NUD3105D D

NUD3105D
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps, and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
• Provides a Robust Driver Interface Between D.C. Relay Coil and
•
•
•
•
•
•
Sensitive Logic Circuits
Optimized to Switch Relays from 3.0 V to 5.0 V Rail
Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
Internal Zener Eliminates the Need of Free−Wheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
Low VDS(on) Reduces System Current Drain
Pb−Free Package is Available
Typical Applications
• Telecom: Line Cards, Modems, Answering Machines, FAX
• Computers and Office: Photocopiers, Printers, Desktop Computers
• Consumer: TVs and VCRs, Stereo Receivers, CD Players,
•
•
Cassette Recorders
Industrial: Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
Gate (2)
Relay, Inductive Load Driver
0.5 Amp, 8.0 V Clamp
MARKING
DIAGRAM
6
JW4 D G
G
1
SC−74
CASE 318F
STYLE 7
JW4
D
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NUD3105DMT1
NUD3105DMT1G
Package
Shipping†
SC−74
3000/Tape & Reel
SC−74
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
INTERNAL CIRCUIT DIAGRAMS
Drain (6)
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Drain (3)
1.0 k
Gate (5)
1.0 k
300 k
300 k
Source (1)
Source (4)
CASE 318F
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 5
1
Publication Order Number:
NUD3105D/D
NUD3105D
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Value
Unit
VDSS
Drain to Source Voltage − Continuous
6.0
Vdc
VGS
Gate to Source Voltage – Continuous
6.0
Vdc
ID
Drain Current – Continuous
500
mA
Ez
Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C)
50
mJ
TJ
Junction Temperature
150
°C
TA
Operating Ambient Temperature
−40 to 85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
PD
Total Power Dissipation (Note 1)
Derating Above 25°C
380
1.5
mW
mW/°C
Thermal Resistance Junction−to−Ambient
329
°C/W
RqJA
Rating
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
6.0
8.0
9.0
V
OFF CHARACTERISTICS
VBRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
BVGSO
Ig = 1.0 mA
−
−
8.0
V
IDSS
Drain to Source Leakage Current
(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)
(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )
−
−
−
−
15
15
mA
IGSS
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
5.0
−
−
−
35
65
mA
0.8
0.8
1.2
−
1.4
1.4
V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 85°C)
RDS(on)
Drain to Source On−Resistance
(ID = 250 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 5.0 V)
(ID = 500 mA, VGS = 3.0 V, TJ = 85°C)
(ID = 500 mA, VGS = 5.0 V, TJ = 85°C)
−
−
−
−
−
−
−
−
−
−
1.2
1.3
0.9
1.3
0.9
W
IDS(on)
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C)
300
200
400
−
−
−
mA
350
570
−
mMhos
gFS
Forward Transconductance
(VOUT = 5.0 V, IOUT = 0.25 A)
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2
NUD3105D
TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
(VDS = 5.0 V,VGS = 0 V, f = 10 kHz)
−
25
−
pF
Coss
Output Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
−
37
−
pF
Crss
Transfer Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
−
8.0
−
pF
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
Symbol
Characteristic
tPHL
tPLH
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V)
Low to High Propagation Delay; Figure 1 (5.0 V)
−
−
25
80
−
−
nS
tPHL
tPLH
High to Low Propagation Delay; Figure 1 (3.0 V)
Low to High Propagation Delay; Figure 1 (3.0 V)
−
−
44
44
−
−
tf
tr
Transition Times:
Fall Time; Figure 1 (5.0 V)
Rise Time; Figure 1 (5.0 V)
−
−
23
32
−
−
nS
tf
tr
Fall Time; Figure 1 (3.0 V)
Rise Time; Figure 1 (3.0 V)
−
−
53
30
−
−
VCC
Vin
50%
GND
tPLH
Vout
tPHL
VZ
VCC
90%
50%
10%
GND
tr
tf
Figure 1. Switching Waveforms
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3
−
NUD3105D
TYPICAL CHARACTERISTICS
10
TJ = 25°C
VGS = 5.0 V
1.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
VGS = 3.0 V
0.1
VGS = 2.0 V
0.01
0.001
0.01
50°C
0.0001
−40°C
VGS = 1.0 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.000001
0.8
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
Figure 3. Transfer Function
5.0
50
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
