MC74LVX259 8-Bit Addressable Latch/1-of-8 Decoder CMOS Logic Level Shifter With LSTTL−Compatible Inputs http://onsemi.com The MC74LVX259 is an 8−bit Addressable Latch fabricated with silicon gate CMOS technology. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The LVX259 is designed for general purpose storage applications in digital systems. The device has four modes of operation as shown in the mode selection table. In the addressable latch mode, the data on Data In is written into the addressed latch. The addressed latch follows the data input with all non−addressed latches remaining in their previous states. In the memory mode, all latches remain in their previous state and are unaffected by the Data or Address inputs. In the one−of−eight decoding or demultiplexing mode, the addressed output follows the state of Data In with all other outputs in the LOW state. In the Reset mode, all outputs are LOW and unaffected by the address and data inputs. When operating the LVX259 as an addressable latch, changing more than one bit of the address could impose a transient wrong address. Therefore, this should only be done while in the memory mode. The MC74LVX259 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74LVX259 to be used to interface 5.0 V circuits to 3.0 V circuits. SOIC−16 D SUFFIX CASE 751B PIN ASSIGNMENT • A0 1 16 VCC A1 2 15 RESET A2 3 14 ENABLE Q0 4 13 DATA IN Q1 5 12 Q7 Q2 6 11 Q6 Q3 7 10 Q5 GND 8 9 Q4 MARKING DIAGRAMS Features • • • • • • • • • TSSOP−16 DT SUFFIX CASE 948F High Speed: tPD = 7.0 ns (Typ) at VCC = 3.3 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load Power Down Protection Provided on Inputs and Outputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V These Devices are Pb−Free and are RoHS Compliant 16 16 LVX 259 ALYWG G LVX259G AWLYWW 1 1 SOIC−16 LVX259 A WL, L Y WW, W G or G TSSOP−16 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 4 1 Publication Order Number: MC74LVX259/D MC74LVX259 4 A0 ADDRESS INPUTS A1 A2 DATA IN RESET ENABLE 1 5 Q0 Q1 2 6 Q2 7 9 10 Q3 Q4 Q5 11 12 Q6 3 13 NONINVERTING OUTPUTS Q7 PIN 16 = VCC PIN 8 = GND 15 14 Figure 1. Logic Diagram A0 1 A1 2 A2 3 BIN/OCT 1 0 2 1 4 2 3 4 13 ID 14 EN 6 15 R 7 5 4 5 6 7 8 10 11 12 A0 1 Q1 A1 2 Q2 A2 3 Q0 DMUX 0 0 0 G 7 1 2 2 Q3 3 Q4 4 13 Q5 ID 14 Q6 15 Q7 5 EN 6 R 7 4 5 6 7 8 10 11 12 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Figure 2. IEC Logic Symbol MODE SELECTION TABLE Enable Reset LATCH SELECTION TABLE Mode Address Inputs B A Latch Addressed L H Addressable Latch C H H Memory L L L Q0 L L 8−Line Demultiplexer L L H Q1 H L Reset L H L Q2 L H H Q3 H L L Q4 H L H Q5 H H L Q6 H H H Q7 http://onsemi.com 2 MC74LVX259 DATA INPUT 13 D D D D 4 5 6 7 Q0 Q1 Q2 Q3 A0 ADDRESS INPUTS 3 TO 8 DECODER A1 D 9 Q4 A2 D ENABLE Q5 14 D D RESET 10 15 Figure 3. Expanded Logic Diagram http://onsemi.com 3 11 12 Q6 Q7 MC74LVX259 MAXIMUM RATINGS Symbol Parameter Value Unit VCC Positive DC Supply Voltage −0.5 to +7.0 V VIN Digital Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage −0.5 to VCC +0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current ±20 mA IOUT DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±75 mA PD Power Dissipation in Still Air 200 180 mW TSTG Storage Temperature Range −65 to +150 °C VESD ESD Withstand Voltage > 2000 > 200 > 2000 V Above VCC and Below GND at 125°C (Note 4) ±300 mA SOIC Package TSSOP 143 164 °C/W ILATCHUP qJA SOIC Package TSSOP Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Latchup Performance Thermal Resistance, Junction−to−Ambient Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 3.6 V VCC DC Supply Voltage VIN DC Input Voltage 0 5.5 V DC Output Voltage 0 VCC V −40 85 °C 0 100 ns/V VOUT TA Operating Temperature Range, all Package Types tr, tf Input Rise or Fall Time VCC = 3.3 V ± 0.3 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. http://onsemi.com 4 MC74LVX259 DC CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol Parameter Condition −40°C ≤ TA ≤ 85°C TA = 25°C (V) Min Typ Max Min Max Unit VIH Minimum High−Level Input Voltage 2.0 3.0 3.6 0.75 VCC 0.7 VCC 0.7 VCC − − − − − − 0.75 VCC 0.7 VCC 0.7 VCC − − − V VIL Maximum Low−Level Input Voltage 2.0 3.0 3.6 − − − − − − 0.25 VCC 0.3 VCC 0.3 VCC − − − 0.25 VCC 0.3 VCC 0.3 VCC V VOH High−Level Output Voltage IOH = −50 mA 2.0 1.9 2.0 − 1.9 − V IOH = −50 mA 3.0 2.9 3.0 − 2.9 − IOH = −4 mA 3.0 2.58 − − 2.48 − IOL = 50 mA 2.0 − 0.0 0.1 − 0.1 IOL = 50 mA 3.0 − 0.0 0.1 − 0.1 VOL Low−Level Output Voltage IOL = 4 mA V 3.0 − − 0.36 − 0.44 IIN Input Leakage Current VIN = 5.5 V or GND 0 to 3.6 − − ±0.1 − ±1.0 mA ICC Maximum Quiescent Supply Current (per package) VIN = VCC or GND 3.6 1.0 1.0 2.0 − − mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns −40°C ≤ TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL tPLH, tPHL tPLH, tPHL tPHL CIN Parameter Maximum Propagation Delay, Data to Output (Figures 4 and 8) Test Conditions Min Typ Max Min Max Unit ns VCC = 2.7 V CL = 15pF CL = 50pF − − 6.3 9.0 9.0 14.0 1.0 1.0 12.0 15.0 VCC = 3.3 V ± 0.3 V CL = 15pF CL = 50pF − − 5.6 8.0 8.0 12.0 1.0 1.0 11.0 14.0 Maximum Propagation Delay, Address Select to Output (Figures 5 and 8) VCC = 2.7 V CL = 15pF CL = 50pF − − 6.3 9.0 9.0 14.0 1.0 1.0 12.0 15.0 VCC = 3.3 V ± 0.3 V CL = 15pF CL = 50pF − − 5.6 8.0 8.0 12.0 1.0 1.0 11.0 14.0 Maximum Propagation Delay, Enable to Output (Figures 6 and 8) VCC = 2.7 V CL = 15pF CL = 50pF − − 6.3 9.0 9.0 14.0 1.0 1.0 12.0 15.0 VCC = 3.3 V ± 0.3 V CL = 15pF CL = 50pF − − 5.6 8.0 9.0 12.0 1.0 1.0 11.0 14.0 VCC = 2.7 V CL = 15pF CL = 50pF − − 6.3 9.0 9.0 14.0 1.0 1.0 12.0 15.0 VCC = 3.3 V ± 0.3 V CL = 15pF CL = 50pF − − 5.6 8.0 9.0 12.0 1.0 1.0 11.0 14.0 − 6 10 − 10 Maximum Propogation Delay, Reset to Output (Figures 6 and 8) Maximum Input Capacitance ns ns ns pF Typical @ 25°C, VCC = 3.3 V CPD 30 Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 5 MC74LVX259 TIMING REQUIREMENTS Input tr = tf = 3.0 ns TA = ≤ 85°C TA = 25°C Symbol Parameter tw tsu th tr, tf Test Conditions Min Typ Max Min Max Unit ns Minimum Pulse Width, Reset or Enable (Figure 7) VCC = 2.7 V 4.5 − − 5.0 − VCC = 3.3 V ± 0.3 V 4.5 − − 5.0 − Minimum Setup Time, Address or Data to Enable (Figure 7) VCC = 2.7 V 4.0 − − 4.0 − VCC = 3.3 V ± 0.3 V 3.0 − − 3.0 − Minimum Hold Time, Enable to