Datasheet

AON6444
60V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON6444 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
60V
ID (at VGS=10V)
81A
RDS(ON) (at VGS=10V)
< 6.5mΩ
RDS(ON) (at VGS = 4.5V)
< 8mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
V
A
170
14
IDSM
TA=70°C
±20
51
IDM
TA=25°C
Continuous Drain
Current
Units
V
81
ID
TC=100°C
Maximum
60
A
11
Avalanche Current C
IAR
58
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
168
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: November 2010
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
-55 to 150
Typ
14
40
1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6444
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
60
V
VDS=60V, VGS=0V
100
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
170
TJ=55°C
500
VDS=0V, VGS= ±20V
100
VGS=10V, ID=20A
2
2.5
5.4
6.5
9.6
11.5
VGS=4.5V, ID=20A
6.4
8
VDS=5V, ID=20A
75
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
nA
V
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
81
A
3800
4800
5800
pF
330
470
610
pF
110
190
270
pF
0.5
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
64
80
96
nC
Qg(4.5V) Total Gate Charge
32
40
48
nC
12
15
18
nC
14
20
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
8
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
13.5
ns
4.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
14
18
22
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
43
54
65
51
ns
7
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 1: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
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Page 2 of 7
AON6444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
10V
7V
120
150
4V
VDS=5V
120
4.5V
5V
90
ID(A)
ID (A)
90
3.5V
60
60
30
30
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
2
7
RDS(ON) (mΩ )
1
VGS=4.5V
6
VGS=10V
5
VGS=10V
ID=20A
1.8
1.6
17
5
VGS=4.5V
ID=20A 2
10
1.4
1.2
1
0.8
4
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
15
1.0E+02
ID=20A
1.0E+01
13
40
9
IS (A)
RDS(ON) (mΩ )
1.0E+00
11
125°C
125°C
1.0E-01
1.0E-02
7
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
3
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
VDS=30V
ID=20A
6000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
5000
4000
3000
2000
Coss
2
Crss
1000
0
0
0
20
40
60
80
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
400
1000.0
360
ID (Amps)
RDS(ON)
limited
10.0
100µs
1ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
320
10µs
TJ(Max)=150°C
TC=25°C
280
Power (W)
10µs
100.0
17
5
2
10
240
200
160
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
Zθ JC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
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Page 4 of 7
AON6444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
120
Power Dissipation (W)
IAR (A) Peak Avalanche Current
150
TA=25°C
90
TA=100°C
60
TA=150°C
30
TA=125°C
70
60
50
40
81A
30
20
10
0
0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
10000
80
1000
Power (W)
Current rating ID(A)
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.0001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
1
100
10000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 1: November 2010
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Page 5 of 7
AON6444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
21
2
125ºC
di/dt=800A/µs
di/dt=800A/µs
80
18
20
1.6
15
125ºC
40
10
trr
Irm
25ºC
0.8
0.4
3
0
0
5
10
15
20
25
125ºC
0
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
100
80
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25
Is=20A
81A
25ºC
S
5
0
1.2
9
6
20
25ºC
12
S
25ºC
trr (ns)
Qrr
Irm (A)
Qrr (nC)
15
60
125ºC
30
2.5
Is=20A
125ºC
25
20
2
125ºC
40
Qrr
10
125ºC
20
1.5
trr
15
25ºC
1
10
5
25ºC
25ºC
5
0
0
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: November 2010
0.5
S
125º
Irm
0
S
15
25ºC
trr (ns)
60
Irm (A)
Qrr (nC)
20
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON6444
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: November 2010
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7