2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)120 Collector-to-Emitter Voltage VCEO (--)100 V Emitter-to-Base Voltage VEBO (--)6 V IC ICP (--)2 A Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm2✕0.8mm) V (--)3 A 500 mW 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitterr Saturation Voltage VBE(sat) Conditions VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA VCE=(--)10V, IC=(--)100mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)100mA IC=(--)1A, IB=(--)100mA Ratings min typ max 100* Unit (--)100 nA (--)100 nA 400* 120 MHz (25)16 pF (--0.22)0.13 (--0.6)0.4 V (--)0.85 (--)1.2 V Continued on next page. * ; The 2SA1417 / 2S3647 are classified by 100mA hFE as follws: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Marking 2SA1417: AC 2SC3647: CC Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22006EA MS IM / O3103TN (KT) / 71598HA (KT) / 3277KI / N255MW, TS No.2006-1/5 2SA1417 / 2SC3647 Continued from preceding page. Parameter Symbol Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A See specified Test Circuit. Turn-On Time ton tstg tf Storage Time Fall Time Ratings Conditions min typ Unit max (--)120 V (--)100 V (--)6 V (80)80 ns See specified Test Circuit. (750)1000 ns See specified Test Circuit. (40)50 ns Package Dimensions unit : mm 7007A-004 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% Top View OUTPUT IB2 4.5 INPUT 1.5 1.6 VR RB 100µF 4.0 2.5 1.0 2 + + 50Ω 1 RL 470µF VBE= --5V 3 0.4 VCC=50V 10IB1= --10IB2=IC=0.7A For PNP, the polarity is reversed. 0.4 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Bottom View IC -- VCE --2.0 2SC3647 Collector Current, IC -- A Collector Current, IC -- A --1.6 --10mA --1.2 --5mA --0.8 --3mA --2mA --1mA --0.4 0 0 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V A 50m 1.6 40mA 30mA 20mA 10mA 1.2 5mA 0.8 3mA 2mA 0.4 1mA IB=0mA --1 IC -- VCE 2.0 A A 0m 0m --4 --3 A --20m 2SA1417 IB=0mA 0 --5 ITR03542 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V ITR03543 No.2006-2/5 2SA1417 / 2SC3647 IC -- VCE mA A --5m --0.8 --4mA Collector Current, IC -- A Collector Current, IC -- A --6 IC -- VCE 1.0 2SA1417 5.0 mA --1.0 --3mA --0.6 --2mA --0.4 --1mA 2SC3647 5mA 4. 4.0mA 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 --0.2 0.5mA 0 0 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 40 50 ITR03545 IC -- VBE 2.4 2SC3647 VCE=5V °C 25°C --25°C --1.2 --0.8 1.6 1.2 °C 25°C --25°C --1.6 0.8 Ta=7 5 Collector Current, IC -- A 2.0 Ta=7 5 Collector Current, IC -- A 30 2SA1417 VCE= --5V --0.4 0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03546 0 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 2SC3647 VCE=5V 7 5 1.2 ITR03547 hFE -- IC 1000 2SA1417 VCE= --5V 7 0.2 0 hFE -- IC 1000 DC Current Gain, hFE 5 Ta=75°C 3 25°C 2 --25°C 100 3 100 7 5 5 3 --7--0.01 --2 --3 --5 --7 --0.1 --2 --3 --5 --7 --1.0 Collector Current, IC -- A 3 --2 --3 7 0.01 1 2SA 7 5 7 0.1 2 3 2SC 5 3 2 7 1.0 2 3 ITR03549 2SA1417 / 2SC3647 f=1MHz 7 7 364 5 Cob -- VCB 100 417 100 3 Collector Current, IC -- A 2SA1417 / 2SC3647 VCE=10V 2 2 ITR03548 f T -- IC 3 Ta=75°C 25°C --25°C 2 7 Output Capacitance, Cob -- pF DC Current Gain, hFE 20 Collector-to-Emitter Voltage, VCE -- V --2.0 Gain-Bandwidth Product, f T -- MHz 10 ITR03544 IC -- VBE --2.4 IB=0mA 0 --50 5 2SA 3 141 7 2SC 364 7 2 10 7 5 10 For PNP minus sign is omitted. 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03550 3 7 For PNP minus sign is omitted. 1.0 2 3 5 7 10 2 3 5 7 100 2 ITR03551 Collector-to-Base Voltage, VCB -- V No.2006-3/5 2SA1417 / 2SC3647 VCE(sat) -- IC 7 5 3 2 --100 7 75° Ta= 5 C 25° C 3 2 --25°C --10 3 2 --0.01 5 --0.1 2 3 5 Collector Current, IC -- A 7 7 --1.0 2 5 3 2 100 25°C Tc=75°C 7 5 3 2 3 --25°C 7 0.01 3 2 25°C 7 5 75°C 2 3 5 7 1.0 2 3 ITR03553 VBE(sat) -- IC 2SC3647 IC / IB=10 5 3 2 Ta= --25°C 25°C 1.0 7 5 75°C 3 3 7 --0.01 2 3 5 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 7 0.01 3 1m 2SA1417 / 2SC3647 10 s m s 10 0m s 1.0 7 5 DC op era 3 2 tio n 0.1 7 5 3 For PNP minus sign is omitted. Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) 2 0.01 7 5 5 7 1.0 2 3 5 7 10 2 3 3 5 Collector-to-Emitter Voltage, VCE -- 7 100 2 V ITR03556 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A ASO ICP=3A IC=2A 2 ITR03554 2 3 ITR03555 PC -- Ta 1.8 Collector Dissipation, PC -- W 3 2 7 0.1 7 5 5 5 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 Ta= --25°C 3 Collector Current, IC -- A 2SA1417 IC / IB=10 --1.0 2 ITR03552 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SC3647 IC / IB=10 7 10 7 Collector Current, IC -- A VCE(sat) -- IC 1000 2SA1417 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 2SA1417 / 2SC3647 1.6 1.5 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d( 25 0.6 0.5 0.4 0m m2 ✕ Infin ite h 0.8 eat s m ink m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10757 No.2006-4/5 2SA1417 / 2SC3647 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No.2006-5/5