Irm (A) Qrr (nC) 50 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6440 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0: January 2009 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7