MJE270G (NPN), MJE271G (PNP) Complementary Silicon Power Transistors Features http://onsemi.com • High Safe Operating Area • • • 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS IS/B @ 40 V, 1.0 s = 0.375 A Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) These Devices are Pb−Free and are RoHS Compliant* NPN MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector−Emitter Voltage Collector Current − Continuous PNP COLLECTOR 2, 4 COLLECTOR 2, 4 BASE 1 BASE 1 IC 2.0 Adc EMITTER 3 EMITTER 3 ICM 4.0 Adc MJE270 MJE271 Base Current IB 0.1 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 0.12 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD Collector Current − Peak Operating and Storage Junction Temperature Range TJ, Tstg 1.5 0.012 W W/_C −65 to +150 _C TO−225 CASE 77−09 STYLE 3 1 2 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.33 _C/W Thermal Resistance, Junction−to−Ambient RqJA 83.3 _C/W YWW JE27xG Y = Year WW = Work Week JE27x = Specific Device Code x= 0 or 1 G = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 8 1 Device Package Shipping MJE270G TO−225 (Pb−Free) 500 Units/Box MJE271G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: MJE270/D MJE270G (NPN), MJE271G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 100 − − 1.0 − 0.3 − 0.1 375 − 500 1500 − − − − 2.0 3.0 − 2.0 6.0 − Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 100 Vdc, IB = 0) ICEO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Non−repetitive) IS/b Adc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 3.0 Vdc) (IC = 120 mAdc, VCE = 10 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 20 mAdc, IB = 0.2 mAdc) (IC = 120 mAdc, IB = 1.2 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 120 mAdc, VCE = 10 Vdc) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS fT Current Gain − Bandwidth Product (Note 2) (IC = 0.05 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = ⎪hfe⎪• ftest. 10 VCE = 3.0 V 150°C IC, COLLECTOR CURRENT (AMPS) hFE, DC CURRENT GAIN 10,000 7000 5000 3000 25°C -55°C 1000 700 500 300 100 0.015 0.03 0.05 0.07 0.1 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMPS) 1.0 1.5 5.0 1.0 dc 0.5 MJE270/MJE271 0.1 0.05 0.01 1.0 Figure 1. DC Current Gain BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 7.0 10 3.0 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Safe Operating Area http://onsemi.com 2 70 100 MJE270G (NPN), MJE271G (PNP) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 3: PIN 1. BASE 2., 4. COLLECTOR 3. EMITTER b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE270/D