技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-level-applications • Solarapplications 电气特性 • 高速IGBTH3 • 低电感设计 • 低开关损耗 • 低VCEsat ElectricalFeatures • HighspeedIGBTH3 • Lowinductivedesign • Lowswitchinglosses • LowVCEsat 机械特性 • 3kV交流1分钟绝缘 • 低热阻的三氧化二铝（Al2O3衬底 • 紧凑型设计 • PressFIT压接技术 • 集成的安装夹使安装坚固 MechanicalFeatures • 3kVAC1mininsulation • Al2O3substratewithlowthermalresistance • Compactdesign • PressFITcontacttechnology • Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 IGBT,T1-T4/IGBT,T1-T4 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C 集电极电流 Implementedcollectorcurrent VCES 1200 V ICN 75 A 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 30 45 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 275 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,45 1,55 1,60 1,70 V V V 5,80 6,50 V 栅极阈值电压 Gatethresholdvoltage IC = 2,60 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,57 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 4,40 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,235 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGon = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGon = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGoff = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGoff = 6,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 30 A, VCE = 400 V, LS = 40 nH Tvj = 25°C VGE = 15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 6,8 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,00 0,03 0,03 0,03 µs µs µs 0,01 0,012 0,012 µs µs µs 0,25 0,32 0,34 µs µs µs 0,025 0,04 0,045 µs µs µs Eon 0,40 0,60 0,70 mJ mJ mJ IC = 30 A, VCE = 400 V, LS = 40 nH Tvj = 25°C VGE = 15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 6,8 Ω Tvj = 150°C Eoff 1,05 1,60 1,75 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 270 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJC 2 0,500 0,550 K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions 0,450 Tvj op -40 K/W 150 °C 二极管,D1/D4/Diode,D1/D4 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 1200 V IF 30 A IFRM 50 A I²t 90,0 75,0 特征值/CharacteristicValues min. A²s A²s typ. max. 2,40 VF 1,85 1,90 1,90 Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 72,0 80,0 82,0 A A A IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 400 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 2,35 2,85 3,70 µC µC µC IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 400 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,80 1,30 1,35 mJ mJ mJ 正向电压 Forwardvoltage IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 400 V VGE = -15 V 恢复电荷 Recoveredcharge 反向恢复损耗（每脉冲） Reverserecoveryenergy V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,950 1,05 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,850 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 3 -40 K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 IGBT,T2/T3/IGBT,T2/T3 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 650 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 30 45 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 60 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 150 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,55 1,70 1,80 2,00 V V V 5,80 6,50 V 栅极阈值电压 Gatethresholdvoltage IC = 0,30 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,30 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,65 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,051 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGon = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGon = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGoff = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 30 A, VCE = 400 V VGE = 15 V RGoff = 10 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 30 A, VCE = 400 V, LS = 40 nH Tvj = 25°C VGE = 15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 10 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 4,90 0,022 0,025 0,025 µs µs µs 0,01 0,012 0,012 µs µs µs 0,16 0,18 0,185 µs µs µs 0,025 0,037 0,04 µs µs µs Eon 0,34 0,50 0,53 mJ mJ mJ IC = 30 A, VCE = 400 V, LS = 40 nH Tvj = 25°C VGE = 15 V, du/dt = 4700 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 10 Ω Tvj = 150°C Eoff 0,85 1,15 1,20 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 210 150 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,900 1,00 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,850 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C td on tr td off tf Tvj op preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 4 -40 K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 二极管,D2/D3/Diode,D2/D3 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 30 A IFRM 60 A I²t 130 115 特征值/CharacteristicValues min. A²s A²s typ. max. 1,65 VF 1,45 1,35 1,30 Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 42,0 48,0 50,0 A A A IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 400 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 1,80 2,40 2,60 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 400 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,45 0,65 0,73 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,00 1,20 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,700 K/W 正向电压 Forwardvoltage IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) VR = 400 V 恢复电荷 Recoveredcharge 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 V V V °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 5 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) AI2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm > 200 相对电痕指数 Comperativetrackingindex VISOL CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature