MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 DRAIN 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 1 2 THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM M6C M G G 1 M6C = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1. FR−5 = 1.0 0.75 0.062 in. ORDERING INFORMATION Device MMBFU310LT1G Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 February, 2011 − Rev. 5 1 Publication Order Number: MMBFU310LT1/D MMBFU310LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS −25 − Vdc Gate 1 Leakage Current − (VGS = −15 Vdc, VDS = 0) IG1SS − −150 pA Gate 2 Leakage Current − (VGS = −15 Vdc, VDS = 0, TA = 125°C) IG2SS − −150 nAdc VGS(off) −2.5 −6.0 Vdc IDSS 24 60 mAdc VGS(f) − 1.0 Vdc Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage − (IG = −1.0 mAdc, VDS = 0) Gate Source Cutoff Voltage − (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current − (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage − (IG = 10 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS |Yfs| 10 18 mmhos |yos| − 250 mmhos Input Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − 5.0 pF Reverse Transfer Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − 2.5 pF 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = -55°C 50 50 40 +25°C IDSS +25°C 40 30 20 10 -5.0 30 +150°C 20 +25°C -55°C 10 +150°C -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) Forward Transfer Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) 35 30 TA = -55°C VDS = 10 V f = 1.0 MHz +25°C 25 20 +150°C 15 +25°C -55°C 10 +150°C 5.0 0 5.0 4.0 3.0 2.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics vs Gate−Source Voltage Figure 2. Forward Transconductance vs Gate−Source Voltage http://onsemi.com 2 0 10 k 100 VGS(off) = -2.3 V = VGS(off) = -5.7 V = 1.0 k Yos 10 RDS CAPACITANCE (pF) Yfs Yfs 120 10 1.0 k 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 100 0.01 9.0 8.0 ID, DRAIN CURRENT (mA) 0 0 1.0 |S21|, |S11| |S12|, |S22| 0.85 0.45 0.060 1.00 2.4 0.79 0.39 1.8 Y21 1.2 0.048 0.98 6.0 VDS = 10 V ID = 10 mA TA = 25°C 0.73 0.33 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 200 300 500 f, FREQUENCY (MHz) 0.036 0.96 S11 Y22 700 0.55 0.15 100 1000 Figure 5. Common−Gate Y Parameter Magnitude vs Frequency q21, q11 180° 50° 200 300 500 f, FREQUENCY (MHz) q11, q12 -20° 120° q21, q22 86° -40° 100° 85° -60° 80° -120° 84° -80° 60° -100° 40° -120° 20° 100 -40° 0 q11 -20° q21 0.90 700 1000 Figure 6. Common−Gate S Parameter Magnitude vs Frequency q12, q22 -20° 87° q22 30° 2.0 3.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) Y11 12 160° 3.0 S21 18 40° 4.0 S22 VDS = 10 V ID = 10 mA TA = 25°C 170° 5.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 30 0 100 6.0 Figure 4. On Resistance and Junction Capacitance vs Gate−Source Voltage Figure 3. Common−Source Output Admittance and Forward Transconductance vs Drain Current 24 7.0 q21 q22 -20° -60° -80° -40° -100° 150° 20° q12 q11 140° 130° 10° 0° 100 -140° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) -60° q12 -160° 83° -180° 700 q21 -200° 82° 1000 Figure 7. Common−Gate Y Parameter Phase−Angle vs Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 700 -80° -100° 1000 Figure 8. S Parameter Phase−Angle vs Frequency http://onsemi.com 3 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (μ mhos) Yfs , FORWARD TRANSCONDUCTANCE (μmhos) MMBFU310LT1G MMBFU310LT1G PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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