NGTB25N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 25 A, 1200 V VCEsat = 2.0 V Eon = 0.99 mJ Features • • • • • • • Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO−247−4L for Minimal Eon Losses Optimized for High Speed Switching This is a Pb−Free Devices C G E1 E Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS Rating Symbol Collector−emitter voltage Value Unit VCES 1200 V IC 100 25 A ICM 100 A IF 100 25 A Diode pulsed current, Tpulse limited by TJmax IFM 100 A Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 385 192 W Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C C TO−247 CASE 340AR 4 LEAD E E1 G MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 25N120FL2 AYWWG 25N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NGTB25N120FL2WAG © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 0 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB25N120FL2WA/D NGTB25N120FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit RqJC 0.39 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.64 °C/W Thermal resistance junction−to−ambient RqJA 25 °C/W Thermal resistance junction−to−case, for IGBT ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 4.0 0.4 − mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 4243 − pF Coes − 159 − Cres − 77 − Qg − 181 − Qge − 40 − Qgc − 87 − td(on) − 17 − tr − 19 − td(off) − 113 − tf − 118 − Eon − 0.99 − Turn−off switching loss Eoff − 0.66 − Total switching loss Ets − 1.65 − Turn−on delay time td(on) − 15 − Gate−emitter threshold voltage Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 50 A Rg = 10 W VGE = ±15V Rise time Turn−off delay time Fall time TJ = 175°C VCC = 600 V, IC = 50 A Rg = 10 W VGE = ±15V tr − 19 − td(off) − 120 − ns mJ ns tf − 193 − Eon − 1.2 − Turn−off switching loss Eoff − 1.3 − Total switching loss Ets − 2.5 − VGE = 0 V, IF = 25 A VGE = 0 V, IF = 25 A, TJ = 175°C VF − − 2.51 2.60 3.00 − V TJ = 25°C IF = 25 A, VR = 400 V diF/dt = 250 A/ms trr − 136 − ns mc Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 175°C IF = 25 A, VR = 400 V diF/dt = 250 A/ms Reverse recovery current Qrr − 0.6 − Irrm − 8.4 − A trr − 251 − ns Qrr − 1.91 − mc Irrm − 14 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB25N120FL2WAG TYPICAL CHARACTERISTICS 100 VGE = 20 V − 13 V TJ = 25°C 90 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 80 70 60 11 V 50 40 10 V 30 20 9V 10 7V 8V 100 1 2 3 4 5 6 80 TJ = 150°C 70 60 11 V 50 40 10 V 30 9V 20 8V 10 7V 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 100 TJ = −55°C 70 60 11 V 50 40 10 V 30 20 9V 10 7 V and 8 V 0 1 2 3 4 5 6 7 VGE = 20 V − 15 V 90 13 V 70 TJ = 175°C 60 11 V 50 40 10 V 30 9V 20 8V 7V 10 0 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) 90 TJ = 25°C TJ = 175°C 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 16 8 80 8 100 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) 80 0 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 13 V 90 0 8 7 IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) 13 V 0 0 IC, COLLECTOR CURRENT (A) VGE = 20 V − 15 V 90 18 3.5 IC = 50 A 3.0 2.5 IC = 25 A 2.0 IC = 15 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 3 8 NGTB25N120FL2WAG TYPICAL CHARACTERISTICS 100 10,000 TJ = 25°C 90 IF, FORWARD CURRENT (A) CAPACITANCE (pF) Cies TJ = 25°C 1000 Coes 100 Cres 80 TJ = 175°C 70 60 50 40 30 20 10 10 0 10 30 20 40 50 60 70 80 90 100 0 VF, FORWARD VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics 16 1.4 14 1.3 12 10 8 6 VCE = 600 V VGE = 15 V IC = 25 A 4 2 0 50 100 150 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 1.2 1.1 Eon 1.0 0.9 Eoff 0.8 0.7 0.6 0.5 0.4 0 200 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 6 1000 tf 100 SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 td(off) tr td(on) 10 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 