Switching Diodes MA3X157A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Repetitive peak Single forward current Series Non-repetitive peak forward surge current* Single 1.45 + 0.1 0.4 − 0.05 + 0.1 0.16 − 0.06 0 to 0.1 Unit Series 0.8 + 0.2 1.1 − 0.1 Rating Single 3 0.1 to 0.3 0.4 ± 0.2 Symbol Forward current (DC) 1 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.95 • High switching speed • Small terminal capacitance, Ct • Both chips have even characteristics • Can be connected in series 0.65 ± 0.15 1.5 − 0.05 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 1 : Anode 1 2 : Cathode 2 3 : Anode 2 JEDEC : TO-236 Cathode 1 EIAJ : SC-59 Mini Type Package (3-pin) 65 IFRM 225 Marking Symbol: MS mA 145 IFSM 500 Series Internal Connection mA 325 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 3 2 Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 0.1 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA3X157A Switching Diodes IF V F IR V R 103 102 102 10 VF Ta 1.2 Ta = 125°C 10 75°C 25°C −20°C 1 10−1 10−2 1 75°C 10–1 25°C 10–2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) 1.0 Ta = 125°C 10–3 0.2 0.4 0.6 0.8 1.0 1.2 Ct VR f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) 5 Reverse current IR (µA) 40 V 1 10−1 10−2 3 2 1 0.5 0.3 0.2 10−3 −40 0 40 80 120 160 Ambient temperature Ta (°C) 2 1 mA 0.1 mA 0.1 0 10 20 30 40 −40 0 40 80 120 160 Ambient temperature Ta (°C) Reverse voltage VR (V) 10 VR = 80 V 3 mA 0.4 0 0 IR T a 10 IF = 10 mA 0.6 0.2 Forward voltage VF (V) 102 0.8 50 Reverse voltage VR (V) 60