技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 IHM-A模块采用第四代沟槽栅/场终止IGBT4和第三代发射极控制二极管 IHM-AmodulewithTrench/FieldstopIGBT4andEmitterControlled3diode VCES = 1700V IC nom = 800A / ICRM = 1600A 典型应用 • 大功率变流器 • 中压变流器 • 电机传动 • 牵引变流器 • 风力发电机 TypicalApplications • Highpowerconverters • Mediumvoltageconverters • Motordrives • Tractiondrives • Windturbines 电气特性 • 提高工作结温Tvjop • 低VCEsat • Tvjop=150°C • 增大的二极管针对反馈运行模式 ElectricalFeatures • ExtendedoperatingtemperatureTvjop • LowVCEsat • Tvjop=150°C • Enlargeddiodeforregenerativeoperation 机械特性 • 4kV交流1分钟绝缘 • 碳化硅铝（AlSiC）基板提供更高的温度循环能力 MechanicalFeatures • 4kVAC1mininsulation • AlSiC base plate for increased thermal cycling capability • Highpowerandthermalcyclingcapability • Highpowerdensity • Standardhousing • 高功率循环和温度循环能力 • 高功率密度 • 标准封装 ModuleLabelCode BarcodeCode128 DMX-Code preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1700 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 800 1200 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1600 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 4,85 kW VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,80 2,10 2,20 2,20 2,60 2,70 V V V 5,80 6,40 V 栅极阈值电压 Gatethresholdvoltage IC = 32,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 8,30 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,9 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 65,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 2,10 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 0,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 0,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 1,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 800 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGon = 0,8 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,20 0,59 0,63 0,64 µs µs µs 0,14 0,16 0,16 µs µs µs 1,00 1,15 1,15 µs µs µs 0,32 0,50 0,55 µs µs µs Eon 145 215 245 mJ mJ mJ IC = 800 A, VCE = 900 V, LS = 50 nH Tvj = 25°C VGE = ±15 V, du/dt = 3300 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,8 Ω Tvj = 150°C Eoff 255 330 365 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 3400 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 10 µs, Tvj = 150°C td on tr td off tf Tvj op preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 2 25,7 K/kW 22,8 -40 K/kW 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 最大损耗功率 Maximumpowerdissipation Tvj = 125°C 最小开通时间 Minimumturn-ontime VRRM 1700 V IF 800 A IFRM 1600 A I²t 240 210 PRQM 1200 kW ton min 10,0 µs 特征值/CharacteristicValues min. kA²s kA²s typ. max. VF 1,55 1,60 1,65 2,00 2,05 2,10 IF = 800 A, - diF/dt = 5600 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 1000 1150 1200 A A A 恢复电荷 Recoveredcharge IF = 800 A, - diF/dt = 5600 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 240 410 450 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 800 A, - diF/dt = 5600 A/µs (Tvj=150°C) Tvj = 25°C VR = 900 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 160 280 325 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 正向电压 Forwardvoltage IF = 800 A, VGE = 0 V IF = 800 A, VGE = 0 V IF = 800 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 3 V V V 36,8 K/kW 30,0 -40 K/kW 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 模块基板材料 Materialofmodulebaseplate kV 4,0 AlSiC 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) AlN 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 15,0 15,0 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 10,0 mm > 250 相对电痕指数 Comperativetrackingindex CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 20 nH RCC'+EE' 0,33 mΩ Tstg -40 125 °C 4,25 5,75 Nm 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 端子联接扭距 Terminalconnectiontorque 螺丝M4根据相应的应用手册进行安装 ScrewM4-Mountingaccordingtovalidapplicationnote 螺丝M8根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M G preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 4 max. LsCE 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight typ. 1,8 - 2,1 Nm 8,0 - 10 Nm 1050 g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器（典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 1600 1600 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1400 1400 1000 1000 IC [A] 1200 IC [A] 1200 800 800 600 600 400 400 200 200 0 0,0 0,5 VGE = 20 V VGE = 15 V VGE = 12 V VGE = 10 V VGE = 9 V VGE = 8 V 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=0.8Ω,RGoff=1.8Ω,VCE=900V 1600 800 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1400 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 750 700 650 1200 600 550 500 E [mJ] IC [A] 1000 800 600 450 400 350 300 250 400 200 150 200 100 50 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 5 0 200 400 600 800 1000 1200 1400 1600 IC [A] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 开关损耗IGBT,逆变器（典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=800A,VCE=900V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 1100 100 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 1000 ZthJC : IGBT 900 800 10 ZthJC [K/kW] E [mJ] 700 600 500 1 400 300 i: 1 2 3 4 ri[K/kW]: 4,219 15,08 4,624 1,783 τi[s]: 0,002 0,045 0,539 6,941 200 100 0,1 0,001 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 RG [Ω] 反偏安全工作区IGBT,逆变器（RBSOA） reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.8Ω,Tvj=150°C 0,1 t [s] 1 10 栅极电荷特性IGBT,逆变器（典型) gatechargecharacteristicIGBT,Inverter(typical) VGE=f(QG) IC=800A,Tvj=25°C 2000 15 IC, Modul IC, Chip 1800 VCC = 900 V 13 11 1600 9 7 1400 5 3 IC [A] VGE [V] 1200 1000 800 1 -1 -3 -5 600 -7 400 -9 -11 200 0 0,01 -13 0 200 400 600 -15 800 1000 1200 1400 1600 1800 VCE [V] preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 6 0 1 2 3 4 5 QG [µC] 6 7 8 9 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 正向偏压特性二极管,逆变器（典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.8Ω,VCE=900V 1600 450 Tvj = 25°C Tvj = 125°C Tvj = 150°C 1400 Erec, Tvj = 125°C Erec, Tvj = 150°C 400 1000 300 E [mJ] 350 IF [A] 1200 800 250 600 200 400 150 200 100 0 50 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 开关损耗二极管,逆变器（典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=800A,VCE=900V 0 200 400 600 800 1000 1200 1400 1600 IF [A] 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 350 100 Erec, Tvj = 125°C Erec, Tvj = 150°C ZthJC : Diode 300 E [mJ] ZthJC [K/kW] 250 200 10 150 i: 1 2 3 4 ri[K/kW]: 6,699 22,012 6,296 1,796 τi[s]: 0,002 0,05 0,427 7,014 100 0 1 2 3 4 RG [Ω] 5 6 7 1 0,001 8 preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 7 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 安全工作区二极管,逆变器(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=150°C 1800 IR, Modul 1600 1400 1200 IR [A] 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 VR [V] preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 8 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 接线图/Circuitdiagram 封装尺寸/Packageoutlines preparedby:WB dateofpublication:2016-03-09 approvedby:IB revision:V3.1 9 技术信息/TechnicalInformation IGBT-模块 IGBT-Module FF800R17KP4_B2 Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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