Datasheet

AON6232
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6232 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
ID (at VGS=10V)
40V
85A
RDS(ON) (at VGS=10V)
< 2.5mΩ
RDS(ON) (at VGS = 4.5V)
< 3.6mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
A
260
22
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Units
V
85
ID
TC=100°C
C
Maximum
40
A
17
Avalanche Current C
IAS, IAR
60
A
Avalanche energy L=0.1mH C
EAS, EAR
180
mJ
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: August 2011
2.3
Steady-State
Steady-State
RθJA
RθJC
www.aosmd.com
W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
14
40
1.1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6232
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=40V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
260
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
5
IGSS
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VGS(th)
RDS(ON)
Typ
100
nA
1.8
2.3
V
2.05
2.5
3.2
3.9
2.8
3.6
mΩ
1
V
85
A
A
100
0.68
mΩ
S
2530
3165
3800
pF
VGS=0V, VDS=20V, f=1MHz
630
905
1180
pF
15
52.5
90
pF
VGS=0V, VDS=0V, f=1MHz
0.4
0.85
1.3
Ω
VGS=10V, VDS=20V, ID=20A
33
42
51
nC
12
18.2
24
nC
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
9.6
nC
2.8
nC
8.7
ns
4.5
ns
33.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
15
22.5
30
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
41
59
77
6.2
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2011
www.aosmd.com
Page 2 of 6
AON6232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
4.5V
VDS=5V
3.5V
6V
100
80
80
ID(A)
ID (A)
60
60
125°C
40
40
VGS=3V
20
20
25°C
0
0
0
1
2
3
4
0
5
6
2
3
4
5
6
1.8
4
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
2
VGS=10V
VGS=10V
ID=20A
1.6
1.4
17
5
2
10
VGS=4.5V
1.2
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
8
ID=20A
1.0E+01
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
6
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
2
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: August 2011
4
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=20V
ID=20A
3500
8
Capacitance (pF)
VGS (Volts)
3000
6
4
Ciss
2500
2000
Coss
1500
1000
2
Crss
500
0
0
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
45
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
200
1000.0
RDS(ON)
100.0
TJ(Max)=150°C
TC=25°C
160
10µs
10.0
DC
1.0
100µs
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
10µs
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2011
www.aosmd.com
Page 4 of 6
AON6232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
100
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
TA=125°C
10
1
60
40
20
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
100
TA=25°C
80
1000
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2011
www.aosmd.com
Page 5 of 6
AON6232
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: August 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6