2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT Features • • • • • • • Reduces Board Space High hFE, 210 −460 (typical) Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V Available in 8 mm, 7−inch/3000 Unit Tape and Reel NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc IC 150 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 260 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C Collector Current − Continuous 3 2 SOT−723 CASE 631AA XXM 1 THERMAL CHARACTERISTICS Rating MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. XX (B9 RM M = Specific Device Code = 2SC5658M3T5G = 2SC5658RM3T5G) = Date Code ORDERING INFORMATION Package Shipping† 2SC5658M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel 2SC5658RM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSV2SC5658M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 5 1 Publication Order Number: 2SC5658M3/D 2SC5658M3T5G, 2SC5658RM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 7.0 − − Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) IEBO − − 0.5 mA − − 0.4 120 215 − − 560 375 fT − 180 − MHz COB − 2.0 − pF Collector-Emitter Saturation Voltage (Note 2) (IC = 50 mAdc, IB = 5.0 mAdc) DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) (VCE = 6.0 Vdc, IC = 1.0 mAdc) VCE(sat) hFE 2SC5658M3T5G 2SC5658RM3T5G Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) Vdc − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Include NSV−prefix devices where applicable. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 2SC5658M3T5G, 2SC5658RM3T5G TYPICAL ELECTRICAL CHARACTERISTICS 1 50 140 mA 40 120 mA 100 mA 30 80 mA 60 mA 20 40 mA 10 IB = 20 mA 2 4 6 8 100 1000 hFE, DC CURRENT GAIN 0.8 TA = 25°C 0.6 TA = 150°C VCE = 6 V TA = 150°C TA = 25°C TA = −55°C 100 0.3 1 10 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base Emitter Saturation Voltage vs. Collector Current 30 mA Figure 4. DC Current Gain vs. Collector Current 2.0 1.8 50 mA 1.4 30 mA 1.2 1.0 0.8 0.6 IC = 100 mA 10 mA 0.2 0 0.01 0.1 1 1 TA = 25°C 1.6 0.4 1000 VBE(ON), BASE−EMITTER ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 10 1000 TA = −55°C 0.2 0.1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 IC, COLLECTOR CURRENT (mA) 1 0.4 TA = −55°C Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 0.9 0.5 TA = 150°C Figure 1. IC − VCE IC/IB = 10 0.7 TA = 25°C VCE, COLLECTOR VOLTAGE (V) 1.2 1.1 0.1 0.01 0.1 0 0 IC/IB = 10 160 mA TA = 25°C VCE, COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 60 10 100 VCE = 2 V 0.9 TA = −55°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 0.1 1 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Saturation Region Figure 6. Base−Emitter Turn−ON Voltage vs. Collector Current http://onsemi.com 3 1000 1000 2SC5658M3T5G, 2SC5658RM3T5G TYPICAL ELECTRICAL CHARACTERISTICS ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 Cibo 10 Cobo 1 0.1 1 10 VCE = −2 V TA = 25°C 100 10 0.1 100 1 10 100 1000 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 7. Capacitance Figure 8. Current Gain Bandwidth Product vs. Collector Current 1000 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 100 ms 100 10 ms 10 s Thermal Limit 10 1 1 10 VCE, COLLECTOR REVERSE VOLTAGE (V) Figure 9. Safe Operating Area http://onsemi.com 4 100 2SC5658M3T5G, 2SC5658RM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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