Switching Diodes MA2B150, MA2B161, MA2B162, MA2B162A Silicon epitaxial planar type For switching circuits Unit : mm φ 0.56 max. ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct 1 Symbol VR MA2B162 MA2B162A Repetitive peak MA2B150 reverse voltage MA2B161 MA2B162 MA2B162A Average forward current Repetitive peak forward current Rating 35 50 Unit V IF(AV) IFRM 75 120 35 50 75 120 100 225 mA mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Storage temperature Tj Tstg 200 −55 to +150 °C °C VRRM 1st Band 2nd Band 24 min. Parameter Reverse voltage MA2B150 (DC) MA2B161 4.5 max. ■ Absolute Maximum Ratings Ta = 25°C 24 min. COLORED BAND INDICATES CATHODE V 2 φ 1.95 max. 1 : Cathode 2 : Anode JEDEC : DO-35 Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA2B150 IR Conditions Min MA2B150 VF VR Ct VR = 15 V VR = 30 V VR = 15 V VR = 50 V VR = 20 V VR = 75 V VR = 20 V VR = 120 V VR = 35 V, Ta = 150°C VR = 50 V, Ta = 150°C VR = 75 V, Ta = 150°C VR = 75 V, Ta = 150°C IF = 100 mA IR = 5 µA VR = 0 V, f = 1 MHz Reverse recovery time* MA2B150 trr IF = 10 mA, VR = 1 V, RL = 100 Ω MA2B161 MA2B162 MA2B162A MA2B150 MA2B161 MA2B162 MA2B162A Forward voltage (DC) Reverse voltage (DC) Terminal capacitance MA2B161/162/162A Measure when Irr = 0.1 · IR ■ Cathode Indication Type No. Color MA2B150 MA2B161 MA2B162 MA2B162A 1st Band White Green Violet Black 2nd Band Black Typ 0.012 0.012 50 50 0.95 Max Unit 0.025 0.1 0.025 5 0.025 5 0.025 5 100 100 100 100 1.2 µA 2 V V pF 10 ns 35 0.9 2.2 4 Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit 1 MA2B150, MA2B161, MA2B162, MA2B162A Switching Diodes IF V F 103 Input Pulse tp tr Output Pulse 10% A Pulse Generator (PG-10N) Rs = 50 Ω t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 W.F.Analyzer (SAS-8130) Ri = 50 Ω trr IF 90% VR 102 t Forward current IF (mA) Bias Application Unit N-50BU trr measuring circuit 10 Ta = 150°C 1 75°C 25°C − 20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) IR VR IR V R 102 102 MA2B161 MA2B162 MA2B162A MA2B150 Ta = 150°C 10−1 25°C 10−2 0.8 100°C 1 10−1 25°C 10−2 20 30 40 0 20 VR = 35 V Reverse current IR (µA) Reverse current IR (µA) 1 10−1 10−2 80 40 80 120 0 −40 100 0 MA2B161 MA2B162 MA2B162A 160 200 VR = 120 V 80 120 160 200 f = 1 MHz Ta = 25°C 75 V 50 V 20 V 1.6 160 Ambient temperature Ta (°C) 200 MA2B150 1.2 MA2B161, MA2B162, MA2B162A 0.8 0.4 0 40 120 Ct VR 10−1 0 80 2.0 1 10−3 40 Ambient temperature Ta (°C) 10−2 Ambient temperature Ta (°C) 2 60 10 15 V 0 0.1 mA IR T a 102 MA2B150 10 1 mA Reverse voltage VR (V) IR Ta 102 40 Terminal capacitance Ct (pF) 10 10 mA 0.4 0.01 mA 10−3 0 IF = 20 mA 0.6 0.2 Reverse voltage VR (V) 10−3 Forward voltage VF (V) 100°C 1 10−3 Ta = 150°C 10 Reverse current IR (µA) Reverse current IR (µA) 10 VF Ta 1.0 0 4 8 12 16 Reverse voltage VR (V) 20