NGTG25N120FL2W D

NGTG25N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
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Features
•
•
•
•
•
25 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.60 mJ
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
100
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
A
50
25
G
E
MARKING DIAGRAM
385
192
10
ms
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
Operating junction temperature
range
TO−247
CASE 340AL
W
TSC
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G25N120FL2
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG25N120FL2WG
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTG25N120FL2W/D
NGTG25N120FL2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.39
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 175°C
VCEsat
−
−
2.00
2.40
2.40
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
0.4
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
4420
−
pF
Coes
−
151
−
Cres
−
81
−
Qg
−
178
−
Qge
−
39
−
Qgc
−
83
−
td(on)
−
87
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 25 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V*
tr
−
74
−
td(off)
−
179
−
tf
−
136
−
Eon
−
1.95
−
Eoff
−
0.60
−
Total switching loss
Ets
−
2.55
−
Turn−on delay time
td(on)
−
84
−
Turn−on switching loss
Turn−off switching loss
Rise time
tr
−
94
−
td(off)
−
185
−
tf
−
245
−
Eon
−
2.39
−
Turn−off switching loss
Eoff
−
1.26
−
Total switching loss
Ets
−
3.65
−
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V*
ns
mJ
ns
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB25N120FL2WG.
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NGTG25N120FL2WG
TYPICAL CHARACTERISTICS
100
VGE = 13 V
to 20 V
90
TJ = 25°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
80
70
11 V
60
50
10 V
40
30
9V
20
7V
10
0
8V
1
2
3
4
5
6
7
70
60
11 V
50
10 V
40
30
9V
20
8V
7V
10
0
8
1
2
3
4
5
7
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
45
100
VGE = 13 V
to 20 V
TJ = −55°C
IC, COLLECTOR CURRENT (A)
90
80
70
11 V
60
50
40
10 V
30
20
9V
10
0
8V
0
1
2
3
4
5
40
35
30
25
20
15
TJ = 150°C
10
TJ = 25°C
5
0
6
7
8
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
10,000
4.0
IC = 50 A
3.5
Cies
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 13 V
to 20 V
80
0
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
90
3.0
IC = 25 A
2.5
2.0
IC = 15 A
1.5
1.0
1000
Coes
100
Cres
10
TJ = 25°C
0.5
0
−75 −50 −25
0
25
50
1
75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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NGTG25N120FL2WG
TYPICAL CHARACTERISTICS
VGE, GATE−EMITTER VOLTAGE (V)
16
14
12
10
8
6
VCE = 600 V
VGE = 25 V
IC = 25 A
4
2
0
0
50
200
150
100
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
3.0
SWITCHING TIME (ns)
2.5
SWITCHING LOSS (mJ)
1000
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
Eon
2.0
1.5
Eoff
1.0
tf
td(off)
td(on)
100
tr
0.5
0
10
20
40
60
80
100
120
140
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Switching Loss vs. Temperature
Figure 9. Switching Time vs. Temperature
5
1000
Eon
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
0
160
3
SWITCHING TIME (ns)
0
SWITCHING LOSS (mJ)
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
Eoff
2
1
160
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tf
td(off)
100
td(on)
tr
0
0
10
20
30
40
50
10
60
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. Switching Loss vs. IC
Figure 11. Switching Time vs. IC
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4
60
NGTG25N120FL2WG
TYPICAL CHARACTERISTICS
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 25 A
5
4
td(off)
EON
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
6
3
2
EOFF
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 25 A
1
0
10
5
15
25
35
45
55
65
75
85
5
45
55
65
75
Rg, GATE RESISTOR (W)
Figure 13. Switching Time vs. Rg
1000
VGE = 15 V
TJ = 150°C
IC = 25 A
Rg = 10 W
EON
2
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
35
Rg, GATE RESISTOR (W)
EOFF
1
0
VGE = 15 V
TJ = 150°C
IC = 25 A
Rg = 10 W
85
tf
td(off)
100
td(on)
tr
10
350 400 450
500
550
600
650
700
750
350 400
800
450
500
550
600
650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Loss vs. VCE
Figure 15. Switching Time vs. VCE
1000
1000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
25
Figure 12. Switching Loss vs. Rg
4
3
15
100
10
dc operation
50 ms
100 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
100
1 ms
1000
100
10
VGE = 15 V, TC = 125°C
1
10k
1
10
100
1000
10k
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
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NGTG25N120FL2WG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
50% Duty Cycle
RqJC = 0.39
0.1 20%
10%
5%
R1
Junction
R2
Rn
Case
2%
0.01
C1
0.001
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
0.000001
Cn
C2
0.00001
0.001
0.0001
0.01
Ri (°C/W)
Ci (J/°C)
0.003402
0.002017
0.000965
0.013782
0.000294
0.001568
0.010366
0.002294
0.001409
0.070949
0.048322 0.0065442
0.244018 0.4098053
0.1
1
ON−PULSE WIDTH (s)
Figure 18. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
120
100
Ipk (A)
80
TC = 80°C
60
TC = 110°C
40
20
0
0.01
0.1
1
Freq (kHz)
10
Figure 19. Collector Current vs. Switching Frequency
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6
100
1000
NGTG25N120FL2WG
Figure 20. Test Circuit for Switching Characteristics
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NGTG25N120FL2WG
Figure 21. Definition of Turn On Waveform
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8
NGTG25N120FL2WG
Figure 22. Definition of Turn Off Waveform
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NGTG25N120FL2WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
B A
P
A
NOTE 6
E2/2
Q
E2
NOTE 4
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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NGTG25N120FL2W/D