ONSEMI MSD1819A-RT1

MSD1819A-- RT1
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
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COLLECTOR
3
Features




High hFE, 210 -- 460
Low VCE(sat), < 0.5 V
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
Machine Model > 400 V
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
3
1
2
MAXIMUM RATINGS (TA = 25C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Collector Current -- Continuous
Collector Current -- Peak
SC--70 (SOT--323)
CASE 419
STYLE 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Power Dissipation (Note 1)
Characteristic
PD
150
mW
Junction Temperature
TJ
150
C
Storage Temperature Range
Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
ZR M G
G
1
ZR = Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MSD1819A--RT1G
Package
Shipping†
SC--70/
SOT--323
(Pb--Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1
Publication Order Number:
MSD1819A--RT1/D
MSD1819A--RT1
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
Characteristic
V(BR)CEO
50
--
Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
--
Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0)
V(BR)EBO
7.0
--
Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
--
0.1
mA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
ICEO
--
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
90
340
--
VCE(sat)
--
0.5
Collector-Emitter Saturation Voltage (Note 2)
(IC = 100 mAdc, IB = 10 mAdc)
--
Vdc
2. Pulse Test: Pulse Width  300 ms, D.C.  2%.
VCE(sat), COLLECTOR--EMITTER
SATURATION VOLTAGE (V)
0.30
200
150
100
50
RθJA = 833C/W
0
--50
0
50
150C
0.15
0.10
25C
--55C
0.05
0
150
0.0001
0.001
0.01
0.1
Figure 1. Derating Curve
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
150C (10 V)
150C (2 V)
350
300
25C (10 V)
250
25C (2 V)
200
--55C (10 V)
150
--55C (2 V)
100
50
0.0001
0.20
IC, COLLECTOR CURRENT (A)
400
0
IC/IB = 10
0.25
TA, AMBIENT TEMPERATURE (C)
450
hFE, DC CURRENT GAIN
100
VBE(sat), BASE--EMITTER SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
250
0.001
0.01
0.1
--55C
0.85
25C
0.75
0.65
150C
0.55
0.45
0.35
0.25
1
IC/IB = 10
0.95
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
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2
1
1
VCE, COLLECTOR--EMITTER VOLTAGE (V)
1.0
0.9
--55C
0.8
0.7
25C
0.6
0.5
150C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
1 mA
TA = 25C
1.0
10 mA
IC = 100 mA
50 mA
0.8
0.6
0.4
0.2
0
500 mA
0.000001
0.00001
0.0001
0.001
0.01
IB, BASE CURRENT (A)
Figure 5. Base Emitter Turn--On Voltage vs.
Collector Current
Figure 6. Collector Saturation Region
18
17
6.0
16
15
14
Cibo (pF)
13
12
11
10
9
8
7
1.2
IC, COLLECTOR CURRENT (A)
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
VBE(on), BASE--EMITTER TURN ON VOLTAGE (V)
MSD1819A--RT1
0
1
2
3
4
5
6
5.5
5.0
4.5
4.0
Cobo (pF)
3.5
3.0
2.5
2.0
1.5
1.0
0
5
10
15
20
25
30
Veb, EMITTER BASE VOLTAGE (V)
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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3
35
40
MSD1819A--RT1
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
c
A2
MIN
0.80
0.00
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
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or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
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For additional information, please contact your local
Sales Representative
MSD1819A--RT1/D