2SA2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • • • • • • • Reduces Board Space High hFE, 210 −460 (Typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 4 mm, 8000 / Tape & Reel NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices www.onsemi.com PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc Collector−Emitter Voltage V(BR)CEO −50 Vdc Emitter−Base Voltage V(BR)EBO −6.0 Vdc IC −100 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 265 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C Collector Current − Continuous 1 BASE 2 EMITTER MARKING DIAGRAM SOT−723 CASE 631AA THERMAL CHARACTERISTICS Rating F9 M 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. F9 = Specific Device Code M = Date Code ORDERING INFORMATION Package Shipping† 2SA2029M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSV2SA2029M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 October, 2015 − Rev. 5 1 Publication Order Number: 2SA2029M3/D 2SA2029M3 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc ICBO − − −0.5 nA IEBO − − −0.1 Characteristic Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0) Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) − − −0.5 120 − 560 − 140 − − 3.5 − hFE Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) − fT Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) COB mA Vdc MHz pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 2SA2029M3 TYPICAL ELECTRICAL CHARACTERISTICS 1.2 IC/IB = 10 TA = 25°C TA = 150°C 0.1 IC/IB = 10 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 TA = −55°C 1 0.9 TA = −55°C 0.8 TA = 25°C 0.7 0.6 0.5 TA = 150°C 0.4 0.3 0.01 0.1 1.0 10 100 0.2 0.1 1000 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. Base−Emitter Saturation Voltage vs. Collector Current TA = 150°C TA = 25°C TA = −55°C 100 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 2.0 VCE = 6 V hFE, DC CURRENT GAIN 10 Figure 1. Collector−Emitter Saturation Voltage vs. Collector Current 1000 10 0.1 1.0 10 100 1000 TA = 25°C IC = 100 mA 1.8 IC = 50 mA 1.6 1.4 IC = 30 mA 1.2 1.0 IC = 10 mA 0.8 0.6 0.4 0.2 0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. DC Current Gain vs. Collector Current Figure 4. Saturation Region 1 100 100 VCE = 2 V 0.9 TA = −55°C 0.8 0.7 C, CAPACITANCE (pF) VBE(ON), BASE−EMITTER ON VOLTAGE (V) 1.0 TA = 25°C 0.6 0.5 TA = 150°C 0.4 Cibo 10 Cobo 0.3 0.2 0.1 1.0 10 100 1000 1 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 5. Base−Emitter Turn−ON Voltage vs. Collector Current Figure 6. Capacitance www.onsemi.com 3 100 2SA2029M3 TYPICAL ELECTRICAL CHARACTERISTICS 1000 VCE = −2 V TA = 25°C IC, COLLECTOR CURRENT (mA) ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 100 ms 100 10 ms 1s 10 1 1.0 Figure 7. Current Gain Bandwidth Product vs. Collector Current Thermal Limit Single Pulse Test at TA = 25°C 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. Safe Operating Area www.onsemi.com 4 100 2SA2029M3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e C 0.08 X Y SIDE VIEW TOP VIEW 3X DIM A b b1 C D E e HE L L2 L 1 3X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 RECOMMENDED SOLDERING FOOTPRINT* L2 BOTTOM VIEW 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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