NTNS3A91PZ Advance Information Small Signal MOSFET −20 V, −214 mA, Single P−Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package Features • • • • • http://onsemi.com Single P−Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.5 V Gate Voltage Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MOSFET RDS(on) MAX V(BR)DSS 1.6 W @ −4.5 V 2.4 W @ −2.5 V −20 V 4.5 W @ −1.5 V Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products P−Channel MOSFET D (3) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS −20 V Gate-to-Source Voltage VGS ±8.0 V ID −214 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −155 t≤5s TA = 25°C −277 Steady State TA = 25°C t≤5s TA = 25°C Pulsed Drain Current PD G (1) S (2) MARKING DIAGRAM 3 XLLGA3 CASE 713AA 2 mW 125 −214 mA 3.3 W @ −1.8 V Applications • • • • ID MAX 208 1 1 XM X = Specific Device Code M = Date Code IDM −643 mA TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −208 mA Device Package Shipping† Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C NTNS3A91PZT5G XLLGA3 (Pb−Free) 8000 / Tape & Reel tp = 10 ms Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient – Steady State (Note 1) RθJA 1000 °C/W Junction-to-Ambient – t ≤ 5 s (Note 1) RθJA 600 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. P2 1 Publication Order Number: NTNS3A91PZ/D NTNS3A91PZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Test Condition Min VGS = 0 V, ID = −250 mA −20 Typ Max Units −1.0 mA ±2.0 mA OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS = 0 V, VDS = −20 V V TJ = 25°C VDS = 0 V, VGS = ±8.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −1.0 V Drain-to-Source On Resistance RDS(on) VGS = −4.5 V, ID = −100 mA 1.3 1.6 W VGS = −2.5 V, ID = −50 mA 1.8 2.4 VGS = −1.8 V, ID = −20 mA 2.3 3.3 VGS = −1.5 V, ID = −10 mA 2.8 4.5 VGS = 0 V, IS = −10 mA −0.7 −1.0 Source−Drain Diode Voltage VSD −0.4 V CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS pF 22 VGS = 0 V, f = 1 MHz, VDS = −15 V 4.5 2.5 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time 97 VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2 W td(OFF) Fall Time ns 41 571 tf 286 3. Switching characteristics are independent of operating junction temperatures. RDS(on), NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W) 1.6 1.5 VGS = −4.5 V ID = −100 mA 1.4 1.3 1.2 VGS = −1.8 V ID = −20 mA 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 −VGS(th), GATE−TO−SOURCE THRESHOLD VOLTAGE (V) TYPICAL CHARACTERISTICS 150 0.85 0.75 ID = −250 mA 0.65 0.55 045 0.35 −50 TJ, JUNCTION TEMPERATURE (°C) −25 0 25 50 75 100 TJ, TEMPERATURE JUNCTION (°C) Figure 1. On Resistance Variation with Temperature Figure 2. Threshold Voltage http://onsemi.com 2 125 150 NTNS3A91PZ PACKAGE DIMENSIONS XLLGA3, 0.62x0.62, 0.35P CASE 713AA ISSUE O A B D PIN ONE REFERENCE 0.10 C É É NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. E DIM A A1 b b2 D E E2 E3 e K L L2 0.10 C TOP VIEW 0.10 C A 0.10 C A1 C SIDE VIEW RECOMMENDED SOLDER FOOTPRINT* 0.10 M C A B 0.05 M C b2 L2 SEATING PLANE MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.100 0.200 0.400 0.600 0.620 BSC 0.620 BSC 0.175 BSC 0.205 BSC 0.350 BSC 0.200 REF 0.090 0.210 0.110 0.310 0.35 PITCH 2X E2 3 0.20 2X 2 E3 1 0.185 0.595 K 2X 2 L 1 2X e e/2 b 0.10 M C A B 0.05 M C 3 0.55 0.245 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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