Address or Data (Figure 6 or 7) VCC = 2.7 V 2.0 − − 2.0 − VCC = 3.3 V ± 0.3 V 2.0 − − 2.0 − Maximum Input, Rise and Fall Times (Figure 4) VCC = 2.7 V − − 400 − 300 VCC = 3.3 V ± 0.3 V − − 300 − 300 ns ns ns VCC DATA IN tf tr VCC 50% DATA IN GND ADDRESS SELECT VCC 50% GND GND tPLH tPHL VCC 50% GND 50% tPHL OUTPUT Q tPHL OUTPUT Q 50% Figure 4. Switching Waveform Figure 5. Switching Waveform VCC DATA IN tw tw ENABLE 50% 50% tPHL VCC GND DATA IN VCC RESET tw 50% tPHL GND VCC 50% GND GND tPHL OUTPUT Q OUTPUT Q 50% Figure 6. Switching Waveform Figure 7. Switching Waveform TEST POINT DATA IN OR ADDRESS SELECT VCC OUTPUT 50% th(H) tsu th(H) tsu ENABLE GND DEVICE UNDER TEST CL * VCC 50% GND *Includes all probe and jig capacitance Figure 8. Switching Waveform Figure 9. Test Circuit http://onsemi.com 6 MC74LVX259 ORDERING INFORMATION Package Shipping† MC74LVX259DG SOIC−16 (Pb−Free) 48 Units / Rail MC74LVX259DR2G SOIC−16 (Pb−Free) 2500 Tape & Reel MC74LVX259DTG TSSOP−16 (Pb−Free) 96 Units / Rail MC74LVX259DTR2G TSSOP−16 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. EMBOSSED CARRIER DIMENSIONS (See Notes 6 and 7) Tape Size B1 Max 8 mm 4.35 mm (0.179”) 12 mm 8.2 mm (0.323”) 16 mm 24 mm D D1 E F K P P0 P2 R T W 1.5 mm + 0.1 −0.0 (0.059” +0.004 −0.0) 1.0 mm Min (0.179”) 1.75 mm ±0.1 (0.069 ±0.004”) 3.5 mm ±0.5 (1.38 ±0.002”) 2.4 mm Max (0.094”) 4.0 mm ±0.10 (0.157 ±0.004”) 4.0 mm ±0.1 (0.157 ±0.004”) 2.0 mm ±0.1 (0.079 ±0.004”) 25 mm (0.98”) 0.6 mm (0.024) 8.3 mm (0.327) 5.5 mm ±0.5 (0.217 ±0.002”) 6.4 mm Max (0.252”) 4.0 mm ±0.10 (0.157 ±0.004”) 8.0 mm ±0.10 (0.315 ±0.004”) 12.1 mm (0.476”) 7.5 mm ±0.10 (0.295 ±0.004”) 7.9 mm Max (0.311”) 4.0 mm ±0.10 (0.157 ±0.004”) 8.0 mm ±0.10 (0.315 ±0.004”) 12.0 mm ±0.10 (0.472 ±0.004”) 16.3 mm (0.642) 20.1 mm (0.791”) 11.5 mm ±0.10 (0.453 ±0.004”) 11.9 mm Max (0.468”) 16.0 mm ±0.10 (0.63 ±0.004”) 24.3 mm (0.957) 1.5 mm Min (0.060) 30 mm (1.18”) 12.0 mm ±0.3 (0.470 ±0.012”) 6. Metric Dimensions Govern−English are in parentheses for reference only. 7. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to 0.50 mm max. The component cannot rotate more than 10° within the determined cavity http://onsemi.com 7 MC74LVX259 PACKAGE DIMENSIONS TSSOP−16 CASE 948F ISSUE B 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U S V S S K ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. N 0.25 (0.010) 8 1 M 0.15 (0.006) T U S A −V− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. N F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE H D DETAIL E G DIM A B C D F G H J J1 K K1 L M SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 16X 0.36 16X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74LVX259 PACKAGE DIMENSIONS SOIC−16 CASE 751B−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 16 9 −B− 1 P 8 PL 0.25 (0.010) 8 M B S DIM A B C D F G J K M P R G R K F X 45 _ C −T− SEATING PLANE J M D MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 16 PL 0.25 (0.010) M T B S A S SOLDERING FOOTPRINT* 8X 6.40 16X 1 1.12 16 16X 0.58 1.27 PITCH 8 9 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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