NUD3105 D

NUD3105
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps , and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
• Provides a Robust Driver Interface Between DC Relay Coil and
•
•
•
•
•
•
•
Sensitive Logic Circuits
Optimized to Switch Relays from 3.0 V to 5.0 V Rail
Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
Internal Zener Eliminates the Need of Free−Wheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
Low VDS(on) Reduces System Current Drain
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
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RELAY/INDUCTIVE
LOAD DRIVER
0.5 AMPERE, 8.0 VOLT CLAMP
MARKING
DIAGRAMS
SOT−23
(TO−236)
CASE 318
SC−74
CASE 318F
STYLE 7
6
1
Typical Applications
• Telecom: Line Cards, Modems, Answering Machines, FAX
• Computers and Office: Photocopiers, Printers, Desktop Computers
• Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
• Industrial:Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
• Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
JW4
M
D
G
JW4 M G
G
1
JW4 D G
G
= Device Code
= Date Code*
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Lamp Drivers
ORDERING INFORMATION
Package
Shipping†
NUD3105LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
NUD3105DMT1G
SOT−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3105DMT1G
SOT−74
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 11
1
Publication Order Number:
NUD3105/D
NUD3105
Drain (3)
Drain (6)
Gate (2)
Gate (1)
Drain (3)
1.0 k
Gate (5)
1.0 k
1.0 k
300 k
300 k
300 k
Source (1)
CASE 318
Source (4)
CASE 318F
Source (2)
Figure 1. Internal Circuit Diagrams
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
VDSS
Drain to Source Voltage − Continuous
VGS
Value
Unit
6.0
Vdc
Gate to Source Voltage – Continuous
6.0
Vdc
ID
Drain Current – Continuous
500
mA
Ez
Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2)
50
mJ
Ezpk
Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5)
4.5
mJ
TJ
Junction Temperature
150
°C
TA
Operating Ambient Temperature
−40 to 85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
PD
Total Power Dissipation (Note 1)
Derating Above 25°C
SOT−23
225
1.8
mW
mW/°C
Total Power Dissipation (Note 1)
Derating Above 25°C
SC−74
380
1.5
mW
mW/°C
SOT−23
SC−74
556
329
°C/W
RqJA
Thermal Resistance, Junction−to−Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
2. Refer to the section covering Avalanche and Energy.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
6.0
8.0
9.0
V
OFF CHARACTERISTICS
VBRDSS
Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA)
BVGSO
Ig = 1.0 mA
−
−
8.0
V
Drain to Source Leakage Current
(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)
(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )
−
−
−
−
15
15
mA
Gate Body Leakage Current (318)
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
5.0
−
−
−
19
50
mA
Gate Body Leakage Current (318F)
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
5.0
−
−
−
35
65
mA
IDSS
IGSS
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2
NUD3105
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 85°C)
0.8
0.8
1.2
−
1.4
1.4
V
Drain to Source On−Resistance
(ID = 250 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 5.0 V)
(ID = 500 mA, VGS = 3.0 V, TJ=85°C)
(ID = 500 mA, VGS = 5.0 V, TJ=85°C)
−
−
−
−
−
−
−
−
−
−
1.2
1.3
0.9
1.3
0.9
W
300
200
400
−
−
−
mA
350
570
−
mmhos
ON CHARACTERISTICS
VGS(th)
RDS(on)
IDS(on)
gFS
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C)
Forward Transconductance
(VOUT = 5.0 V, IOUT = 0.25 A)
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
(VDS = 5.0 V,VGS = 0 V, f = 10 kHz)
−
25
−
pF
Coss
Output Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
−
37
−
pF
Crss
Transfer Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
−
8.0
−
pF
Min
Typ
Max
Units
−
−
25
80
−
−
−
−
44
44
−
−
−
−
23
32
−
−
−
−
53
30
−
−
SWITCHING CHARACTERISTICS
Characteristic
Symbol
tPHL
tPLH
tPHL
tPLH
tf
tr
tf
tr
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V)
Low to High Propagation Delay; Figure 1 (5.0 V)
High to Low Propagation Delay; Figure 1 (3.0 V)
Low to High Propagation Delay; Figure 1 (3.0 V)
Transition Times:
Fall Time; Figure 1 (5.0 V)
Rise Time; Figure 1 (5.0 V)
nS
nS
Fall Time; Figure 1 (3.0 V)
Rise Time; Figure 1 (3.0 V)
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3
NUD3105
VIH
Vin
50%
0V
tPHL
tPLH
VOH
90%
Vout
50%
10%
VOL
tr
tf
Figure 1. Switching Waveforms
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NUD3105
