AON6226 100V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) VDS Applications 100V 48A RDS(ON) (at VGS=10V) < 7.9mΩ RDS(ON) (at VGS=4.5V) < 10.2mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification for AC/DC Quick Charger D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6226 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: March 2016 IAS 33 A EAS 54 mJ VSPIKE 120 V 108 Steady-State Steady-State W 43 5.0 RθJA RθJC W 3.2 TJ, TSTG Symbol t ≤ 10s A 14 PDSM Junction and Storage Temperature Range A 17.5 PD TA=25°C V 48 IDSM TA=70°C ±20 140 IDM TA=25°C Units V 48 ID TC=100°C Maximum 100 -55 to 150 Typ 20 45 0.9 www.aosmd.com Max 25 55 1.15 °C Units °C/W °C/W °C/W Page 1 of 6 AON6226 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 1.75 2.3 V 6.4 7.9 11.7 14.4 10.2 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 7.6 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=50V, ID=20A µA 5 1.3 0.7 Units V VDS=100V, VGS=0V IDSS Max mΩ mΩ S 1 V 48 A 3130 pF 245 pF 12.5 pF 1.4 2.1 Ω 42 60 nC 18.5 28 nC 7.5 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 8 ns 5 ns 41 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 7 ns IF=20A, di/dt=500A/µs 30 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 150 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2016 www.aosmd.com Page 2 of 6 AON6226 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 3.5V 80 VDS=5V 80 4V 4.5V 60 60 ID (A) ID (A) 3.0V 40 40 20 20 125°C 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 10 2.2 9 2 Normalized On-Resistance RDS(ON) (mΩ) 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) VGS=4.5V 8 2 7 6 VGS=10V 5 VGS=10V ID=20A 1.8 1.6 1.4 VGS=4.5V ID=20A 1.2 1 0.8 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+01 ID=20A 1.0E+00 1.0E-01 125°C 15 IS (A) RDS(ON) (mΩ) 20 125°C 1.0E-02 10 1.0E-03 5 25°C 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: March 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6226 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=50V ID=20A 3500 Ciss 8 Capacitance (pF) VGS (Volts) 3000 6 4 2 2500 2000 1500 1000 500 0 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 40 60 80 100 500 TJ(Max)=150°C TC=25°C 10µs 100.0 400 1.0 DC Power (W) 10µs RDS(ON) limited 10.0 0.1 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Coss Crss 100µs 1ms 10ms 0.1 200 100 TJ(Max)=150°C TC=25°C 0.0 0.01 300 1 10 VDS (Volts) 100 1000 0 0.0001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.15°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: March 2016 www.aosmd.com Page 4 of 6 AON6226 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 60 Power Dissipation (W) 120 50 Current rating ID (A) 100 80 60 40 40 30 20 10 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: March 2016 www.aosmd.com Page 5 of 6 AON6226 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: March 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6