Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAV74
High-speed double diode
Product data sheet
Supersedes data of 1999 May 11
2004 Jan 14
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
FEATURES
PINNING
• Small plastic SMD package
PIN
DESCRIPTION
• High switching speed: max. 4 ns
1
anode (a1)
• Continuous reverse voltage: max. 50 V
2
anode (a2)
• Repetitive peak reverse voltage: max. 60 V
3
cathode
• Repetitive peak forward current: max. 450 mA.
APPLICATIONS
• High-speed switching in thick and thin-film circuits.
2
lumns
1
DESCRIPTION
2
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
1
3
3
MAM108
Top view
MARKING
TYPE NUMBER
MARKING CODE(1)
BAV74
Fig.1 Simplified outline (SOT23) and symbol.
JA*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse
voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
−
60
V
−
50
V
single diode loaded; note 1; see Fig.2
−
215
mA
double diode loaded; note 1; see Fig.2
−
125
mA
−
450
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
square wave; Tj = 25 °C prior to surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
2
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
ORDERING INFORMATION
TYPE NUMBER
BAV74
PACKAGE
NAME
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 100 mA
1.0
V
VR = 25 V
30
nA
VR = 50 V
0.1
µA
VR = 25 V; Tj = 150 °C
30
µA
VR = 50 V; Tj = 150 °C
100
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-tp)
thermal resistance from junction to tie-point
Rth(j-a)
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
3
VALUE
UNIT
360
K/W
500
K/W
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
GRAPHICAL DATA
MBD033
300
MBG383
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
(3)
single diode loaded
double diode loaded
100
100
0
0
0
100
o
T amb ( C)
200
0
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
(2)
200
200
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 14
4
104
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
MBG376
5
10halfpage
handbook,
Cd
(pF)
IR
(nA)
10
10
10
MBG446
0.8
handbook, halfpage
4
0.6
(1)
3
(2)
(3)
0.4
2
10
0.2
0
0
100
Tj (oC)
0
200
(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
(3) VR = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2004 Jan 14
5
4
8
12
VR (V)
16
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
(1)
90%
VR
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2004 Jan 14
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 14
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product data sheet
High-speed double diode
BAV74
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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NXP Semiconductors makes no representation or
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Jan 14
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R76/04/pp9
Date of release: 2004 Jan 14
Document order number: 9397 750 12392