AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 60V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 2.4mΩ RDS(ON) (at VGS=4.5V) < 3.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 340 41 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C Maximum 60 A 33 Avalanche Current C IAS 65 A Avalanche energy L=0.1mH C TC=25°C EAS 211 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev.1.0: July 2013 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 41.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 104 PD -55 to 150 Typ 14 40 1 www.aosmd.com °C Max 17 55 1.2 Units °C/W °C/W °C/W Page 1 of 6 AON6260 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=4.5V, ID=20A 2.8 3.5 mΩ 105 0.7 1 V 85 A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=30V, ID=20A 0.3 mΩ S 5578 VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) V 2.4 Forward Transconductance Gate resistance nA 2.5 3.9 VSD Rg ±100 1.95 gFS Reverse Transfer Capacitance 2.0 3.15 TJ=125°C VDS=5V, ID=20A Crss µA 5 1.5 Units V 1 VGS=10V, ID=20A Output Capacitance Max 60 VDS=60V, VGS=0V IDSS Coss Typ pF 1390 pF 75 pF 0.75 1.2 Ω 81 115 nC 37 52 nC 17 nC Gate Drain Charge 12 nC Turn-On DelayTime 13.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 8 ns 50 ns tf Turn-Off Fall Time 11.5 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 30 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 130 ns nC VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2013 www.aosmd.com Page 2 of 6 AON6260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 3.5V 4.5V 80 80 10V 60 ID(A) ID (A) 60 40 40 VGS=3.0V 20 125°C 20 25°C 0 0 0 1 2 3 4 1 5 6 3 4 5 2 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS=4.5V 2 VGS=10V 1.8 VGS=10V ID=20A 1.6 17 5 2 10 VGS=4.5V 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 6 1.0E+02 ID=20A 1.0E+01 40 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 4 2 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: July 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 VDS=30V ID=20A Ciss 6000 Capacitance (pF) VGS (Volts) 8 6 4 5000 4000 3000 Coss 2000 2 Crss 1000 0 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics 80 90 0 RDS(ON) limited 100µs 1ms 10ms 10.0 1.0 DC TJ(Max)=150°C TC=25°C 0.1 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 VGS > or equal to 4.5V 10 0 18 Pulse Width (s) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 60 TJ(Max)=150°C TC=25°C 400 10µs 10µs Power (W) ID (Amps) 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 100.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.2°C/W 1 PD 0.1 Ton T Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2013 www.aosmd.com Page 4 of 6 AON6260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=100°C TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 TA=150°C TA=125°C 10 100 60 40 20 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 100 TA=25°C 80 1000 Power (W) Current rating ID(A) 80 60 40 17 5 2 10 100 10 20 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 150 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2013 www.aosmd.com Page 5 of 6 AON6260 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: July 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6