DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD2837; PMBD2838 High-speed double diodes Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification High-speed double diodes FEATURES • Small plastic SMD package PMBD2837; PMBD2838 MARKING PINNING MARKING CODE PIN DESCRIPTION • High switching speed: max. 4 ns TYPE NUMBER 1 anode (a1) • Continuous reverse voltage: max. 30 V and 50 V respectively PMBD2837 pA5 2 anode (a2) PMBD2838 pA6 3 common cathode • Repetitive peak reverse voltage: max. 35 V and 75 V respectively • Repetitive peak forward current: max. 450 mA. 2 handbook, 4 columns 1 APPLICATIONS • High-speed switching in e.g. surface mounted circuits. 2 1 3 3 DESCRIPTION The PMD2837, PMD2838 consist of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages. 1996 Sep 18 Top view MAM108 Fig.1 Simplified outline (SOT23) and symbol. 2 Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM VR repetitive peak reverse voltage PMBD2837 − 35 V PMBD2838 − 75 V − 30 V continuous reverse voltage PMBD2837 − 50 single diode loaded; see Fig.2; note 1 − 215 mA double diode loaded; see Fig.2; note 1 − 125 mA 450 mA PMBD2838 IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current V square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 storage temperature −65 +150 °C junction temperature − 150 °C Ptot total power dissipation Tstg Tj Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 3 mW Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage reverse current PMBD2837 PMBD2838 see Fig.3 IF = 1 mA − 715 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 150 mA − 1.25 V see Fig.5 VR = 30 V − 100 nA VR = 30 V; Tj = 150 °C − 40 µA VR = 50 V − 100 nA 50 µA VR = 50 V; Tj = 150 °C − Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 4 VALUE UNIT 360 K/W 500 K/W Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 5 104 Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 MBG375 5 10halfpage handbook, Cd (pF) IR (nA) 10 4 0.6 (1) 103 10 MBG446 0.8 handbook, halfpage (2) (3) 0.4 2 10 0.2 0 100 0 Tj (oC) 0 200 4 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1996 Sep 18 6 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 18 7 t tp output signal Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 PACKAGE OUTLINE 3.0 2.8 full pagewidth 0.55 0.45 0.150 0.090 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 0.48 0.38 30 o max 0.1 M A B MBC846 TOP VIEW Dimensions in mm. Fig.9 SOT23. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 18 8