AON6202 30V N-Channel MOSFET General Description Product Summary The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 30V 24A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.5mΩ RDS(ON) (at VGS = 4.5V) < 7.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 150 21 IDSM TA=70°C ±20 19 IDM TA=25°C Units V 24 ID TC=100°C Maximum 30 A 17 Avalanche Current C IAS, IAR 38 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 72 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1 : March 2011 4.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2.7 TJ, TSTG Symbol t ≤ 10s W 14 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 35 PD TC=100°C -55 to 150 Typ 25 55 2.6 °C Max 30 65 3.5 Units °C/W °C/W °C/W Page 1 of 6 AON6202 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 150 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 1.8 2.3 4.5 5.5 7 8.5 VGS=4.5V, ID=15A 5.8 7.5 VDS=5V, ID=20A 66 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance nA V A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 40 A 2200 pF 1450 1840 500 720 940 pF 38 63 110 pF 0.3 0.7 1.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 27 33 nC Qg(4.5V) Total Gate Charge 10 12 15 nC 3 4.2 5 nC 4.2 6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 2.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 7 ns 21 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 15 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 25 32 38 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : March 2011 www.aosmd.com Page 2 of 6 AON6202 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 6V VDS=5V 3.5V 80 80 7V 60 ID(A) ID (A) 60 40 40 3V 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 2 8 RDS(ON) (mΩ ) 1.5 VGS=4.5V 6 4 VGS=10V 2 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=15A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 125°C 9 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 1.0E-01 1.0E-02 6 25°C 1.0E-03 3 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1 : March 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6202 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=20A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1500 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 160 10µs Power (W) 10µs 100.0 10.0 5 30 200 1000.0 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance Coss 1000 500 0 ID (Amps) 2000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1 : March 2011 www.aosmd.com Page 4 of 6 AON6202 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C TA=100°C 100 TA=125°C TA=150°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 10 30 20 10 0 1 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 125 150 10000 30 TA=25°C 25 1000 20 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 15 10 17 5 2 10 100 10 5 1 0 0.00001 0 25 50 75 100 125 Zθ JA Normalized Transient Thermal Resistance 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 150 40 RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1 : March 2011 www.aosmd.com Page 5 of 6 AON6202 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1 : March 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6