MJE340G Plastic Medium-Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 300 Vdc VEB 3.0 Vdc Collector Current − Continuous IC 500 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 W mW/_C –65 to +150 _C Collector−Emitter Voltage Emitter−Base Voltage Operating and Storage Junction Temperature Range TJ, Tstg http://onsemi.com 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATTS SCHEMATIC COLLECTOR 2, 4 3 BASE 1 EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 6.25 _C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 300 − − 100 Unit TO−225 CASE 77−09 STYLE 1 1 2 3 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO MARKING DIAGRAM Vdc mAdc YWW JE340G mAdc − 100 ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) hFE 30 240 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 13 Y WW JE340 G − 1 = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJE340G TO−225 (Pb−Free) 500 Units/Box Publication Order Number: MJE340/D MJE340G 1.0 28 0.8 24 V, VOLTAGE (VOLTS) PD, POWER DISSIPATION (WATTS) 32 20 16 12 0.4 VCE(sat) @ IC/IB = 10 0.2 4.0 0 IC/IB = 5.0 0 20 40 80 120 60 100 TC, CASE TEMPERATURE (°C) 140 0 10 160 ACTIVE−REGION SAFE OPERATING AREA 10 ms 0.3 500 ms TJ = 150°C 1.0ms dc 0.2 0.1 0.05 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C SINGLE PULSE 0.03 0.02 0.01 10 20 30 50 70 100 200 30 50 100 200 IC, COLLECTOR CURRENT (mA) 300 500 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 0.5 20 Figure 2. “On” Voltages Figure 1. Power Temperature Derating IC, COLLECTOR CURRENT (AMP) VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V 0.6 MJE340 8.0 TJ = 25°C 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. MJE340 http://onsemi.com 2 10 7.0 5.0 2.0 TJ = 25°C 150°C 1.6 VCE = 1.0 Vdc 3.0 VOLTAGE (VOLTS) hFE, DC CURRENT GAIN, NORMALIZED MJE340G 2.0 -55°C 1.0 0.7 0.5 0.3 TJ = 25°C 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. DC Current Gain 1.0 0.7 0.5 0.3 Figure 5. “On” Voltage D = 0.5 0.2 0.2 0.05 0.02 0.03 P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 2.0 3.0 4.0 0.01 t1 t2 DUTY CYCLE, D = t1/t2 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 0.5 20 50 100 500 200 1000 Figure 6. Thermal Response 300 hFE , DC CURRENT GAIN 200 VCE = 10 V VCE = 2.0 V TJ = 150°C 100 70 +100°C 50 +25°C 30 20 10 -55°C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 7. DC Current Gain http://onsemi.com 3 70 100 200 300 500 MJE340G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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