参数符号汇总.pdf

Diode
普通二极管 (Diode)
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
反向重复峰值电压
VRWM
Working peak reverse voltage
反向工作峰值电压
VR
DC blocking voltage
反向直流电压
VR(RMS)
RMS reverse voltage
反向电压有效值
Average rectified output current
平均整流输出电流
Average forward current
正向平均电流
Reverse current
反向电流
IFSM
Non-repetitive peak forward surge current
正向浪涌电流
V(BR)
Reverse breakdown voltage
击穿电压
VF
Forward voltage
正向直流电压
CJ
Junction capacitance
结电容
PD
Power dissipation
耗散功率
Tj
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
RθJA
Thermal resistance from junction to ambient
结到环境的热阻
IO
IF(AV)
IR
Pin 二极管 (Pin Diode)
Symbol
Parameter
VR
Continuous reverse voltage
反向直流电压
IF
Continuous forward current
正向直流电流
VF
Forward voltage
正向电压
IR
Reverse current
反向电流
Cd
Diode capacitance
二极管电容
rd
Diode forward resistance
二极管正向电阻
Ptot
Total power dissipation
总的功率损耗
RθJA
Thermal resistance from junction to ambient
结到环境的热阻
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
TL
Maximum lead solder temperature
最大引脚焊接温度
ESD voltage
静电电压
Tj
VESD
TVS 二极管 (TVS Diode)
Symbol
Parameter
IPP
Peak pulse current
峰值脉冲电流
PPP
Peak pulse power
峰值脉冲功率
VC
Clampling voltage
箝位电压
IR
Reverse leakage current
反向漏电流
V(BR)
Breakdown voltage
击穿电压
VRWM
Working peak reverse voltage
反向工作峰值电压
VF
Forward voltage
正向电压
IF
Forward current
正向电流
IT
Test current
测试电流
CJ
Junction capacitance
结电容
Tj
Junction temperature
结温
Storage temperature range
存储温度范围
Tstg
稳压二极管(Zener Diode)
VZ
Zener voltage
稳压值
IZT
Working current
工作电流
IZK
Inflection point current
拐点电流
ZZT
Working impedance
工作阻抗
ZZK
Inflection point impedance
拐点阻抗
VR
Reverse voltage
反向电压
IR
Reverse current
反向电流
VF
Forward voltage
正向电压
IF
Forward current
正向电流
Pd
Power dissipation
功率损耗
Tj
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
RθJA
Thermal resistance from junction to ambient
结到环境的热阻
晶闸管(Thyristor)
Symbol
Parameter
VDRM
Peak repetitive off-state voltage
断态重复峰值电压
VRRM
Peak repetitive reverse voltage
反向重复峰值电压
IT(RMS)
RMS on-state current
额定通态电流
ITSM
Non-repetitive surge peak on-state current
通态非重复浪涌电流
IGM
Forward peak gate current
控制极重复峰值电流
VTM
Peak forward on-state voltage
通态峰值电压
IGT
Gate trigger current
控制极触发直流电流
VGT
Gate trigger voltage
控制极触发电压
Holding current
维持电流
IDRM
Peak repetitive off-state current
断态重复峰值电流
IRRM
Peak repetitive reverse current
反向重复峰值电流
PG(AV)
Average gate power dissipation
控制极平均功率
Junction temperature
结温
Storage temperature range
存储温度范围
IH
Tj
Tstg
78/79 系列稳压管 (Three Terminal Voltage Regulator)
Symbol
Parameter
VI
Input voltage
输入电压
Vo
Output voltage
输出电压
ΔVo
Load regulation
负载调整率
ΔVo
Line regulation
线性调整率
Quiescent current
静态电流
ΔIq
Quiescent current change
静态电流变化量
VN
Output noise voltage
