PIN Photodiodes PNZ300 (PN300), PNZ300F (PN300F) Silicon planar type φ4.6±0.15 PAZ300 For optical control systems 6.3±0.3 ■ Features 12.7 min. Glass lens • Fast response which is well suited to high speed modulated light detection • Wide spectral sensitivity • Low dark current and low noise • Good photo current linearity and wide dynamic sensitivity • Narrow directivity (PNZ300) • Wide derectivity (PNZ300F) 1. 2 0. 0± 0. 15 0± 1. ° 2 1 1: Anode 2: Cathode MTGLR102-001 Package φ5.75 max. PAZ300F φ4.6±0.15 Glass window Unit: mm Reverse voltage VR 50 V Power dissipation PD 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 4.5±0.2 Unit 12.7 min. Rating ±3 45° Symbol 2-φ0.45±0.05 2.54±0.25 ■ Absolute Maximum Ratings Ta = 25°C Parameter Unit: mm 2-φ0.45±0.05 2.45±0.25 .2 ±0 0 1. ° 1. 0 ±0 .1 5 ±3 45° 2 1 1: Anode 2: Cathode MTGFR102-001 Package φ5.75 max. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Dark current Photocurrent *1 PNZ300 Conditions ID VR = 10 V IL VR = 10 V, L = 1 000 lx λp VR = 10 V tr VR = 20 V, RL = 50 Ω Min 30 PNZ300F Peak emission wavelength Rise time *2 Fall time *2 5 Half-power angle PNZ300 Max 0.1 10 55 Unit nA µA 7 800 tf Terminal capacitance Typ nm 1 ns 1 ns Ct VR = 10 V, f = 1 MHz 7 pF θ The angle from which photocurrent 10 ° becomes 50% 40 PNZ300F Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VR (Input pulse) λP = 900 nm 50 Ω 90% 10% Sig. out RL (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2004 SHE00030BED 1 PNZ300F, PNZ300F PD Ta IL L 120 103 100 Power dissipation PD (mW) ID V R 102 VR = 10 V Ta = 25°C T = 2 856 K Dark current ID (nA) 40 PN Z3 00 60 10 10 PN Z3 00 F Photocurrent IL (µA) 102 80 Ta = 25°C 1 1 10−1 10−1 20 0 −20 0 20 40 60 80 10−2 100 1 102 10 Ambient temperature Ta (°C) 103 10−2 10−1 104 1 Illuminance L (lx) I L VR Ct VR 103 50 VR = 10 V, Ta = 25°C, T = 2 856 K 102 10 Reverse voltage VR (V) IL T a 100 Ta = 25 °C VR = 10 V L = 1 000 lx PNZ300F 30 PNZ300 20 L = 500 lx PNZ300F 10 L = 100 lx 80 102 Photocurrent IL (µA) Photocurrent IL (µA) Terminal capacitance Ct (pF) PNZ300 40 10 60 PNZ300 40 1 20 PNZ300 PNZ300F 20 30 40 10−1 −1 10 50 ID T a 10 1 10−1 10−2 0 40 80 Ambient temperature Ta (°C) 2 80 Directivity characteristics 80 60 40 20 0 200 40 100 VCE = 10 V Ta = 25°C 80 Relative sensitivity ∆S (%) Dark current ID (nA) 102 0 Ambient temperature Ta (°C) Spectral sensitivity characteristics 100 VR = 10 V 10−3 −40 0 −40 102 10 Reverse voltage VR (V) Reverse voltage VR (V) 103 1 400 600 800 1 000 Wavelength λ (nm) SHE00030BED 1 200 60 PNZ300 10 PNZ300 F 0 Relative sensitivity ∆S (%) 0 40 20 0 80 40 0 40 Half-power angle θ (°) 80 PNZ300, PNZ300F fC R L 103 VR = 10 V Ta = 25°C Cutoff frequency fC (MHz) 102 10 1 10−1 10−2 10−3 10 102 103 104 105 106 107 Load resistance RL (Ω) SHE00030BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP