Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s • • • Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)180 V (--)160 V (--)6 V Collector Current VEBO IC (--)1.5 A Collector Current (Pulse) ICP (--)2.5 Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 500 When mounted on ceramic substrate (250mm2×0.8mm) A mW 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.0 2.5 1.5 1 2 4.0 1.6 3 0.4 2SA1419S-TD-E 2SA1419S-TD-H 2SA1419T-TD-E 2SA1419T-TD-H 2SC3649S-TD-E 2SC3649S-TD-H 2SC3649T-TD-E 2SC3649T-TD-H Packing Type: TD TD Marking 3.0 RANK RANK 2SA1419 0.75 2SC3649 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. AE 1.5 CE 0.5 LOT No. 0.4 PCP Semiconductor Components Industries, LLC, 2013 August, 2013 1 2 1 3 2SA1419 3 2SC3649 82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7 2SA1419 / 2SC3649 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain VCE=(--)5V, IC=(--)100mA VCE=(--)5V, IC=(--)10mA fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 100* max Unit (--)1 μA (--)1 μA 400* 80 120 VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)50mA V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage typ VCE=(--)10V, IC=(--)50mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings min VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A hFE2 Gain-Bandwidth Product Conditions IC=(--)500mA, IB=(--)50mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. MHz (22)14 pF (--200)130 (--500)450 (--)0.85 (--)1.2 mV V (--)180 V (--)160 V (--)6 V (40)40 ns (0.7)1.2 μs (40)80 ns * : The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT RB RL VR 50Ω + 100μF + 470μF --5V 100V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) Ordering Information Package Shipping memo 2SA1419S-TD-E Device PCP 1,000pcs./reel Pb Free 2SA1419S-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SA1419T-TD-E PCP 1,000pcs./reel Pb Free 2SA1419T-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC3649S-TD-E PCP 1,000pcs./reel Pb Free 2SC3649S-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC3649T-TD-E PCP 1,000pcs./reel Pb Free 2SC3649T-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free No.2007-2/7 2SA1419 / 2SC3649 IC -- VCE --1.8 2SC3649 --1.6 1.6 --0.6 A --80m A --60m A m 0 4 -A --20m A m --10 --5mA --0.4 --2mA --1.2 --1.0 --0.8 1.2 1.0 0.6 --1 --2 --3 1mA 0.2 IB=0mA --4 0 --5 Collector-to-Emitter Voltage, VCE -- V 0 1 --2.0mA --0.4 --1.5mA --1.0mA A m mA 2SC3649 2.5mA 2.0mA 1.5mA 0.4 1.0mA 0.2 --0.5mA 50 ITR03574 IC -- VBE Collector Current, IC -- A Ta=75°C 25°C --25°C 5 Ta= 7 0.4 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 ITR03576 hFE -- IC 1000 2SC3649 VCE=5V 7 5 3 Ta=75°C 2 25°C 100 --25°C 7 5 3 3 2 2 --5 --7--0.01 --2 --3 --5 --7--0.1 --2 --3 --5 --7 --1.0 --2 --3 ITR03577 Collector Current, IC -- A 5°C 25°C --25°C 0.8 DC Current Gain, hFE Collector Current, IC -- A Ta= 75° C 25°C --25°C 2SA1419 VCE=--5V 5 10 40 1.2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03575 7 7 30 2SC3649 VCE=5V hFE -- IC 100 20 1.6 2SA1419 VCE=--5V 0 10 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --0.4 2 IB=0mA 0 ITR03573 --0.8 3 0 --50 --1.2 1000 DC Current Gain, hFE 0.5mA IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 0 5 ITR03572 3.0mA 0.6 --0.2 --1.6 4 4.0mA 3.5mA 4.5 0.8 Collector Current, IC -- A Collector Current, IC -- A 2SA1419 --0.6 3 IC -- VCE 1.0 A --5.0m m --4.5 A --4.0mA --3.5mA --3.0mA --2.5mA --0.8 2 Collector-to-Emitter Voltage, VCE -- V ITR03571 IC -- VCE --1.0 2mA 0.4 IB=0mA 0 0 10mA 5mA 0.8 --1mA --0.2 50mA 40mA 30mA 20mA 1.4 5.0 --1.4 Collector Current, IC -- A Collector Current, IC -- A IC -- VCE 1.8 2SA1419 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03578 No.2007-3/7 2SA1419 / 2SC3649 f T -- IC 5 Cob -- VCB 100 2SA1419 / 2SC3649 7 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 2SA1419 / 2SC3649 2SC3649 2 2SA1419 100 7 5 3 2 5 2SA 141 9 3 2 2SC 364 9 10 7 5 For PNP, minus sign is omitted For PNP, minus sign is omitted 10 0.01 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 2 25°C --100 °C Ta=75 5 --25°C 3 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 7 25°C 3 5 75°C 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 DC 3 2 tio n For PNP, minus sign is omitted Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 2 3 5 7 10 2 --25°C 7 0.01 2 3 5 7 0.1 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 3 5 7 1.0 3 VBE(sat) -- IC 2SC3649 IC / IB=10 5 3 2 Ta=--25°C 1.0 7 5 25°C 7 0.01 2 3 5 7 0.1 75°C 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR03584 PC -- Ta M 1.4 ou nt 1.2 ed on ac er 1.0 am ic 0.8 bo ar d( 25 0.6 No h 0.4 0m m2 ✕ 0.8 eat s ink 0.2 2 2 ITR03582 2SA1419 / 2SC3649 era 7 1.0 Ta=75°C 5 1.6 3 2 0.01 7 5 25°C 7 1.8 op 0.1 7 5 100 ITR03583 2SA1419 / 2SC3649 1m 10 s m s 10 0m s 1.0 7 5 2 3 3 ASO ICP=2.5A IC=1.5A 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Ta=--25°C 5 5 7 --1.0 7 100 ITR03580 2SC3649 IC / IB=10 10 2 3 2 5 7 2 3 Collector Dissipation, PC -- W Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 5 Collector Current, IC -- A --1.0 5 2 3 VCE(sat) -- IC ITR03581 7 --0.01 2 10 3 2SA1419 IC / IB=10 7 7 1000 VBE(sat) -- IC --10 3 5 2 --1000 7 3 3 2SA1419 IC / IB=10 2 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 2 3 1.0 2 1.0 ITR03579 3 ITR03585 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C m m ) 140 160 ITR03586 No.2007-4/7 2SA1419 / 2SC3649 Bag Packing Specification 2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H No.2007-5/7 2SA1419 / 2SC3649 Outline Drawing Land Pattern Example 2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H Mass (g) Unit 0.058 mm Unit: mm * For reference 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2007-6/7 2SA1419 / 2SC3649 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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