NVMFS5C426N Power MOSFET 40 V, 1.3 mW, 235 A, Single N−Channel Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C426NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 1.3 mW @ 10 V 235 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 40 V VGS ±20 V ID 235 A TC = 100°C TC = 25°C Steady State PD ID W 128 N−CHANNEL MOSFET A 41 PD 1.9 D 1 900 TJ, Tstg −55 to + 175 °C IS 122 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 19 A) EAS 739 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) MARKING DIAGRAM W 3.8 IDM Operating Junction and Storage Temperature S (1,2,3) 29 TA = 100°C TA = 25°C, tp = 10 ms G (4) 64 TA = 100°C TA = 25°C D (5,6) 166 TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Symbol A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 5C426N XXXXXX = (NVMFS5C426N) or XXXXXX = 426NWF XXXXXX = (NVMFS5C426NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 0 1 Publication Order Number: NVMFS5C426N/D NVMFS5C426N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 9.6 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 3.5 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.5 −8.6 VGS = 10 V gFS ID = 50 A VDS =15 V, ID = 50 A 1.1 mV/°C 1.3 145 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 4300 VGS = 0 V, f = 1 MHz, VDS = 25 V 2100 pF 59 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS VGS = 10 V, VDS = 20 V; ID = 50 A 65 13 nC 20 VGS = 10 V, VDS = 20 V; ID = 50 A Gate−to−Drain Charge QGD 12 Plateau Voltage VGP 4.7 td(ON) 15 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 47 ns 36 9.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.68 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 63 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 34 ns 29 92 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C426N 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0.0 10 V to 6.0 V ID, DRAIN CURRENT (A) 5.2 V 4.8 V 4.4 V 4.0 V 0.5 1.0 1.5 2.0 2.5 VDS = 10 V TJ = 25°C TJ = 125°C 0 3.0 4 3.5 3 2.5 2 1.5 1 0.5 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4 6 5 7 2.2 TJ = 25°C 2.0 1.8 1.6 1.4 1.2 VGS = 10 V 1.0 0.8 0.6 0 20 40 60 100 120 140 160 180 200 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.E−03 1.8 IDSS, LEAKAGE (A) VGS = 10 V ID = 50 A 1.4 1.2 1.0 1.E−04 TJ = 150°C 1.E−05 TJ = 125°C 1.E−06 0.8 0.6 −50 3 Figure 2. Transfer Characteristics 4.5 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2 Figure 1. On−Region Characteristics TJ = 25°C ID = 50 A 1.6 1 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 5 0 3.0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS TJ = 85°C 1.E−07 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C426N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 C, CAPACITANCE (pF) CISS COSS 1000 CRSS 100 VGS = 0 V TJ = 25°C f = 1 MHz 10 5 0 15 10 20 25 30 35 40 10 QT 9 8 7 6 QGD QGS 5 4 3 VDS = 20 V ID = 50 A TJ = 25°C 2 1 0 10 0 20 30 40 60 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 1000 IS, SOURCE CURRENT (A) VGS = 0 V t, TIME (ns) 100 tr td(off) td(on) 10 VGS = 10 V VDD = 20 V ID = 50 A tf 1.0 1 10 TJ = 150°C TJ = 125°C 1.0 0.3 100 0.4 0.5 0.6 TJ = 25°C TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 10 ms 100 TJ = 25°C IPEAK, (A) ID, DRAIN CURRENT (A) 10 10 1 TC = 25°C VGS ≤ 10 V Single Pulse 0.1 0.1 0.5 ms 1 ms TJ = 100°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 10 1 1E−4 100 1E−3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E−2 NVMFS5C426N TYPICAL CHARACTERISTICS 100 RqJA (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C426NT1G 5C426N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C426NWFT1G 426NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C426NT3G 5C426N DFN5 (Pb−Free) 5000 / Tape & Reel NVMFS5C426NWFT3G 426NWF DFN5 (Pb−Free, Wettable Flanks) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS5C426N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* DETAIL A 2X 0.10 b C A B 0.05 c 0.495 8X 4.560 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 1.530 e/2 e L 1 4 3.200 K 4.530 E2 PIN 5 (EXPOSED PAD) L1 M 1.330 2X 0.905 1 G 0.965 D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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