Datasheet

AON6202
30V N-Channel MOSFET
General Description
Product Summary
The AON6202 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
VDS
30V
24A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 5.5mΩ
RDS(ON) (at VGS = 4.5V)
< 7.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
150
21
IDSM
TA=70°C
±20
19
IDM
TA=25°C
Units
V
24
ID
TC=100°C
Maximum
30
A
17
Avalanche Current C
IAS, IAR
38
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
72
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1 : March 2011
4.2
Steady-State
Steady-State
RθJA
RθJC
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W
2.7
TJ, TSTG
Symbol
t ≤ 10s
W
14
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
35
PD
TC=100°C
-55 to 150
Typ
25
55
2.6
°C
Max
30
65
3.5
Units
°C/W
°C/W
°C/W
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AON6202
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
150
TJ=55°C
µA
5
VDS=0V, VGS= ±20V
100
VGS=10V, ID=20A
1.8
2.3
4.5
5.5
7
8.5
VGS=4.5V, ID=15A
5.8
7.5
VDS=5V, ID=20A
66
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
nA
V
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
40
A
2200
pF
1450
1840
500
720
940
pF
38
63
110
pF
0.3
0.7
1.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
21
27
33
nC
Qg(4.5V) Total Gate Charge
10
12
15
nC
3
4.2
5
nC
4.2
6
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
2.5
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
6.5
ns
7
ns
21
ns
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12
15
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
25
32
38
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : March 2011
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Page 2 of 6
AON6202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
6V
VDS=5V
3.5V
80
80
7V
60
ID(A)
ID (A)
60
40
40
3V
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
2
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
2
8
RDS(ON) (mΩ )
1.5
VGS=4.5V
6
4
VGS=10V
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=4.5V10
1.4
1.2
ID=15A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
15
1.0E+02
ID=20A
1.0E+01
12
40
125°C
9
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
1.0E-01
1.0E-02
6
25°C
1.0E-03
3
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : March 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=20A
2500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
RDS(ON)
limited
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
160
10µs
Power (W)
10µs
100.0
10.0
5
30
200
1000.0
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
Coss
1000
500
0
ID (Amps)
2000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : March 2011
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Page 4 of 6
AON6202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
TA=25°C
TA=100°C
100
TA=125°C
TA=150°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
10
30
20
10
0
1
10
100
1000
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
125
150
10000
30
TA=25°C
25
1000
20
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
15
10
17
5
2
10
100
10
5
1
0
0.00001
0
25
50
75
100
125
Zθ JA Normalized Transient
Thermal Resistance
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
150
40
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : March 2011
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Page 5 of 6
AON6202
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1 : March 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6