TYPICAL CHARACTERISTICS
10
TJ = 25°C
VGS = 5.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
1.0
VGS = 3.0 V
0.1
VGS = 2.0 V
0.01
0.001
VDS = 0.8 V
1.0
0.1
0.01
85°C
0.001
50°C
0.0001
25°C
0.0001
0.00001
−40°C
VGS = 1.0 V
0.00001
0.000001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
Figure 3. Transfer Function
5.0
50
ID = 0.5 A
VGS = 3.0 V
1000
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (mW)
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1200
ID = 0.25 A
VGS = 3.0 V
800
600
400
ID = 0.5 A
VGS = 5.0 V
200
0
−50
−25
0
25
50
75
100
125
−40°C
45
ID = 250 mA
40
35
125°C
30
85°C
25
50°C
20
25°C
15
0.8
1.0
1.2
1.4
1.8
1.6
TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On Resistance Variation vs. Temperature
Figure 5. RDS(ON) Variation with
Gate−To−Source Voltage
IZ = 10 mA
VZ, ZENER CLAMP VOLTAGE (V)
8.18
8.16
8.14
8.12
8.10
8.08
8.06
8.04
8.02
8.00
−50
2.0
13.0
8.20
VZ, ZENER VOLTAGE (V)
1.0
−25
0
25
50
75
100
125
VGS = 0 V
12.0
−40°C
11.0
25°C
10.0
9.0
8.0
7.0
85°C
6.0
0.1
1.0
10
100
1000
TEMPERATURE (°C)
IZ, ZENER CURRENT (mA)
Figure 6. Zener Voltage vs. Temperature
Figure 7. Zener Clamp Voltage vs. Zener Current
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NUD3105
TYPICAL CHARACTERISTICS
40
35
1.1
125°C
IGSS, GATE LEAKAGE (mA)
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (W)
1.2
1.0
0.9
85°C
0.8
50°C
0.7
25°C
0.6
−40°C
0.5
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4 0.45
0.5
30
25
VGS = 5.0 V
20
15
VGS = 3.0 V
10
5
0
−50
0
−25
ID, DRAIN CURRENT (A)
25
50
75
100
125
TEMPERATURE (°C)
Figure 8. On−Resistance vs. Drain Current and
Temperature
Figure 9. Gate Leakage vs. Temperature
1.0
VGS = 3.0 V, TC = 25°C
ID, DRAIN CURRENT (A)
ID−Continuous = 0.5 A
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
DC
PW = 0.1 s
DC = 50%
0.1
PW = 10 ms
DC = 20%
PW = 7.0 ms
DC = 5%
Typical
IZ vs. VZ
V(BR)DSS min = 6.0 V
0.01
0.01
0.1
10
1.0
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 10. Safe Operating Area
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
Pd(pk)
0.02
0.01
0.01
0.001
0.01
PW
t1
t2
SINGLE PULSE
0.1
PERIOD
DUTY CYCLE = t1/t2
1.0
10
100
1000
t1, PULSE WIDTH (ms)
Figure 11. Transient Thermal Response
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6
10,000
100,000
1,000,000
NUD3105
Designing with this Data Sheet
4. Verify that the circuit driving the gate will meet
the VGS(th) from the Electrical Characteristics
table.
5. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
6. Use IGSS and IDSS from the Electrical
Characteristics table to ensure that “OFF” state
leakage over temperature and voltage extremes
does not violate any system requirements.
7. Review circuit operation and insure none of the
device max ratings are being exceeded.
1. Determine the maximum inductive load current (at
max VCC, min coil resistance & usually minimum
temperature) that the NUD3105 will have to drive
and make sure it is less than the max rated current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 11 and the instructions with it
to determine the maximum limit on transistor
power dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
APPLICATIONS DIAGRAMS
+3.0 ≤ VDD ≤ +3.75 Vdc
+4.5 ≤ VCC ≤ +5.5 Vdc
+
+
Vout (3)
Vout (3)
NUD3105
NUD3105
Vin (1)
Vin (1)
GND (2)
GND (2)
Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V Level Translating Interface
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7
NUD3105
Max Continuous Current Calculation
for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C
Assuming ±10% Make Tolerance,
R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C
−
−
TC for Annealed Copper Wire is 0.4%/°C
AROMAT
JS1E−5V
R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C
IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA
+4.5 TO +5.5 Vdc
AROMAT
JS1E−5V
+
+
+
+
+4.5 TO +5.5 Vdc
+
AROMAT
JS1E−5V
AROMAT
JS1E−5V
AROMAT
TX2−5V
−
−
−
Vout (3)
Vout (3)
NUD3105
NUD3105
Vin (1)
Vin (1)
GND (2)
GND (2)
Figure 13. A 140 mW, 5.0 V Relay with TTL Interface
Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank
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8
NUD3105
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
NUD3105
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
6
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
E
HE
1
b
e
A
0.05 (0.002)
q
C
L
A1
SOLDERING FOOTPRINT*
2.4
0.094
DIM
A
A1
b
c
D
E
e
L
HE
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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NUD3105/D