Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2015EA
Low VF (MEGA) Schottky barrier
diode
Product data sheet
Supersedes data of 2003 May 20
2004 Feb 03
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
FEATURES
PMEG2015EA
PINNING
• Forward current: 1.5 A
PIN
• Reverse voltage: 20 V
1
cathode
• Ultra high-speed switching
2
anode
DESCRIPTION
• Very low forward voltage
• Very small plastic SMD package.
APPLICATIONS
1
• Ultra high-speed switching
2
1
• Voltage clamping
2
sym001
• Protection circuits.
DESCRIPTION
Marking code: S5.
The marking bar indicates the cathode.
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMEG2015EA
−
DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
20
V
IF
continuous forward current
Ts < 55 °C
−
1.5
A
IFSM
non-repetitive peak forward current
tp = 8 ms square wave
−
10
A
IFRM
repetitive peak forward current
tp = 1 ms; δ = ≤ 0.25
−
4.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
2004 Feb 03
2
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2015EA
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2; note 1
IF = 10 mA
240
270
mV
IF = 100 mA
300
350
mV
IF = 1 000 mA
480
550
mV
IF = 1 500 mA
560
660
mV
VR = 5 V
5
10
μA
VR = 8 V
7
20
μA
VR = 15 V
10
50
μA
19
25
pF
see Fig.3; note 1
VR = 5 V; f = 1 MHz;
see Fig.4
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-s)
thermal resistance from junction to solder point
VALUE
UNIT
note 1
450
K/W
note 2
210
K/W
note 3
90
K/W
Notes
1. Refer to SC-76 (SOD323) standard mounting conditions.
2. Device mounted on a printed-circuit board with copper clad 10 x 10 mm.
3. Soldering point of cathode tab.
2004 Feb 03
3
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2015EA
GRAPHICAL DATA
MLE111
104
handbook, halfpage
MHC312
105
handbook, halfpage
IF
(mA)
IR
(μA)
(1)
104
103
(1)
102
(2)
(3)
(2)
103
10
102
1
10
(3)
10−1
0
0.2
0.4
VF (V)
1
0.6
0
5
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MHC313
handbook, halfpage
Cd
(pF)
60
40
20
0
0
5
10
15
VR (V)
20
Tamb = 25 °C; f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 03
15
20
25
VR (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
80
10
4
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2015EA
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Feb 03
REFERENCES
IEC
JEDEC
JEITA
SC-76
5
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
Product data sheet
Low VF (MEGA) Schottky barrier diode
PMEG2015EA
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Feb 03
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R76/02/pp7
Date of release: 2004 Feb 03
Document order number: 9397 750 12628