输出噪声电压
RR
Ripple rejection
纹波抑制比
Vd
Dropout voltage
跌落电压
Isc
Short circuit current
短路电流
Ipk
Peak current
峰值电流
Topr
Operating junction temperature range
工作结温范围
Tstg
Storage temperature range
存储温度范围
RθJA
Thermal resistance from junction to ambient
结到环境的热阻
Iq
431 系列稳压管 (Adjustable Shunt Regulator)
Symbol
VKA
Parameter
Cathode voltage
阴极电压
IK
Cathode current range(continous)
阴极电流
Iref
Reference input current range,continous
基准输入电流
PD
Power dissipation
耗散功率
RθJA
Thermal resistance from junction to ambient
结到环境的热阻
Topr
Operating junction temperature range
工作结温范围
Tstg
Storage temperature range
存储温度范围
Vref
Reference input voltage
基准输入电压
Deviation of reference input voltage over full
全温度范围内基准输入电
temperature range
压的偏差
Ratio of change in reference input voltage to the change
基准输入电压变化量与阴
in cathode voltage
极电压变化量的比
Deviation of reference input current over full
全温度范围内基准输入电
temperature range
流的偏差
Imin
Minimum cathode current for regulation
稳压时最小负极电流
Ioff
Off-state cathode current
关断状态阴极电流
Dynamic impedance
动态阻抗
ΔVref(dev)
ΔVref/ΔVKA
ΔIref(dev)
|ZKA|
1117 系列稳压管 (Low Dropout Linear Regulator)
Symbol
Parameter
VIN
Input voltage
输入电压
IO
Output current
输出电流
TJ
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
VESD
ESD voltage
静电电压
TOPR
Operating junction temperature
工作结温范围
Vref
Reference voltage
基准输出电压值
VO
Output voltage
输出电压
LNR
Line regulation
线性调整率
LDR
Load regulation
负载调整率
VD
Dropout voltage
跌落电压
Ilimit
Current limit
维持电压调整的最小负载电流
Iadj
Adjust pin current
调整端电流
IO(min)
Minimum load Current
最小负载电流
Iq
Quiescent current
静态电流
RR
Ripple rejection
纹波抑制比
Temperature stability
温度稳定性
Long-term stability
长期稳定性
RMS output noise (% of VOUT)
RMS 输出噪声
Thermal resistance, junction to case
热阻
Thermal shutdown
热关断
Thermal shutdown hysteresis
热关断延迟
Thermal resistance from junction to ambient
结到环境的热阻
RθJA
317 系列稳压管 (Three-terminal Positive Voltage Regulator)
Symbol
VI-VO
Parameter
Input-output voltage differential
输入输出电压差
TL
Maximum lead solder temperature
最大引脚焊接温度
PD
Power dissipation
耗散功率
TJ
Junction temperature
结温
Topr
Operating junction temperature
工作结温
Tstg
Storage temperature
存储温度
VO
Reference voltage
基准输出电压
LNR
Line regulation
线性调整率
LDR
Load regulation
负载调整率
IADJ
Adjustable pin current
调整端电流
△IADJ
Adjustable pin current change
调整端电流变化量
IL(min)
Minimum load current to maintain regulation
维持电压调整的最小负载电流
IO(max)
Maximum output current
最大输出电流
Ripple rejection
纹波抑制比
RR
普通晶体管 (Transistor)
Symbol
Parameter
VCBO
Collector-base voltage
发射极开路,集电极-基极电压
VCEO
Collector-emitter voltage
基极开路,集电极-发射极电压
VEBO
Emitter-base voltage
集电极开路,发射极-基极电压
IC
Collector current
集电极电流
PC
Collector power dissipation
集电极耗散功率
TJ