nH RCC'+EE' RAA'+CC' 5,00 6,00 mΩ Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 重量 Weight G dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 6 max. 30 -40 preparedby:CM typ. LsCE Tstg Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. kV 3,0 24 125 °C 80 N g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 输出特性IGBT,T1-T4（典型) outputcharacteristicIGBT,T1-T4(typical) IC=f(VCE) VGE=15V 输出特性IGBT,T1-T4（典型) outputcharacteristicIGBT,T1-T4(typical) IC=f(VCE) Tvj=150°C 60 60 50 50 40 40 IC [A] IC [A] Tvj = 25°C Tvj = 125°C Tvj = 150°C 30 30 20 20 10 10 0 0,0 0,5 1,0 1,5 2,0 0 2,5 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 0,5 1,0 VCE [V] 传输特性IGBT,T1-T4(典型) transfercharacteristicIGBT,T1-T4(typical) IC=f(VGE) VCE=20V 2,5 3,0 50 60 3,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 50 2,5 40 2,0 E [mJ] IC [A] 2,0 开关损耗IGBT,T1-T4（典型) switchinglossesIGBT,T1-T4(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=6.8Ω,RGoff=6.8Ω,VCE=400V 60 30 1,0 10 0,5 5 6 7 8 9 0,0 10 VGE [V] preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 7 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 1,5 20 0 1,5 VCE [V] 0 10 20 30 IC [A] 40 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 开关损耗IGBT,T1-T4（典型) switchinglossesIGBT,T1-T4(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=30A,VCE=400V 瞬态热阻抗IGBT,T1-T4 transientthermalimpedanceIGBT,T1-T4 ZthJH=f(t) 4,0 10 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C ZthJH : IGBT ZthJH [K/W] E [mJ] 3,0 2,0 1 1,0 i: 1 2 3 4 ri[K/W]: 0,032 0,062 0,312 0,543 τi[s]: 0,0005 0,005 0,05 0,2 0,0 0 10 20 30 40 RG [Ω] 50 60 0,1 0,001 70 反偏安全工作区IGBT,T1-T4（RBSOA） reversebiassafeoperatingareaIGBT,T1-T4(RBSOA) IC=f(VCE) VGE=±15V,RGoff=6.8Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,D1/D4（典型) forwardcharacteristicofDiode,D1/D4(typical) IF=f(VF) 70 50 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C Tvj = 150°C 45 60 40 50 35 30 IF [A] IC [A] 40 30 25 20 15 20 10 10 5 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 8 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 开关损耗二极管,D1/D4（典型) switchinglossesDiode,D1/D4(typical) Erec=f(IF) RGon=10Ω,VCE=400V 开关损耗二极管,D1/D4（典型) switchinglossesDiode,D1/D4(typical) Erec=f(RG) IF=30A,VCE=400V 2,0 1,6 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,8 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,4 1,6 1,2 1,4 1,0 E [mJ] E [mJ] 1,2 1,0 0,8 0,8 0,6 0,6 0,4 0,4 0,2 0,2 0,0 0 5 0,0 10 15 20 25 30 35 40 45 50 55 60 IF [A] 瞬态热阻抗二极管,D1/D4 transientthermalimpedanceDiode,D1/D4 ZthJH=f(t) 0 10 20 30 40 50 60 RG [Ω] 70 80 90 100 输出特性IGBT,T2/T3（典型) outputcharacteristicIGBT,T2/T3(typical) IC=f(VCE) VGE=15V 10 60 ZthJH: Diode Tvj = 25°C Tvj = 125°C Tvj = 150°C 54 48 42 IC [A] ZthJH [K/W] 36 1 30 24 18 12 i: 1 2 3 4 ri[K/W]: 0,15 0,323 0,739 0,588 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 6 0 10 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 9 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 输出特性IGBT,T2/T3（典型) outputcharacteristicIGBT,T2/T3(typical) IC=f(VCE) Tvj=150°C 传输特性IGBT,T2/T3(典型) transfercharacteristicIGBT,T2/T3(typical) IC=f(VGE) VCE=20V 60 60 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 54 48 42 42 36 36 IC [A] IC [A] 48 30 30 24 24 18 18 12 12 6 6 0 0,0 0,5 1,0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 54 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 0 5,0 开关损耗IGBT,T2/T3（典型) switchinglossesIGBT,T2/T3(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=10Ω,RGoff=10Ω,VCE=400V 5 6 7 8 9 VGE [V] 10 11 12 开关损耗IGBT,T2/T3（典型) switchinglossesIGBT,T2/T3(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=30A,VCE=400V 2,5 4,0 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 3,5 2,0 3,0 2,5 E [mJ] E [mJ] 1,5 1,0 2,0 1,5 1,0 0,5 0,5 0,0 0 10 20 30 IC [A] 40 50 0,0 60 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 10 0 10 20 30 40 50 60 RG [Ω] 70 80 90 100 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 瞬态热阻抗IGBT,T2/T3 transientthermalimpedanceIGBT,T2/T3 ZthJH=f(t) 反偏安全工作区IGBT,T2/T3（RBSOA） reversebiassafeoperatingareaIGBT,T2/T3(RBSOA) IC=f(VCE) VGE=±15V,RGoff=10Ω,Tvj=150°C 10 70 ZthJH: IGBT IC, Modul IC, Chip 60 40 IC [A] ZthJH [K/W] 50 1 30 20 10 i: 1 2 3 4 ri[K/W]: 0,142 0,309 0,719 0,58 τi[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 0 10 正向偏压特性二极管,D2/D3（典型) forwardcharacteristicofDiode,D2/D3(typical) IF=f(VF) 0 100 200 300 400 VCE [V] 500 600 700 开关损耗二极管,D2/D3（典型) switchinglossesDiode,D2/D3(typical) Erec=f(IF) RGon=6.8Ω,VCE=400V 60 1,00 Tvj = 25°C Tvj = 125°C Tvj = 150°C 55 Erec, Tvj = 125°C Erec, Tvj = 150°C 0,90 50 0,80 45 0,70 40 0,60 E [mJ] IF [A] 35 30 25 0,50 0,40 20 0,30 15 0,20 10 0,10 5 0 0,0 0,5 1,0 VF [V] 1,5 0,00 2,0 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 11 0 10 20 30 IF [A] 40 50 60 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 开关损耗二极管,D2/D3（典型) switchinglossesDiode,D2/D3(typical) Erec=f(RG) IF=30A,VCE=400V 瞬态热阻抗二极管,D2/D3 transientthermalimpedanceDiode,D2/D3 ZthJH=f(t) 0,90 10 Erec, Tvj = 125°C Erec, Tvj = 150°C 0,80 ZthJH: Diode 0,70 ZthJH [K/W] E [mJ] 0,60 0,50 0,40 1 0,30 0,20 i: 1 2 3 4 ri[K/W]: 0,25 0,3 0,5 0,65 τi[s]: 0,0005 0,005 0,05 0,2 0,10 0,00 0 10 20 30 RG [Ω] 40 50 0,1 0,001 60 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TNTC [°C] 120 140 160 preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 12 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 接线图/Circuitdiagram J 封装尺寸/Packageoutlines Infineon preparedby:CM dateofpublication:2016-04-04 approvedby:AKDA revision:V3.2 13 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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