SANYO 2SC3648

2SA1418 / 2SC3648
Ordering number : EN1788B
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1418 / 2SC3648
High-Voltage Switching,
Preriver Applications
Applications
•
Color TV audio output, inverter.
Features
•
•
•
•
Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SA1418
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
(--)180
(--)160
V
(--)6
V
Collector Current
VEBO
IC
(--)0.7
A
Collector Current (Pulse)
ICP
(--)1.5
A
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
500
Mounted on a ceramic board (250mm2✕0.8mm)
V
mW
1.3
W
150
°C
--55 to +150
°C
Marking 2SA1418 : AD
2SC3648 : CD
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
31010CB TK IM / O3103TN (KT)/71598HA (KT)/3277KI/2255MW, TS No.1788-1/5
2SA1418 / 2SC3648
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)120V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
hFE1
VCE=(--)5V, IC=(--)100mA
hFE2
VCE=(--)5V, IC=(--)10mA
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)250mA, IB=(--)25mA
(--0.2)0.12
(--0.5)0.4
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)250mA, IB=(--)25mA
(--)0.85
(--)1.2
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)160
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
Turn-ON Time
ton
See specified Test Circuit.
(60)50
Storage Time
tstg
See specified Test Circuit.
(900)1000
ns
Fall Time
tf
See specified Test Circuit.
(60)60
ns
DC Current Gain
100*
400*
90
120
MHz
(11)8
(--)6
pF
V
V
V
ns
*: The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows:
Rank
R
S
T
hFE
100 to 200
Package Dimensions
140 to 280
200 to 400
Switching Time Test Circuit
unit : mm (typ)
7007B-004
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
RB
VR
333Ω
50Ω
+
100μF
+
470μF
--5V
100V
IC=20IB1=--20IB2=300mA
(For PNP, the polarity is reversed)
No.1788-2/5
2SA1418 / 2SC3648
IC -- VCE
--800
From top
--200mA
--180mA
--160mA
--140mA
--600
--120mA
mA
--100
--80mA
--60mA
--500
--40mA
--400
--20mA
--300
--200
--100
2SC3648
From top
100mA
90mA
80mA
70mA
60mA
700
Collector Current, IC -- mA
Collector Current, IC -- mA
--700
IC -- VCE
800
2SA1418
600
500
50mA
40mA
30mA
20mA
400
10mA
300
200
100
IB=0mA
0
0
--200
--400
--600
--800
Collector-to-Emitter Voltage, VCE -- mV
200
400
600
800
1000
Collector-to-Emitter Voltage, VCE -- mV
ITR03558
IC -- VCE
--800
IB=0mA
0
0
--1000
ITR03559
IC -- VCE
1000
2SA1418
2SC3648
--400
--1.5mA
--300
--1.0mA
--200
--0.5mA
--100
--10
--20
--30
--40
--50
--60
--70
Collector-to-Emitter Voltage, VCE -- V
8
141
3648
2SA
2SC
Collector Current, IC -- mA
600
400
A
1.5mA
1.0mA
200
IB=0mA
10
200
20
30
40
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
5
2
1.0
7
5
3
8
41
1
SA
2
2
0.1
7
5
For PNP, minus sign is omitted
3
5
7
10
2
3
5
7 100
2
3
5
7 1000
2
ITR03563
hFE -- IC
1000
2SC3648
Pulse
7
5
3
5
3
2
10
10
7
7
5
5
5
7
--10
2 3
5 7 --100
2 3
Collector Current, IC -- mA
5
7 --1000
2
ITR03564
10V
2
7
V
3
100
5V
5
--10V
--5V
7
=2
E
100
2
VC
DC Current Gain, hFE
2
2V
=-V CE
DC Current Gain, hFE
8
364
2SC
Collector Current, IC -- mA
3
3
3
80
ITR03561
2SA1418 / 2SC3648
IC / IB=10
ITR03562
2SA1418
Pulse
7
70
3
2
1.2
hFE -- IC
1000
60
VCE(sat) -- IC
10
7
5
3
0
50
Collector-to-Emitter Voltage, VCE -- V
ITR03560
2SA1418 / 2SC3648
VCE=5V
For PNP, minus sign is omitted
800
2.0mA
400
0
0
--80
IC -- VBE
1000
600
A
3.5m
3.0mA
2.5mA
0.5mA
IB=0mA
0
0
0m
--500
800
4.
Collector Current, IC -- mA
A
.0m -4.5mA
A
--4.0m
A
m
--3.5
A
--3.0m
.5
2
-- mA
--2.0mA
--5
--600
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
--700
3
3
5
7 10
2
3
5
7 100
2
3
Collector Current, IC -- mA
5
7 1000
2
ITR03565
No.1788-3/5
2SA1418 / 2SC3648
f T -- IC
2
VCE=5V
10V
100
7
5
3
2
10
5
7
2
3
5 7 --100
2
3
Collector Current, IC -- mA
--10
7 --1000
ITR03566
2SA
141
10
7
2SC
8
364
5
8
3
2
For PNP, minus sign is omitted
1.0
1.0
2
3
5
7
2
10
3
5
7 100
2
ITR03568
Collector-to-Base Voltage, VCB -- V
PC -- Ta
1.8
5V
7
5
3
2
5
7
2
10
3
5
7
2
100
3
5
7 1000
ITR03567
1.0
7
5
ASO
2SA1418 / 2SC3648
ICP=1.5A
IC=0.7A
10
0m
s
3
2
DC
op
era
0.1
tio
n
7
5
3
2
s
1m
s
m
10
2
10V
V CE=
100
3
2
5
3
2
Collector Current, IC -- mA
2SA1418 / 2SC3648
f=1MHz
7
2SC3648
3
10
5
Cob -- VCB
100
Output Capacitance, Cob -- pF
Gain-Brandwidth Product, f T -- MHz
3
f T -- IC
5
2SA1418
Collector Current, IC -- A
Gain-Brandwidth Product, f T -- MHz
5
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
For PNP, minus sign is omitted
0.01
7
5
1.0
2
3
5
7
10
2
3
5
7
100
Collector-to-Emitter Voltage, VCE -- V
2
3
ITR03570
Collector Dissipation, PC -- W
1.6
1.4
M
ou
1.2
nte
do
na
1.0
ce
ram
0.8
ic
bo
ard
0.6
No h
(2
50
mm
eat s
0.4
ink
✕0
.8
mm
0.2
0
2
)
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR03569
No.1788-4/5
2SA1418 / 2SC3648
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.1788-5/5