1 0 20 40 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 5 Eoff 4 3 Eon 2 1 0 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 4 80 90 NGTB25N120FL2WAG TYPICAL CHARACTERISTICS 7 1000 VCE = 600 V VGE = 15 V TJ = 175°C IC = 25 A SWITCHING LOSS (mJ) SWITCHING TIME (ns) 6 td(off) tf 100 tr td(on) 10 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 20 30 5 4 3 2 0 40 50 60 70 80 5 90 10 15 20 25 30 35 40 45 50 55 60 65 70 IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 2.25 td(off) tf tr 100 VGE = 15 V TJ = 175°C IC = 25 A Rg = 10 W 2.00 SWITCHING LOSS (mJ) SWITCHING TIME (ns) Eoff 1 1000 td(on) VCE = 600 V VGE = 15 V TJ = 175°C IC = 25 A 1.75 Eon 1.50 Eoff 1.25 1.00 0.75 0.50 10 5 350 400 10 15 20 25 30 35 40 45 50 55 60 65 70 450 500 550 600 650 700 750 800 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) 1000 SWITCHING TIME (ns) Eon tf td(off) 100 VGE = 15 V TJ = 175°C IC = 25 A Rg = 10 W tr td(on) 10 350 400 450 100 dc operation 10 50 ms 1 0.1 500 550 600 650 700 750 800 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 10 1 ms 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 5 10K NGTB25N120FL2WAG TYPICAL CHARACTERISTICS 280 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 200 TJ = 175°C, IF = 25 A 160 120 80 TJ = 25°C, IF = 25 A 40 0 1 10 100 1K 10K 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 3.0 VR = 400 V 2.5 TJ = 175°C, IF = 25 A 2.0 1.5 1.0 TJ = 25°C, IF = 25 A 0.5 0 100 300 500 700 900 1100 VR = 400 V 40 TJ = 175°C, IF = 25 A 30 20 TJ = 25°C, IF = 25 A 10 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.5 4.0 IC = 50 A 3.5 3.0 IC = 25 A 2.5 IC = 15 A 2.0 1.5 1.0 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 6 1100 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) VR = 400 V 240 1100 NGTB25N120FL2WAG TYPICAL CHARACTERISTICS 120 VCE = 1200 V, Rgate = 10 W, VGE = 15 V 100 Ipk (A) 80 TC = 80°C 60 TC = 80°C 40 TC = 110°C 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.39 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.0001 Ri (°C/W) Ci (J/W) 0.0000 0.0000 0.0931 0.0034 0.0559 0.0179 0.1139 0.0278 0.1187 0.0842 0.0079 3.9962 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Case 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.64 50% Duty Cycle 20% 0.1 10% Junction R1 R2 Rn C1 C2 Cn Case 5% 2% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.01 0.000001 0.00001 Ri (°C/W) Ci (J/W) 0.000088 0.000667 0.001867 0.002362 0.004049 0.021008 0.086355 0.132519 0.180361 0.735876 0.011340 0.014990 0.016940 0.042332 0.078099 0.047602 0.036620 0.075461 0.175331 0.135892 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 7 0.1 1 NGTB25N120FL2WAG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 8 NGTB25N120FL2WAG Figure 29. Definition of Turn Off Waveform www.onsemi.com 9 NGTB25N120FL2WAG PACKAGE DIMENSIONS TO−247 4−LEAD CASE 340AR ISSUE O NOTE 3 A P E B 0.635 M B A SEATING PLANE A M E1 NOTE 7 Q S E2 D D1 NOTE 3 NOTE 6 1 2 3 4 L1 DIM A A1 b b2 c D D1 E E1 E2 e L L1 P P1 Q S NOTE 4 L 4X b2 2X c e 4X e b 0.25 A1 NOTE 5 M B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMEN SIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 4. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 5. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. 6. NOTCHES ARE REQUIRED BUT THEIR SHAPE IS OPTIONAL. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 3.5° TO P1 7. DIAMETER THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 4.20. M MILLIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.10 1.30 1.30 1.50 0.50 0.70 20.80 21.10 16.25 17.65 15.75 16.13 13.06 13.46 4.32 4.83 2.54 BSC 19.90 20.30 4.00 4.40 3.50 3.70 7.00 7.40 5.59 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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