Datasheet

AON6226
100V N-Channel AlphaSGT TM
General Description
Product Summary
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
ID (at VGS=10V)
VDS
Applications
100V
48A
RDS(ON) (at VGS=10V)
< 7.9mΩ
RDS(ON) (at VGS=4.5V)
< 10.2mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification for AC/DC Quick Charger
D
DFN5x6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
PIN1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6226
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: March 2016
IAS
33
A
EAS
54
mJ
VSPIKE
120
V
108
Steady-State
Steady-State
W
43
5.0
RθJA
RθJC
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
A
14
PDSM
Junction and Storage Temperature Range
A
17.5
PD
TA=25°C
V
48
IDSM
TA=70°C
±20
140
IDM
TA=25°C
Units
V
48
ID
TC=100°C
Maximum
100
-55 to 150
Typ
20
45
0.9
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Max
25
55
1.15
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6226
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
VGS=10V, ID=20A
±100
nA
1.75
2.3
V
6.4
7.9
11.7
14.4
10.2
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
7.6
gFS
Forward Transconductance
VDS=5V, ID=20A
90
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=50V, ID=20A
µA
5
1.3
0.7
Units
V
VDS=100V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
48
A
3130
pF
245
pF
12.5
pF
1.4
2.1
Ω
42
60
nC
18.5
28
nC
7.5
nC
Gate Drain Charge
4.5
nC
Turn-On DelayTime
8
ns
5
ns
41
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
7
ns
IF=20A, di/dt=500A/µs
30
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
150
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2016
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Page 2 of 6
AON6226
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
3.5V
80
VDS=5V
80
4V
4.5V
60
60
ID (A)
ID (A)
3.0V
40
40
20
20
125°C
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
10
2.2
9
2
Normalized On-Resistance
RDS(ON) (mΩ)
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=4.5V
8
2
7
6
VGS=10V
5
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=4.5V
ID=20A
1.2
1
0.8
4
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
1.0E+01
ID=20A
1.0E+00
1.0E-01
125°C
15
IS (A)
RDS(ON) (mΩ)
20
125°C
1.0E-02
10
1.0E-03
5
25°C
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: March 2016
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AON6226
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=50V
ID=20A
3500
Ciss
8
Capacitance (pF)
VGS (Volts)
3000
6
4
2
2500
2000
1500
1000
500
0
0
0
10
20
30
40
50
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
60
80
100
500
TJ(Max)=150°C
TC=25°C
10µs
100.0
400
1.0
DC
Power (W)
10µs
RDS(ON)
limited
10.0
0.1
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
ID (Amps)
Coss
Crss
100µs
1ms
10ms
0.1
200
100
TJ(Max)=150°C
TC=25°C
0.0
0.01
300
1
10
VDS (Volts)
100
1000
0
0.0001
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.15°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: March 2016
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Page 4 of 6
AON6226
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
60
Power Dissipation (W)
120
50
Current rating ID (A)
100
80
60
40
40
30
20
10
20
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: March 2016
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Page 5 of 6
AON6226
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: March 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6