2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1418 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)180 (--)160 V (--)6 V Collector Current VEBO IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage 500 Mounted on a ceramic board (250mm2✕0.8mm) V mW 1.3 W 150 °C --55 to +150 °C Marking 2SA1418 : AD 2SC3648 : CD Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010CB TK IM / O3103TN (KT)/71598HA (KT)/3277KI/2255MW, TS No.1788-1/5 2SA1418 / 2SC3648 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)120V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 μA hFE1 VCE=(--)5V, IC=(--)100mA hFE2 VCE=(--)5V, IC=(--)10mA Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA Output Capacitance Cob VCB=(--)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)250mA, IB=(--)25mA (--0.2)0.12 (--0.5)0.4 Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)250mA, IB=(--)25mA (--)0.85 (--)1.2 Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)160 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A Turn-ON Time ton See specified Test Circuit. (60)50 Storage Time tstg See specified Test Circuit. (900)1000 ns Fall Time tf See specified Test Circuit. (60)60 ns DC Current Gain 100* 400* 90 120 MHz (11)8 (--)6 pF V V V ns *: The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 Package Dimensions 140 to 280 200 to 400 Switching Time Test Circuit unit : mm (typ) 7007B-004 IB1 PW=20μs D.C.≤1% IB2 INPUT RB VR 333Ω 50Ω + 100μF + 470μF --5V 100V IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) No.1788-2/5 2SA1418 / 2SC3648 IC -- VCE --800 From top --200mA --180mA --160mA --140mA --600 --120mA mA --100 --80mA --60mA --500 --40mA --400 --20mA --300 --200 --100 2SC3648 From top 100mA 90mA 80mA 70mA 60mA 700 Collector Current, IC -- mA Collector Current, IC -- mA --700 IC -- VCE 800 2SA1418 600 500 50mA 40mA 30mA 20mA 400 10mA 300 200 100 IB=0mA 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV 200 400 600 800 1000 Collector-to-Emitter Voltage, VCE -- mV ITR03558 IC -- VCE --800 IB=0mA 0 0 --1000 ITR03559 IC -- VCE 1000 2SA1418 2SC3648 --400 --1.5mA --300 --1.0mA --200 --0.5mA --100 --10 --20 --30 --40 --50 --60 --70 Collector-to-Emitter Voltage, VCE -- V 8 141 3648 2SA 2SC Collector Current, IC -- mA 600 400 A 1.5mA 1.0mA 200 IB=0mA 10 200 20 30 40 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 5 2 1.0 7 5 3 8 41 1 SA 2 2 0.1 7 5 For PNP, minus sign is omitted 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 ITR03563 hFE -- IC 1000 2SC3648 Pulse 7 5 3 5 3 2 10 10 7 7 5 5 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 7 --1000 2 ITR03564 10V 2 7 V 3 100 5V 5 --10V --5V 7 =2 E 100 2 VC DC Current Gain, hFE 2 2V =-V CE DC Current Gain, hFE 8 364 2SC Collector Current, IC -- mA 3 3 3 80 ITR03561 2SA1418 / 2SC3648 IC / IB=10 ITR03562 2SA1418 Pulse 7 70 3 2 1.2 hFE -- IC 1000 60 VCE(sat) -- IC 10 7 5 3 0 50 Collector-to-Emitter Voltage, VCE -- V ITR03560 2SA1418 / 2SC3648 VCE=5V For PNP, minus sign is omitted 800 2.0mA 400 0 0 --80 IC -- VBE 1000 600 A 3.5m 3.0mA 2.5mA 0.5mA IB=0mA 0 0 0m --500 800 4. Collector Current, IC -- mA A .0m -4.5mA A --4.0m A m --3.5 A --3.0m .5 2 -- mA --2.0mA --5 --600 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- mA --700 3 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 2 ITR03565 No.1788-3/5 2SA1418 / 2SC3648 f T -- IC 2 VCE=5V 10V 100 7 5 3 2 10 5 7 2 3 5 7 --100 2 3 Collector Current, IC -- mA --10 7 --1000 ITR03566 2SA 141 10 7 2SC 8 364 5 8 3 2 For PNP, minus sign is omitted 1.0 1.0 2 3 5 7 2 10 3 5 7 100 2 ITR03568 Collector-to-Base Voltage, VCB -- V PC -- Ta 1.8 5V 7 5 3 2 5 7 2 10 3 5 7 2 100 3 5 7 1000 ITR03567 1.0 7 5 ASO 2SA1418 / 2SC3648 ICP=1.5A IC=0.7A 10 0m s 3 2 DC op era 0.1 tio n 7 5 3 2 s 1m s m 10 2 10V V CE= 100 3 2 5 3 2 Collector Current, IC -- mA 2SA1418 / 2SC3648 f=1MHz 7 2SC3648 3 10 5 Cob -- VCB 100 Output Capacitance, Cob -- pF Gain-Brandwidth Product, f T -- MHz 3 f T -- IC 5 2SA1418 Collector Current, IC -- A Gain-Brandwidth Product, f T -- MHz 5 Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP, minus sign is omitted 0.01 7 5 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 3 ITR03570 Collector Dissipation, PC -- W 1.6 1.4 M ou 1.2 nte do na 1.0 ce ram 0.8 ic bo ard 0.6 No h (2 50 mm eat s 0.4 ink ✕0 .8 mm 0.2 0 2 ) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03569 No.1788-4/5 2SA1418 / 2SC3648 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.1788-5/5