NGTB25N120FL2WA D

NGTB25N120FL2WAG
IGBT - Field Stop II / 4 Lead
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
reduction in Eon Losses compared to standard TO−247−3L package.
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
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25 A, 1200 V
VCEsat = 2.0 V
Eon = 0.99 mJ
Features
•
•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Improved Gate Control Lowers Switching Losses
Separate Emitter Drive Pin
TO−247−4L for Minimal Eon Losses
Optimized for High Speed Switching
This is a Pb−Free Devices
C
G
E1
E
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Collector−emitter voltage
Value
Unit
VCES
1200
V
IC
100
25
A
ICM
100
A
IF
100
25
A
Diode pulsed current, Tpulse limited
by TJmax
IFM
100
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
±20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
385
192
W
Operating junction temperature range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
C
TO−247
CASE 340AR
4 LEAD
E
E1
G
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
25N120FL2
AYWWG
25N120FL2 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120FL2WAG
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB25N120FL2WA/D
NGTB25N120FL2WAG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
RqJC
0.39
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.64
°C/W
Thermal resistance junction−to−ambient
RqJA
25
°C/W
Thermal resistance junction−to−case, for IGBT
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 175°C
VCEsat
−
−
2.00
2.40
2.40
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
4.0
0.4
−
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
4243
−
pF
Coes
−
159
−
Cres
−
77
−
Qg
−
181
−
Qge
−
40
−
Qgc
−
87
−
td(on)
−
17
−
tr
−
19
−
td(off)
−
113
−
tf
−
118
−
Eon
−
0.99
−
Turn−off switching loss
Eoff
−
0.66
−
Total switching loss
Ets
−
1.65
−
Turn−on delay time
td(on)
−
15
−
Gate−emitter threshold voltage
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 25 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 50 A
Rg = 10 W
VGE = ±15V
Rise time
Turn−off delay time
Fall time
TJ = 175°C
VCC = 600 V, IC = 50 A
Rg = 10 W
VGE = ±15V
tr
−
19
−
td(off)
−
120
−
ns
mJ
ns
tf
−
193
−
Eon
−
1.2
−
Turn−off switching loss
Eoff
−
1.3
−
Total switching loss
Ets
−
2.5
−
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 175°C
VF
−
−
2.51
2.60
3.00
−
V
TJ = 25°C
IF = 25 A, VR = 400 V
diF/dt = 250 A/ms
trr
−
136
−
ns
mc
Turn−on switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
TJ = 175°C
IF = 25 A, VR = 400 V
diF/dt = 250 A/ms
Reverse recovery current
Qrr
−
0.6
−
Irrm
−
8.4
−
A
trr
−
251
−
ns
Qrr
−
1.91
−
mc
Irrm
−
14
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
100
VGE = 20 V − 13 V
TJ = 25°C
90
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
80
70
60
11 V
50
40
10 V
30
20
9V
10
7V
8V
100
1
2
3
4
5
6
80
TJ = 150°C
70
60
11 V
50
40
10 V
30
9V
20
8V
10
7V
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
100
TJ = −55°C
70
60
11 V
50
40
10 V
30
20
9V
10
7 V and 8 V
0
1
2
3
4
5
6
7
VGE = 20 V − 15 V
90
13 V
70
TJ = 175°C
60
11 V
50
40
10 V
30
9V
20
8V
7V
10
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
90
TJ = 25°C
TJ = 175°C
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
8
80
8
100
0
2
VCE, COLLECTOR−EMITTER VOLTAGE (V)
80
0
1
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE =
20 V − 13 V
90
0
8
7
IC, COLLECTOR CURRENT (A)
0
IC, COLLECTOR CURRENT (A)
13 V
0
0
IC, COLLECTOR CURRENT (A)
VGE = 20 V − 15 V
90
18
3.5
IC = 50 A
3.0
2.5
IC = 25 A
2.0
IC = 15 A
1.5
1.0
−75 −50 −25
0
25
50
75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. VCE(sat) vs. TJ
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3
8
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
100
10,000
TJ = 25°C
90
IF, FORWARD CURRENT (A)
CAPACITANCE (pF)
Cies
TJ = 25°C
1000
Coes
100
Cres
80
TJ = 175°C
70
60
50
40
30
20
10
10
0
10
30
20
40
50
60
70
80
90
100
0
VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance
Figure 8. Diode Forward Characteristics
16
1.4
14
1.3
12
10
8
6
VCE = 600 V
VGE = 15 V
IC = 25 A
4
2
0
50
100
150
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1.2
1.1
Eon
1.0
0.9
Eoff
0.8
0.7
0.6
0.5
0.4
0
200
0
20
40
60
80
100 120 140 160 180 200
QG, GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge
Figure 10. Switching Loss vs. Temperature
6
1000
tf
100
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
0
td(off)
tr
td(on)
10
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
1
0
20
40
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
5
Eoff
4
3
Eon
2
1
0
60
80
100 120 140 160 180 200
10
20
30
40
50
60
70
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature
Figure 12. Switching Loss vs. IC
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80
90
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
7
1000
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 25 A
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
6
td(off)
tf
100
tr
td(on)
10
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10 W
1
10
20
30
5
4
3
2
0
40
50
60
70
80
5
90
10 15 20 25 30 35 40 45 50 55 60 65 70
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
2.25
td(off)
tf
tr
100
VGE = 15 V
TJ = 175°C
IC = 25 A
Rg = 10 W
2.00
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
Eoff
1
1000
td(on)
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 25 A
1.75
Eon
1.50
Eoff
1.25
1.00
0.75
0.50
10
5
350 400
10 15 20 25 30 35 40 45 50 55 60 65 70
450
500
550
600
650
700
750 800
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
1000
IC, COLLECTOR CURRENT (A)
1000
SWITCHING TIME (ns)
Eon
tf
td(off)
100
VGE = 15 V
TJ = 175°C
IC = 25 A
Rg = 10 W
tr
td(on)
10
350 400
450
100
dc operation
10
50 ms
1
0.1
500
550
600
650
700
750 800
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
10
1 ms
100
1K
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE
Figure 18. Safe Operating Area
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5
10K
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
280
trr, REVERSE RECOVERY TIME (ns)
IC, COLLECTOR CURRENT (A)
1000
100
10
VGE = 15 V, TC = 175°C
1
200
TJ = 175°C, IF = 25 A
160
120
80
TJ = 25°C, IF = 25 A
40
0
1
10
100
1K
10K
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area
Figure 20. trr vs. diF/dt
Irm, REVERSE RECOVERY CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
3.0
VR = 400 V
2.5
TJ = 175°C, IF = 25 A
2.0
1.5
1.0
TJ = 25°C, IF = 25 A
0.5
0
100
300
500
700
900
1100
VR = 400 V
40
TJ = 175°C, IF = 25 A
30
20
TJ = 25°C, IF = 25 A
10
0
100
300
500
700
900
diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt
Figure 22. Irm vs. diF/dt
4.5
4.0
IC = 50 A
3.5
3.0
IC = 25 A
2.5
IC = 15 A
2.0
1.5
1.0
−75 −50 −25
0
25
75 100 125 150 175 200
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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6
1100
50
diF/dt, DIODE CURRENT SLOPE (A/ms)
VF, FORWARD VOLTAGE (V)
Qrr, REVERSE RECOVERY CHARGE (mC)
VR = 400 V
240
1100
NGTB25N120FL2WAG
TYPICAL CHARACTERISTICS
120
VCE = 1200 V,
Rgate = 10 W,
VGE = 15 V
100
Ipk (A)
80
TC = 80°C
60
TC = 80°C
40
TC = 110°C
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.39
50% Duty Cycle
0.1 20%
10%
5%
0.01
2%
Junction R1
R2
Rn
C1
C2
Cn
0.001
0.0001
Ri (°C/W) Ci (J/W)
0.0000
0.0000
0.0931
0.0034
0.0559
0.0179
0.1139
0.0278
0.1187
0.0842
0.0079
3.9962
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Case
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
R(t), SQUARE−WAVE PEAK (°C/W)
1
RqJC = 0.64
50% Duty Cycle
20%
0.1 10%
Junction R1
R2
Rn
C1
C2
Cn
Case
5%
2%
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.01
0.000001
0.00001
Ri (°C/W) Ci (J/W)
0.000088
0.000667
0.001867
0.002362
0.004049
0.021008
0.086355
0.132519
0.180361
0.735876
0.011340
0.014990
0.016940
0.042332
0.078099
0.047602
0.036620
0.075461
0.175331
0.135892
0.0001
0.001
PULSE TIME (sec)
0.01
Figure 26. Diode Transient Thermal Impedance
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0.1
1
NGTB25N120FL2WAG
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
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8
NGTB25N120FL2WAG
Figure 29. Definition of Turn Off Waveform
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NGTB25N120FL2WAG
PACKAGE DIMENSIONS
TO−247 4−LEAD
CASE 340AR
ISSUE O
NOTE 3
A
P
E
B
0.635
M
B A
SEATING
PLANE
A
M
E1
NOTE 7
Q
S
E2
D
D1
NOTE 3
NOTE 6
1
2 3 4
L1
DIM
A
A1
b
b2
c
D
D1
E
E1
E2
e
L
L1
P
P1
Q
S
NOTE 4
L
4X
b2
2X
c
e
4X
e
b
0.25
A1
NOTE 5
M
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN­
SIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.
5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.
6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL.
∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5° TO
P1 7. DIAMETER
THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20.
M
MILLIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.10
1.30
1.30
1.50
0.50
0.70
20.80
21.10
16.25
17.65
15.75
16.13
13.06
13.46
4.32
4.83
2.54 BSC
19.90
20.30
4.00
4.40
3.50
3.70
7.00
7.40
5.59
6.20
6.15 BSC
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