MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features • • • • • • SC−70 (SOT−323) CASE 419 STYLE 3 High hFE, 210 −460 Low VCE(sat), < 0.5 V Moisture Sensitivity Level 1 ESD Protection: ♦ Human Body Model > 4000 V ♦ Machine Model > 400 V NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Collector Current − Peak THERMAL CHARACTERISTICS Characteristic 1 BASE 2 EMITTER MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C) Collector Current − Continuous COLLECTOR 3 ZR M G G 1 ZR M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MSD1819A−RT1G SC−70 (Pb−Free) 3,000 / Tape & Reel NSVMSD1819A−RT1G SC−70 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 10 1 Publication Order Number: MSD1819A−RT1/D MSD1819A−RT1G, NSVMSD1819A−RT1G ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Characteristic V(BR)CEO 50 − Vdc Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 − Vdc Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO − 0.1 mA Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO − 0.1 mA DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) hFE1 hFE2 210 90 340 − − 0.5 − Collector-Emitter Saturation Voltage (Note 2) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. 0.30 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 200 150 100 50 RqJA = 833°C/W 0 −50 IC/IB = 10 0.25 0.20 150°C 0.15 0.10 25°C −55°C 0.05 0 0 50 100 150 0.0001 0.001 0.01 0.1 TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1 450 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C (10 V) hFE, DC CURRENT GAIN 400 150°C (2 V) 350 300 25°C (10 V) 250 25°C (2 V) 200 −55°C (10 V) 150 −55°C (2 V) 100 50 0 IC/IB = 10 0.95 −55°C 0.85 25°C 0.75 0.65 150°C 0.55 0.45 0.35 0.25 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 2 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 1 mA TA = 25°C 1.0 10 mA IC = 100 mA 50 mA 0.8 0.6 0.4 0.2 500 mA 0 0.000001 0.00001 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Collector Saturation Region 6.0 Cobo, OUTPUT CAPACITANCE (pF) 18 17 16 15 14 Cibo (pF) 13 12 11 10 9 8 7 0 1 2 3 4 5 6 5.5 5.0 4.5 4.0 Cobo (pF) 3.5 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 25 30 Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 1 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) VBE(on), BASE−EMITTER TURN ON VOLTAGE (V) MSD1819A−RT1G, NSVMSD1819A−RT1G 1.0 ms 100 ms 0.1 10 ms 1.0 s 0.01 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Safe Operating Area www.onsemi.com 3 100 35 40 MSD1819A−RT1G, NSVMSD1819A−RT1G PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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