ID = 0.5 A
VGS = 3.0 V
1000
ID = 0.25 A
VGS = 3.0 V
800
600
400
ID = 0.5 A
VGS = 5.0 V
200
0
−50
−25
0
25
50
75
100
125
45
−40°C
ID = 250 mA
40
35
125°C
30
85°C
25
50°C
20
25°C
15
0.8
1.0
1.2
1.4
1.8
1.6
TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On Resistance Variation vs. Temperature
Figure 5. RDS(ON) Variation with
Gate−To−Source Voltage
IZ = 10 mA
VZ, ZENER CLAMP VOLTAGE (V)
8.18
8.16
8.14
8.12
8.10
8.08
8.06
8.04
8.02
8.00
−50
2.0
13.0
8.20
VZ, ZENER VOLTAGE (V)
85°C
0.001
0.00001
1200
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (mW)
0.1
25°C
0.0001
0.00001
VDS = 0.8 V
1.0
−25
0
25
50
75
100
125
VGS = 0 V
12.0
−40°C
11.0
25°C
10.0
9.0
8.0
7.0
85°C
6.0
0.1
1.0
10
100
1000
TEMPERATURE (°C)
IZ, ZENER CURRENT (mA)
Figure 6. Zener Voltage vs. Temperature
Figure 7. Zener Clamp Voltage vs. Zener Current
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4
NUD3105D
TYPICAL CHARACTERISTICS
1.2
40
35
125°C
IGSS, GATE LEAKAGE (mA)
RDS(ON), DRAIN−TO−SOURCE
RESISTANCE (W)
1.1
1.0
0.9
85°C
0.8
50°C
0.7
25°C
0.6
−40°C
0.5
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4 0.45
0.5
30
25
VGS = 5.0 V
20
15
VGS = 3.0 V
10
5
0
−50
0
−25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
50
75
100
125
TEMPERATURE (°C)
Figure 8. On−Resistance vs. Drain Current and
Temperature
1.0
25
VGS = 3.0 V, TC = 25°C
Figure 9. Gate Leakage vs. Temperature
ID−Continuous = 0.5 A
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
DC
PW = 0.1 s
DC = 50%
0.1
PW = 10 ms
DC = 20%
PW = 7.0 ms
DC = 5%
Typical
IZ vs. VZ
V(BR)DSS min = 6.0 V
0.01
0.01
0.1
1.0
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 10. Safe Operating Area for NUD3105DLT1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
Pd(pk)
0.02
0.01
0.01
0.001
0.01
PW
SINGLE PULSE
0.1
t1
t2
PERIOD
DUTY CYCLE = t1/t2
1.0
10
100
1000
10,000
t1, PULSE WIDTH (ms)
Figure 11. Transient Thermal Response for NUD3105DLT1
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5
100,000
1,000,000
NUD3105D
Designing with this Data Sheet
4. Verify that the circuit driving the gate will meet
the VGS(th) from the Electrical Characteristics
table.
5. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
6. Use IGSS and IDSS from the Electrical
Characteristics table to insure that “OFF” state
leakage over temperature and voltage extremes
does not violate any system requirements.
7. Review circuit operation and insure none of the
device max ratings are being exceeded.
1. Determine the maximum inductive load current (at
max VCC, min coil resistance & usually minimum
temperature) that the NUD3105D will have to
drive and make sure it is less than the max rated
current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 11 and the instructions with it
to determine the maximum limit on transistor
power dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
APPLICATIONS DIAGRAMS
+3.0 ≤ VDD ≤ +3.75 Vdc
+4.5 ≤ VCC ≤ +5.5 Vdc
+
+
Vout (6)
Vout (3)
NUD3105DDMT1
Vin (2)
Vin (5)
GND (1)
GND (4)
Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V Level Translating Interface
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6
NUD3105D
Max Continuous Current Calculation
for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C
Assuming ±10% Make Tolerance,
R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C
−
TC for Annealed Copper Wire is 0.4%/°C
−
AROMAT
JS1E−5V
R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C
IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA
+4.5 TO +5.5 Vdc
AROMAT
JS1E−5V
+
+
+
+
+4.5 TO +5.5 Vdc
+
AROMAT
JS1E−5V
AROMAT
TX2−5V
AROMAT
JS1E−5V
−
−
−
Vout (3)
Vout (3)
NUD3105LT1
NUD3105LT1
Vin (1)
Vin (1)
GND (2)
GND (2)
Figure 13. A 140 mW, 5.0 V Relay with TTL Interface
Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank
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7
NUD3105D
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW
STANDARD 318F−05.
D
6
HE
1
5
4
2
3
E
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
C
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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NUD3105D/D