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
V(BR)CBO
Collector-base breakdown voltage
发射极开路,集电极-基极反向电压
V(BR)CEO
Collector-emitter breakdown voltage
基极开路,集电极-发射极反向电压
V(BR)EBO
Emitter-base breakdown voltage
集电极开路,发射极-基极反向电压
ICBO
Collector cut-off current
发射极开路,集电极-基极截止电流
IEBO
Emitter cut-off current
集电极开路,发射极-基极截止电流
ICEO
Collector cut-off current
基极开路,集电极-发射极截止电流
hFE
DC current gain
共发射极正向电流传输比的静态值
VCE(sat)
Collector-emitter saturation voltage
集电极-发射极饱和电压
VBE(sat)
Base-emitter saturation voltage
基极-发射极饱和电压
VBE(on)
Base-emitter turn-on voltage
基极-发射开启电压
VBE
Base-emitter voltage
基极-发射极电压
fT
Transition frequency
特征频率
Cob
Collector output capacitance
共基极输出电容
Cib
Collector input capacitance
共基极输入电容
NF
Noise figure
噪声系数
ton
Turn-on time
开通时间
toff
Turn-off time
关断时间
tr
Rise time
上升时间
ts
Storage time
存储时间
tf
Fall time
下降时间
td
Delay time
延迟时间
数字晶体管 (Digital Transistor)
Symbol
Parameter
VCC
Supply voltage
电源电压
VIN
Input voltage
输入电压
IO
Output current
输出电流
PD
Power dissipation
损耗功率
VI(off)
Input-off voltage
输入截止电压
VI(on)
Input-on voltage
输入开启电压
VO(on)
Output voltage
输出电压
Input current
输入电流
Output current
输出截止电流
GI
DC current gain
直流增益
R1
Input resistance
输入电阻
R2/R1
Resistance ratio
电阻率
fT
Transition frequency
传输频率
TJ
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
VCBO
Collector-base voltage
发射极开路,集电极-基极反向电压
VCEO
Collector-emitter voltage
基极开路,集电极-发射极反向电压
VEBO
Emitter-base voltage
集电极开路,发射极-基极反向电压
II
IO(off)
MOS 管 (MOSFET)
Symbol
Parameter
VDS
Drain-source voltage
漏-源电压
VGS
Gate-source voltage
栅-源电压
EAS
Single pulse avalanche energy
单脉冲雪崩击穿能量
ID
Continuous drain current
漏极直流电流
IDM
Pulsed drain current
最大脉冲漏电流
PD
Power dissipation
耗散功率
Thermal resistance from junction to ambient
结到环境的热阻
TJ
Junction temperature
结温
Tstg
Storage temperature range
存储温度范围
TL
Maximum lead solder temperature
最大引脚焊接温度
Drain-source breakdown voltage
漏源击穿电压
Gate threshold voltage
栅源阈值电压
IGSS
Gate-body leakage current
漏-源短路的栅极电流
IDSS
Zero gate voltage drain curent
栅-源短路的漏极电流
RDS(on)
Drain-source on-resistance
漏源通态电阻
gfs
Forward transconductance
跨导
VSD
Diode forward voltage
体内反并联二极管正向压降
Ciss
Input capacitance
栅-源输入电容
Coss
Output capacitance
漏-源输出电容
Crss
Reverse transfer capacitance
反向传输电容
Rg
Gate resistance
栅极电阻
Turn-on delay time
开通延迟时间
Rise time
上升时间
Turn-off delay time
关断延迟时间
Fall time
下降时间
ID(on)
On-State drain current
通态漏极电流
IS
Diode forward current
体内反并联二极管正向电流
ISM
Pulse diode forward current
体内反并联二极管最大脉冲正向电流
trr
Diode reverse recovery time
体内反并联二极管反向恢复时间
Qrr
Diode reverse recovery charge
体内反并联二极管反向恢复电荷
ta
Diode Reverse Recovery Fall Time
体内反并联二极管反向恢复下降时间
tb
Diode Reverse Recovery Rise Time
体内反并联二极管反向恢复上升时间
RθJA
V(BR)DSS
V(GS)th
td(on)
tr
td(off)
tf