Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm 4.5±0.15 3.5±0.15 Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.) 12.8 min. High-power output, high-efficiency : PO = 12 mW (typ.) 2.1±0.15 1.6±0.15 0.8±0.1 (2.95) 3.9±0.25 Features Not soldered 0.8 max. 1.5±0.2 For optical control systems 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 170 mW Forward current (DC) IF 100 mA Pulse forward current IFP * 2 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min max Unit Radiant power PO IF = 100mA Peak emission wavelength λP IF = 100mA Spectral half band width ∆λ IF = 100mA 70 Forward voltage (DC) VF IF = 100mA 1.4 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 IF = 100mA 700 ns The angle in which radiant intencity is 50% 120 deg. Response time Half-power angle tr , t f θ 7 typ 12 mW 900 nm nm 1.7 V 10 µA pF 1 Infrared Light Emitting Diodes LN175 IF — Ta IFP — Duty cycle 10 2 60 40 tw = 10µs Ta = 25˚C IFP (A) 80 10 1 10 –1 tw = 10µs f = 100Hz Ta = 25˚C 1 10 –1 20 0 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) 1 VF (V) 10 IF = 100mA 1.2 10mA (1) Forward voltage 10 (2) 3 4 5 ∆PO — Ta VF — Ta 10 2 2 Forward voltage VF (V) 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Duty cycle (%) ∆PO — IFP 10 3 10 –2 10 2 10 1mA 0.8 0.4 Relative radiant power ∆PO 0 – 25 Relative radiant power ∆PO IFP — VF 10 Pulse forward current IFP (A) 100 Pulse forward current Allowable forward current IF (mA) 120 IF = 100mA 1 10 –1 10 –2 10 –1 1 0 – 40 10 Pulse forward current IFP (A) λP — Ta 960 0 40 Relative radiant intensity (%) Peak emission wavelength λP (nm) 900 880 10 –1 – 40 0 40 80 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 100mA Ta = 25˚C IF = 100mA 920 120 Ambient temperature Ta (˚C ) 100 940 80 150 80 100 60 50 10˚ Relative radiant intensity(%) 10 –2 10 –3 20˚ 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 40 100˚ 110˚ 20 120˚ 130˚ 860 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 780 820 860 900 940 Wavelength λ (nm) 980 1020